MTE050N15BRV8 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTE050N15BRV8
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：475K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

MTE050N15BRV8

BV^DSS

150V

12.4A

4.3A

ID @ TC=25°C, VGS=10V

ID @ TA=25°C, VGS=10V

49.1mΩ

58.5mΩ

VGS=10V, ID=3.4A

Features

RDSON(TYP)

VGS=6V, ID=3.3A

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

DFN3×3

MTE050N15BRV8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

DFN3×3

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

MTE050N15BRV8-0-T6-G

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)

Parameter

Symbol

VDS

Limits

150

±20

12.4

7.8

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

Continuous Drain Current @ VGS=10V, TC=25°C

Continuous Drain Current @ VGS=10V, TC=100°C

Continuous Drain Current @ VGS=10V, TA=25°C

Continuous Drain Current @ VGS=10V, TA=70°C

Pulsed Drain Current

I^D

4.3

I^DSM

3.4

IDM

IAS

50 *1

Avalanche Current @ L=0.1mH

128

EAS

Avalanche Energy @ L=1mH, ID=16A, VDD=25V

TC=25℃

P^D

TC=100℃

Total Power Dissipation

8.4

TA=25℃

2.5 *2

1.6 *2

-55~+150

P^DSM

T^A=70℃

Operating Junction and Storage Temperature Range

Tj, Tstg

°C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Note : 1. Pulse width limited by maximum junction temperature.

Symbol

Value

50 *2

Unit

RθJC

°C/W

RθJA

2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice RθJA will be determined by customer’s PCB characteristics.

125°C/W when mounted on a minimum pad of 2 oz. copper.

3. 100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

V_GS(th)

G_FS

150

100

V_GS=0V, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=15V, I_D=3A

5.5

I_GSS

V_GS= 20V, V_DS=0V

V_DS=120V, V_GS=0V

V_DS=120V, V_GS=0V, Tj=55°C

V_GS=10V, I_D=3.4A

I_DSS

μA

49.1

58.5

R_{DS(ON) *1}

Dynamic

V_GS=6V, I_D=3.3A

Ciss

Coss

Crss

1206

7.3

20.1

5.3

4.7

1809

V_DS=80V, V_GS=0V, f=1MHz

VDS=75V, VGS=10V, ID=3.4A

*1, 2

Qgs

Qgd

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

Characteristics (TC=25°C, unless otherwise specified)

Symbol

t_{d(ON) *1, 2}

Min.

Typ.

15.4

17.2

35.6

8.8

Max.

Unit

Test Conditions

VDS=100V, ID=1A, VGS=10V,

*1, 2

t_{d(OFF) *1, 2}

RGS=6Ω

t_f

*1, 2

f=1MHz

Source-Drain Diode

I_S

V_{SD *1}

trr

1.2

0.78

44.3

71.7

IS=3.2A, VGS=0V

IF=3.2A, dIF/dt=100A/μs

Qrr

108

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

Recommended Soldering Footprint

unit : mm

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V

0.8

0.6

4.5V

I_D=250μA,

V_GS=0V

V_GS=4V

-75 -50 -25 0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

V_DS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

Tj=25°C

0.8

0.6

0.4

0.2

V_GS=6V

10V

Tj=150°C

10 12 14 16 18 20

0.1

100

I_D, Drain Current(A)

I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

2.4

200

V_GS=10V, I_D=3.4A

R_DSON@Tj=25°C : 49.1mΩ typ.

180

160

140

120

100

I_D=3.4A

1.6

1.2

0.8

0.4

-75 -50 -25

25 50 75 100 125 150 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

1.6

1.4

1.2

10000

Ciss

1000

I_D=1mA

oss

100

0.8

0.6

0.4

0.2

I =250 A

Crss

-75 -50 -25

25 50 75 100 125 150 175

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

V_DS=10V

Gate Charge Characteristics

100

V_DS=30V, 75V, 120V

from left to right

V_DS=15V

0.1

0.01

Pulsed

Ta=25°C

I_D=3.4A

0.001

0.01

0.1

100

I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

100

4.5

R_DS(ON)

Limited

3.5

100 s

2.5

1ms

10ms

1.5

100ms

0.1

0.01

T_A=25°C, Tj=150°C, V_GS=10V

RθJA=50°C/W, Single Pulse

T_A=25°C, V_GS=10V, R =50°C/W

θJA

0.5

Single Pulse

100

125

150

175

0.01

0.1

100

1000

_DS, Drain-Source Voltage(V)

Tj, Junctione Temperature(°C)

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

Typical Transfer Characteristics

300

250

200

150

100

V_DS=10V

T_J(MAX)=150°C

T_A=25°C

=50°C/W

θJA

0.0001 0.001

0.01

0.1

100

V_GS, Gate-Source Voltage(V)

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.Rθ (t)=r(t)*Rθ

0.1

2.Duty Factor, D=t /t

0.05

3.T -T =P *Rθ (t)

=50

4.Rθ

°C/W

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

Pin #1

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts ^minto ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

Time 25 °C to peak temperature

6°C/second max.

6 minutes max.

8 minutes max.

Note :1. All temperatures refer to topside of the package, measured on the package body surface.

2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care

should be taken to match the coefficients of thermal expansion between components and PCB. If they are

not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly

cools.

MTE050N15BRV8

CYStek Product Specification

Spec. No. : C033V8

Issued Date : 2017.10.05

Revised Date :

CYStech Electronics Corp.

Page No. : 9/9

DFN3×3 Dimension

Marking:

D D D D

E050N

15BR

Date

Code

8-Lead DFN3×3 Plastic Package

CYStek Package Code: V8

Millimeters

DIM

Inches

Min.

Millimeters

Inches

Min.

0.118

0.094

DIM

Min.

0.70

0.25

0.10

3.25

3.00

1.48

Max.

0.031

0.014

0.010

0.136

0.126

0.066

Min.

3.00

2.39

Max.

3.20

2.59

Max.

0.126

0.102

0.80

0.35

0.25

3.45

3.20

1.68

0.028

0.010

0.004

0.128

0.118

0.058

0.65 BSC

0.026 BSC

0.30

0.50

0.012

0.020

0.13 TYP

0.005 TYP

8°

12°

0.13 TYP

0.005 TYP

3.20

3.40

0.126

0.134

0.15

0.006

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTE050N15BRV8

CYStek Product Specification

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