MTE130N20J3-0-T3-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;型号: | MTE130N20J3-0-T3-G |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | N-Channel Enhancement Mode Power MOSFET |
文件: | 总9页 (文件大小:414K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
BVDSS
200V
18A
MTE130N20J3
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP) @ VGS=10V, ID=9A
1.9A
156mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
TO-252(DPAK)
MTE130N20J3
G
D S
G:Gate D:Drain S:Source
Ordering Information
Device
Package
TO-252
Shipping
2500 pcs / Tape & Reel
MTE130N20J3-0-T3-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
200
±20
18
13
30
1.9
1.5
3
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Avalanche Current
(Note 1)
(Note 1)
(Note 3)
(Note 4)
(Note 4)
(Note 3)
ID
IDM
IDSM
A
IAS
Avalanche Energy @ L=1mH, ID=3A, VDD=50V
(Note 3)
EAS
4.5
mJ
W
TC=25°C
TC=100°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
125
62.5
2
Power Dissipation
PD
TA=25°C
Power Dissipation
PDSM
W
TA=70°C
1.3
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 2)
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Value
1.2
62.5
90
Unit
°C/W
°C/W
°C/W
Rth,j-a
(Note 4)
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
∆BVDSS/∆Tj
VGS(th)
200
-
0.2
-
12
-
-
-
4.0
-
100
1
10
V
V/°C
V
S
nA
VGS=0V, ID=250μA
-
2.0
-
-
-
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=9A
GFS
IGSS
±
±
VGS= 20V
-
-
VDS =180V, VGS =0V
VDS =180V, VGS =0V, Tj=125°C
VGS =10V, ID=9A
IDSS
μA
-
-
Ω
m
*RDS(ON)
Dynamic
*Qg
156
195
-
-
-
-
-
-
-
-
-
-
19
5
7.2
12.6
35
27.6
14.6
813
85
-
-
-
-
-
-
-
-
-
-
nC
VDS=160V, ID=18A, VGS=10V
VDS=100V, ID=18A, VGS=10V, RG=6
VGS=0V, VDS=25V, f=1MHz
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Ω
ns
pF
36
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
18
30
1.2
-
A
0.86
80
245
V
ns
nC
IS=18A, VGS=0V
IF=18A, VGS=0, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
30
25
20
15
10
5
10V, 9V, 8V, 7V
VGS=6V
0.8
0.6
0.4
VGS=5V
μ
ID=250 A,
VGS=0V
VGS=4.5V
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
VGS=6V
VGS=10V
0.01
0.1
1
10
100
0
4
8
12
16
20
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=10V, ID=9A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
600
500
400
300
200
100
0
3
2.5
2
ID=9A
1.5
1
0.5
0
RDS(ON)@Tj=25°C :156mΩ typ
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
ID=1mA
Ciss
1000
C
oss
0.8
0.6
0.4
100
10
ID=250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175
0.1
1
10
DS, Drain-Source Voltage(V)
100
V
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=100V
VDS=40V
8
6
4
2
0
VDS=160V
1
VDS=10V
Pulsed
0.1
0.01
Ta=25°C
ID=18A
20
0
4
8
12
16
24
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
20
16
12
8
100
10
1
μs
100
RDS(ON)
Limit
1ms
10ms
100ms
DC
4
TC=25°C, Tj=175°, VGS=10V
θJC
JC
VGS=10V, Rθ =1.2°C/W
R
=1.2°C/W, Single Pulse
0
0.1
25
50
75
100
125
150 175
200
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
3000
2500
2000
1500
1000
500
30
25
20
15
10
5
VDS=10V
TJ(MAX)=175°C
TC=25°C
θ
JC=1.2°C/W
0
0
0
2
4
6
8
10
0.001
0.01
0.1
Pulse Width(s)
1
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
θ
θJC
1.R JC(t)=r(t)*R
2.Duty Factor, D=t /t
3.TJM-TC=PDM*RθJC(t)
0.1
0.1
1
2
0.05
θJC=1.2 C/W
4.R
°
0.02
0.01
0.01
Single Pulse
1.E-03
0.001
1.E-05
1.E-04
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
100°C
150°C
150°C
200°C
60-120 seconds
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE130N20J3
CYStek Product Specification
Spec. No. : C966J3
Issued Date : 2014.12.23
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
TO-252 Dimension
Marking:
4
Device
Name
E130
N20
Date
Code
□□□□
2
3
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Inches
Min.
Millimeters
Inches
Millimeters
DIM
DIM
Max.
0.094
0.005
0.048
0.034
0.034
0.023
0.023
0.264
0.215
0.244
Min.
Max.
2.400
0.127
1.210
0.860
0.860
0.580
0.580
6.700
5.460
6.200
Min.
0.086
0.172
Max.
0.094
0.188
Min.
2.186
4.372
Max.
2.386
4.772
A
A1
B
b
b1
C
C1
D
D1
E
0.087
0.000
0.039
0.026
0.026
0.018
0.018
0.256
0.201
0.236
2.200
0.000
0.990
0.660
0.660
0.460
0.460
6.500
5.100
6.000
e
e1
H
K
L
L1
L2
L3
P
0.163 REF
0.190 REF
0.386 0.409
0.114 REF
4.140 REF
4.830 REF
9.800 10.400
2.900 REF
0.055
0.024
0.067
0.039
1.400
0.600
1.700
1.000
0.026 REF
0.211 REF
0.650 REF
5.350 REF
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE130N20J3
CYStek Product Specification
相关型号:
MTE14
Board Connector, 14 Contact(s), 1 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking, Plug
ADAM-TECH
MTE15
Board Connector, 15 Contact(s), 1 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking, Plug
ADAM-TECH
MTE16
Board Connector, 16 Contact(s), 1 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking, Plug
ADAM-TECH
MTE17
Board Connector, 17 Contact(s), 1 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking, Plug
ADAM-TECH
MTE19
Board Connector, 19 Contact(s), 1 Row(s), Female, 0.1 inch Pitch, Crimp Terminal, Locking, Plug
ADAM-TECH
©2020 ICPDF网 联系我们和版权申明