MTE016N15E3-0-UB-X [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTE016N15E3-0-UB-X
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总8页 (文件大小：395K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 1/8

N-Channel Enhancement Mode Power MOSFET

MTE016N15E3

BVDSS

150V

65A

ID@VGS=10V, TC=25°C

RDS(ON)@VGS=10V, ID=20A

Features

• Low Gate Charge

16.6mΩ (typ)

• Simple Drive Requirement

• Repetitive Avalanche Rated

• Fast Switching Characteristic

• Pb-free lead plating and RoHS compliant package

Symbol

Outline

TO-220

MTE016N15E3

G：Gate

D：Drain

S：Source

G D S

Ordering Information

Device

Package

Shipping

50 pcs/tube, 20 tubes/box, 4 boxes / carton

TO-220

(Pb-free lead plating package)

MTE016N15E3-0-UB-X

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 2/8

Absolute Maximum Ratings (TC=25°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

150

±30

260

Continuous Drain Current @VGS=10V, TC=25°C

Continuous Drain Current @VGS=10V, TC=100°C

Pulsed Drain Current

(Note 1)

IDM

IAS

Avalanche Current

Avalanche Energy @ L=2mH, ID=30A, RG=25Ω (Note 2)

Repetitive Avalanche Energy@ L=0.05mH

Total Power Dissipation (TC=25℃)

EAS

EAR

900

214

107

Total Power Dissipation (TC=100℃)

Operating Junction and Storage Temperature

Tj, Tstg

-55~+175

°C

Note : 1. Pulse width limited by maximum junction temperature

2. 100% tested by conditions of L=2mH, I^AS=18A, VGS=10V, VDD=25V

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Symbol

RθJC

RθJA

Value

0.7

Unit

°C/W

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

150

0.1

4.0

100

V/°C

V_GS=0V, I_D=250μA

2.0

Reference to 25°C, I_D=1mA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=20A

G_FS

I_GSS

V_GS= 30V

V_DS=120V, V_GS=0V

V_DS=100V, V_GS=0V, Tj=125°C

V_GS=10V, I_D=20A

I_DSS

μA

*R_DS(ON)

Dynamic

*Qg

16.6

I_D=60A, V_DS=75V, V_GS=10V

V_DS=75V, I_D=60A, V_GS=10V,

*Qgs

*Qgd

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

31.4

67.6

20.2

4009

387

155

R_G=2.5

V_GS=0V, V_DS=25V, f=1MHz

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 3/8

3.1

f=1MHz

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

260

1.2

0.76

67.5

224

I_S=12A, V_GS=0V

I_F=50A, V_GS=0V, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 4/8

Typical Characteristics

Brekdown Voltage vs Junction Temperature

Typical Output Characteristics

1.4

1.2

100

10V,9V,8V,7V

5.5

0.8

0.6

0.4

I_D=250μA,

V_GS=0V

V_GS=4.5V

-75 -50 -25

25 50 75 100 125 150 175 200

_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

0.8

0.6

0.4

0.2

Tj=25°C

V_GS=6V

V_GS=7V

V_GS=10V

Tj=150°C

0.1

100

I_D, Drain Current(A)

I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

100

2.8

2.4

V_GS=10V, I_D=20A

I_D=20A

1.6

1.2

0.8

0.4

R_DS(ON)@Tj=25°C : 16.6mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175 200

_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 5/8

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

I_D=1mA

0.8

0.6

0.4

0.2

1000

oss

I_D=250μA

Crss

100

-75 -50 -25

25 50 75 100 125 150 175 200

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Gate Charge Characteristics

V_DS=75V

Forward Transfer Admittance vs Drain Current

V_DS=10V

100

V_DS=30V

V_DS=15V

V_DS=120V

0.1

0.01

Pulsed

Ta=25°C

I_D=20A

100

0.001

0.01

0.1

100

I_D, Drain Current(A)

Total Gate Charge---Qg(nC)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

1000

100

R_DS(ON)

Limited

10 s

100μs

1ms

10ms

100ms

T_C=25°C, Tj=175°C,

V_GS=10V,R =0.7°C/W

V_GS=10V, R =0.7°C/W

single pulse

0.1

100

125

150 175

200

0.1

_DS, Drain-Source Voltage(V)

100

1000

T_C, Case Temperature(°C)

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 6/8

Typical Characteristics(Cont.)

Single Pulse Maximum Power Dissipation

Typical Transfer Characteristics

5000

4500

4000

3500

3000

2500

2000

1500

1000

500

100

V_DS=10V

T_J(MAX)=175°C

T_C=25°C

_JC=0.7°C/W

0.0001

0.001

0.01 0.1

Pulse Width(s)

_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

1.R_θ_JC(t)=r(t)*R

2.Duty Factor, D=t¹/t²

3.T^JM-T^C=P^DM*R_θ^JC(t)

0.2

4.R =0.7 °C/W

0.1

0.05

0.02

0.01

Single Pulse

0.01

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t₁, Square Wave Pulse Duration(s)

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 7/8

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (t^L)

183°C

60-150 seconds

217°C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 °C

260 +0/-5 °C

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTE016N15E3

CYStek Product Specification

Spec. No. : C434E3

Issued Date : 2016.05.16

Revised Date :

CYStech Electronics Corp.

Page No. : 8/8

TO-220 Dimension

Marking:

E016

N15

□□□□

Device

Name

Date

Code

1 2 3

3-Lead TO-220 Plastic Package

Style: Pin 1.Gate 2.Drain 3.Source

4.Drain

CYStek Package Code: E3

*: Typical

Millimeters

Inches

Min.

Millimeters

Inches

DIM

Min.

4.470

2.520

0.710

1.170

0.310

1.170

10.010

8.500

Max.

4.670

2.820

0.910

1.370

0.530

1.370

10.310

8.900

Max.

0.184

0.111

0.036

0.054

0.021

0.054

0.406

0.350

Min.

Max.

Min.

Max.

12.460

0.176

0.099

0.028

0.046

0.012

0.046

0.394

0.335

12.060

0.475

0.491

2.540*

0.100*

4.980

2.590

0.000

5.180

2.890

0.300

0.196

0.102

0.000

0.528

0.140

0.147

0.204

0.114

0.012

0.543

0.156

0.155

13.400 13.800

3.560

3.735

3.960

3.935

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTE016N15E3

CYStek Product Specification

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