MTE050N15ARFP-0-UB-X [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTE050N15ARFP-0-UB-X
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总8页 (文件大小：441K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 8

N-Channel Enhancement Mode Power MOSFET

MTE050N15ARFP

BV^DSS

ID@TC=25°C, VGS=10V

150V

16A

3.9A

48.6 mΩ(typ)

ID@TA=25°C, VGS=10V

RDS(ON)@VGS=10V, ID=15A

Features

RDS(ON)@VGS=6V, ID=10A

55.0 mΩ(typ)

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• Insulating package, front/back side insulating voltage=2500V(AC)

• RoHS compliant package

Symbol

Outline

MTE050N15ARFP

TO-220FP

G：Gate D：Drain S：Source

G D S

Ordering Information

Device

Package

Shipping

50 pcs/tube, 20 tubes/box, 4 boxes / carton

TO-220FP

(Pb-free lead plating package)

MTE050N15ARFP-0-UB-X

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 2/ 8

Absolute Maximum Ratings (TC=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage (Note 1)

Gate-Source Voltage

VDS

VGS

150

±20

16*

10.1*

3.9

3.1

64*

Continuous Drain Current @TC=25°C, VGS=10V

Continuous Drain Current @TC=100°C, VGS=10V

Continuous Drain Current @TA=25°C, VGS=10V

Continuous Drain Current @TA=70°C, VGS=10V

Pulsed Drain Current @ VGS=10V

Single Pulse Avalanche Current @L=0.1mH

Single Pulse Avalanche Energy @ L=1mH, ID=16 Amps,

V^DD=50V

(Note 1)

(Note 2)

(Note 3)

I^D

IDSM

IDM

IAS

EAS

EAR

128

(Note 4)

(Note 3)

(Note 1)

(Note 2)

Repetitive Avalanche Energy

13.2

TC=25°C

TC=100°C

TA=25°C

TA=70°C

Power Dissipation

PDSM

1.3

Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)

from case for 10 seconds

Maximum Temperature for Soldering @ Package Body for 10

seconds

T^L

300

260

°C

TPKG

Operating Junction and Storage Temperature

Tj, Tstg -55~+150

*Drain current limited by maximum junction temperature

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max (Note 2)

Symbol

RθJC

RθJA

Value

3.8

62.5

Unit

°C/W

Note : 1 The power dissipation P_Dis based on T_J(MAX)=150 C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2 The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment

with T_A=25 C. The power dissipation P_DSMis based on R_θJAand the maximum allowed junction temperature of

150°C. The value in any given application depends on the user’s specific board design.

3 Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150 C. Ratings are based on low frequency

and low duty cycles to keep initial TJ=25°C.

4. 100% tested by conditions of L=0.1mH, I^AS=10A, VGS=10V, VDD=50V

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 3/ 8

Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

150

0.13

10.2

100

V/°C

V_GS=0V, I_D=250μA

Reference to 25°C, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=10A

*G_FS

I_GSS

V_GS= 20V, V_DS=0V

V_DS=120V, V_GS=0V

I_DSS

μA

_DS=120V, V_GS=0V, Tj=125°C

V_GS=10V, I_D=15A

_GS=6V, I_D=10A

48.6

55.4

*R_DS(ON)

Dynamic

*Qg

23.5

6.4

15.8

16.6

28.8

7.6

1349

103

I_D=15A, V_DS=120V, V_GS=10V

*Qgs

*Qgd

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

V_DD=75V, I_D=10A, V_GS=10V, R_G=3

V_GS=0V, V_DS=80V, f=1MHz

f=1MHz

0.9

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

1.2

0.79

143

I_S=3A, V_GS=0V

V_GS=0V, I_F=10A, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 4/ 8

Typical Characteristics

Brekdown Voltage vs Junction Temperature

Typical Output Characteristics

1.4

1.2

10V

0.8

0.6

0.4

4. V

I_D=250μA,

V_GS=0V

V_GS=4V

-75 -50 -25

25 50 75 100 125 150 175

_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

V_GS=4.5V

Reverse Drain Current vs Source-Drain Voltage

100

1.2

0.8

0.6

0.4

0.2

Tj=25°C

V_GS=5.5V

10V

Tj=150°C

0.1

100

10 12 14 16 18 20

I_D, Drain Current(A)

I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

150

2.4

V_GS=10V, I_D=15A

I_D=15A

120

1.6

1.2

0.8

0.4

R_DS(ON)@Tj=25°C : 48.6mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 5/ 8

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

I_D=1mA

1000

100

0.8

0.6

0.4

0.2

oss

I_D=250μA

Crss

-75 -50 -25

25 50 75 100 125 150 175

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

V_DS=10V

Gate Charge Characteristics

100

V_DS=75V

V_DS=30V

V_DS=120V

V_DS=15V

0.1

Pulsed

Ta=25°C

I_D=15A

0.01

10 12 14 16 18 20 22 24

0.001

0.01

0.1

100

I_D, Drain Current(A)

Total Gate Charge---Qg(nC)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

100

10 s

R_DS(ON)

Limited

100μs

1ms

10ms

T_C=25°C, Tj=150°C,

100ms

_GS=10V,R =3.8°C/W

V_GS=10V, R =3.8°C/W

single pulse

0.1

100

125

150

175

0.1

V_DS, Drain-Source Voltage(V)

100

1000

T_C, Case Temperature(°C)

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 6/ 8

Typical Characteristics(Cont.)

Single Pulse Maximum Power Dissipation

Typical Transfer Characteristics

3000

2500

2000

1500

1000

500

V_DS=10V

T_J(MAX)=150°C

T_C=25°C

_JC=3.8°C/W

0.0001

0.001

0.01 0.1

Pulse Width(s)

V_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.R_θJC(t)=r(t)*R

2.Duty Factor, D=t /t

0.05

3.T -T =P *R_θ(t)

4.R =3.8 °C/W

0.02

0.01

Single Pulse

0.001

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t₁, Square Wave Pulse Duration(s)

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 7/ 8

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTE050N15ARFP

CYStek Product Specification

Spec. No. : C035FP

Issued Date : 2017.11.16

Revised Date :

CYStech Electronics Corp.

Page No. : 8/ 8

TO-220FP Dimension

Marking:

E050N

15AR

Device Name

Date Code

3-Lead TO-220FP Plastic Package

CYStek Package Code: FP

Style: Pin 1.Gate 2.Drain 3.Source

*Typical

Millimeters

Inches

Millimeters

Inches

DIM

Min.

Max.

Min.

4.35

Max.

4.65

Min.

0.246

Max.

0.258

Min.

6.25

Max.

6.55

0.171

0.183

0.051 REF

1.300 REF

0.138 REF

0.055 REF

0.256 0.272

3.50 REF

1.40 REF

6.50 6.90

0.112

0.102

0.020

0.031

0.124

0.110

0.030

0.041

2.85

2.60

0.50

0.80

3.15

2.80

0.75

1.05

0.031 REF

0.020

0.80 REF

0.50 REF

0.047 REF

1.20 REF

1.102

0.043

0.036

1.118

0.051

0.043

28.00

1.10

0.92

28.40

1.30

1.08

0.020

0.396

0.583

0.030

0.404

0.598

0.500

10.06

14.80

0.750

10.26

15.20

0.067 REF

0.012 REF

1.70 REF

0.30 REF

0.100 *

0.106 REF

2.54*

2.70 REF

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTE050N15ARFP

CYStek Product Specification

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