MTE050N15BRQ8 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE050N15BRQ8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：691K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE050N15BRQ8
BVDSS
150V
4.9A
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4.5A
48 mΩ(typ)
Features
Simple drive requirement
Low on-resistance
Fast switching characteristic
Pb-free & halogen-free package
Symbol
Outline
MTE050N15BRQ8
SOP-8
D
D
D
D
G
S
S
S
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
SOP-8
Shipping
2500 pcs / Tape & Reel
MTE050N15BRQ8-0-T3-G
(RoHS compliant & Halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
150
±20
6.2
3.9
4.9
3.9
20 *1
32
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
ID
A
IDM
IAS
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
EAS
EAR
128 *3
mJ
1.6
3.1
2.0
*2
TA=25 C
Total Power Dissipation
PD
W
TA=70 C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
C
.
Note : *1 Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Symbol
RθJC
RθJA
°
Value
25
40
Unit
C/W
2
Note : 40°C / W when mounted on a 1 in pad of 2 oz copper, t≤10s; 125 C/W when mounted on minimum pad.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
150
-
-
7.5
-
-
-
-
4
-
100
1
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=5A
V
2
-
-
-
-
-
S
nA
±
±
IGSS
VGS= 20V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=85C
VGS =10V, ID=4.5A
IDSS
μA
10
65
Ω
m
*RDS(ON)
48
Dynamic
Qg
Qgs
Qgd
-
-
-
-
-
-
20.1
5.3
4.7
1224
105
16
30
-
-
1836
158
32
*1, 2
*1, 2
*1, 2
nC
VDS=75V, ID=2A, VGS=10V
VDS=75V, VGS=0V, f=1MHz
Ciss
Coss
Crss
pF
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Characteristics (Cont. TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Dynamic
td(ON) *1, 2
-
-
-
-
-
15.4
17.6
35.4
9.4
23
26
53
14
-
tr
*1, 2
ns
Ω
A
VDS=75V, ID=1A, VGS=10V, RG=6Ω
td(OFF) *1, 2
tf
*1, 2
f=1MHz
Rg
1
Source-Drain Diode Ratings and Characteristics
IS
-
-
-
-
-
-
4.2
20
1.2
-
*1
ISM *3
VSD *1
trr
-
0.77
37.8
58.8
V
ns
nC
IS=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
20
10V,9V,8V,7V,6V
18
16
14
12
10
8
5V
4.5V
0.8
0.6
0.4
6
ID=250μA,
VGS=0V
VGS=4V
4
2
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VGS=6V
1.0
0.8
0.6
0.4
0.2
Tj=25°C
VGS=10V
Tj=150°C
10
0
2
4
6
8
10
0.01
0.1
1
10
100
IDR, Reverse Drain Current(A)
ID, Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2.4
VGS=10V, ID=4.5A
180
160
140
120
100
80
2.0
1.6
1.2
0.8
0.4
0.0
RDS(ON)@Tj=25°C : 48mΩ typ.
ID=4.5A
60
40
20
0
-75 -50 -25
0
Tj, Junction Temperature(°C)
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
1000
ID=1mA
Coss
100
ID=250μA
Crss
f=1MHz
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=30V, 75V, 120V
from left to right
8
6
4
2
0
VDS=15V
1
0.1
0.01
Pulsed
Ta=25°C
ID=5A
0
2
4
6
8
10 12 14 16 18 20 22 24
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
6
5
4
3
2
1
0
100
10
RDS(ON)
Limited
100μs
1
1ms
10ms
100ms
1s
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.1
0.01
TA=25°C,RθJA=40°C/W,VGS=10V
DC
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
20
18
16
14
12
10
8
300
250
200
150
100
50
TJ(MAX)=150°C
VDS=10V
TA=25°C
RθJA=40°C/W
6
4
2
0
0
0
1
2
3
4
5
6
0.0001 0.001
0.01 0.1
Pulse Width(s)
1
10
100
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
10
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTE050N15BRQ8
CYStek Product Specification
Spec. No. : C033Q8
Issued Date : 2018.08.02
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOP-8 Dimension
Marking:
E050N
Device Name
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
DIM
Inches
Min.
Millimeters
Min. Max.
1.270 (BSC)
Inches
Min. Max.
0.050 (BSC)
DIM
Min.
1.35
0.10
0.38
0.19
4.80
3.80
Max.
Max.
0.069
0.010
0.020
0.010
0.197
0.157
A
A(1)
B
1.75
0.25
0.51
0.25
5.00
4.00
0.053
0.004
0.015
0.007
0.189
0.150
e
H
L
α
h
5.80
0.50
0
6.20
0.93
8°
0.228
0.020
0
0.244
0.037
8°
C
D
E
0.25
0.50
0.010
0.020
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE050N15BRQ8
CYStek Product Specification
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