MTE014N15RE3 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTE014N15RE3
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总8页 (文件大小：571K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

MTE014N15RE3

BVDSS

ID@VGS=10V, TC=25°C

150V

120A

RDS(ON)@VGS=10V, ID=50A

15mΩ (typ)

Features

 Low Gate Charge

 Simple Drive Requirement

 Fast Switching Characteristic

 Pb-free lead plating and RoHS compliant package

Symbol

Outline

TO-220

MTE014N15RE3

G：Gate

D：Drain

S：Source

G D S

Ordering Information

Device

Package

Shipping

50 pcs/tube, 20 tubes/box, 4 boxes / carton

TO-220

(Pb-free lead plating package)

MTE014N15RE3-0-UB-X

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (TC=25C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

150

±20

120

480

Continuous Drain Current @VGS=10V, TC=25C

Continuous Drain Current @VGS=10V, TC=100C

Pulsed Drain Current

(Note 1)

IDM

IAS

Avalanche Current @L=0.1mH

Avalanche Energy @ L=5mH, ID=20A, VDD=25V (Note 2)

Repetitive Avalanche Energy@ L=0.05mH

Total Power Dissipation (TC=25℃)

EAS

EAR

1000

37.5

375

Total Power Dissipation (TC=100℃)

Total Power Dissipation (TA=25℃)

187

2.4

Total Power Dissipation (TA=100℃)

1.2

Operating Junction and Storage Temperature

Tj, Tstg

-55~+175

C

Note : 1. Pulse width limited by maximum junction temperature

2. 100% tested by conditions of L=0.1mH, IAS=12A, VGS=10V, VDD=25V

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Symbol

RθJC

RθJA

Value

0.4

62.5

Unit

C/W

Characteristics (TC=25C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

150

0.1

28.2

4.0

100

V/C

V_GS=0V, I_D=250μA

2.0

Reference to 25C, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=20A

G_FS

I_GSS

V_GS= 20V, V_DS=0V

V_DS=120V, V_GS=0V

V_DS=100V, V_GS=0V, Tj=125C

V_GS=10V, I_D=50A

I_DSS

μA

*R_DS(ON)

Dynamic

*Qg

19.5

62.8

17.2

15.9

*Qgs

*Qgd

I_D=20A, V_DS=75V, V_GS=10V

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

V_DS=75V, I_D=20A, V_GS=10V,

R_G=1

65.4

13.4

3798

240

V_GS=0V, V_DS=75V, f=1MHz

f=1MHz

1.5

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

120

480

1.2

0.78

212

I_S=10A, V_GS=0V

I_F=10A, V_GS=0V, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width 300μs, Duty Cycle2%

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Junction Temperature

Typical Output Characteristics

1.4

1.2

200

180

160

140

120

100

10V

0.8

0.6

0.4

ID=250μA,

VGS=0V

VGS=4V

4.5V

-75 -50 -25

25 50 75 100 125 150 175 200

Tj, Junction Temperature(°C)

VDS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

VGS=10V

0.8

0.6

0.4

0.2

Tj=25°C

Tj=150°C

0.1

100

10 12 14 16 18 20

ID, Drain Current(A)

IDR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

VGS=10V, ID=50A

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

100

2.8

2.4

ID=50A

1.6

1.2

0.8

0.4

RDS(ON)@Tj=25°C : 15mΩ typ.

-75 -50 -25

0 25 50 75 100 125 150 175 200

Tj, Junction Temperature(°C)

VGS, Gate-Source Voltage(V)

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

1000

100

ID=1mA

0.8

0.6

0.4

0.2

Coss

Crss

ID=250μA

-75 -50 -25

25 50 75 100 125 150 175 200

VDS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

VDS=10V

Gate Charge Characteristics

100

VDS=30V, 75V, 120V

from left to right

VDS=15V

0.1

0.01

Pulsed

Ta=25°C

ID=20A

14 21 28 35 42 49 56 63 70

Total Gate Charge---Qg(nC)

0.001

0.01

0.1

100

ID, Drain Current(A)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

150

120

1000

100

RDS(ON)

10μs

Limited

100μs

1ms

10ms

100ms

TC=25°C, Tj=175°C,

VGS=10V,RθJC=0.4°C/W

single pulse

VGS=10V, RθJC=0.4°C/W

0.1

100 125 150 175 200

0.1

100

1000

VDS, Drain-Source Voltage(V)

TC, Case Temperature(°C)

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Single Pulse Maximum Power Dissipation

Typical Transfer Characteristics

5000

4500

4000

3500

3000

2500

2000

1500

1000

500

200

180

160

140

120

100

VDS=10V

TJ(MAX)=175°C

TC=25°C

RθJC=0.4°C/W

0.0001

0.001

0.01 0.1

Pulse Width(s)

VGS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

1.RθJC(t)=r(t)*RθJC

2.Duty Factor, D=t1/t2

3.TJM-TC=PDM*RθJC(t)

4.RθJC=0.4 °C/W

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.01

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t1, Square Wave Pulse Duration(s)

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(TP)

Time within 5C of actual peak

temperature(tp)

240 +0/-5 C

260 +0/-5 C

10-30 seconds

20-40 seconds

Ramp down rate

6C/second max.

6 minutes max.

8 minutes max.

Time 25 C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTE014N15RE3

CYStek Product Specification

Spec. No. : C024E3

Issued Date : 2018.07.30

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

TO-220 Dimension

Marking:

E014

N15R

□□□□

Device Name

Date Code

1 2 3

3-Lead TO-220 Plastic Package

Style: Pin 1.Gate 2.Drain 3.Source

4.Drain

CYStek Package Code: E3

*: Typical

Millimeters

Inches

Min.

Millimeters

Min. Max.

2.540*

4.980

2.650

7.900

0.000

Inches

DIM

Min.

Max.

4.600

2.550

0.910

1.370

0.650

1.400

10.250

9.750

Max.

0.181

0.100

0.036

0.054

0.026

0.055

0.404

0.384

Min.

Max.

4.400

2.250

0.710

1.170

0.330

1.200

9.910

8.950

0.173

0.089

0.028

0.046

0.013

0.047

0.390

0.352

0.100*

5.180

2.950

8.100

0.300

0.196

0.104

0.311

0.000

0.508

0.112

0.204

0.116

0.319

0.012

0.528

0.128

12.900 13.400

2.850

3.250

7.500 REF

0.295 REF

12.950

0.510

12.650

0.498

3.600

3.800

0.142

0.150

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

 Lead: Pure tin plated.

 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

 CYStek reserves the right to make changes to its products without notice.

 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTE014N15RE3

CYStek Product Specification

相关型号：