MTE1D3N04F3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE1D3N04F3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：630K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE1D3N04F3
BVDSS
ID@VGS=10V, TC=25°C
40V
195A
25A
Features
IDSM@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=50A
1.4 mΩ(typ)
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Symbol
Outline
MTE1D3N04F3
TO-263
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
Package
TO-263
(Pb-free lead plating and RoHS compliant package)
Shipping
MTE1D3N04F3-0-T7-X
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
VGS
40
±20
V
250*
176.8*
195
Continuous Drain Current @TC=25C, VGS=10V (silicon limit) (Note 1)
Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25C, VGS=10V (package limit) (Note 1)
ID
25
20
1000*
140
A
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 2)
IDSM
(Note 2)
IDM
IAS
Avalanche Current @L=100μH
Single Pulse Avalanche Energy @ L=1mH, ID=60 Amps, VDD=35V
EAS
EAR
1800
(Note 4)
mJ
W
Repetitive Avalanche Energy
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
25
250
125
2.1
1.4
TC=25C
TC=100C
TA=25C
TA=70C
PD
Power Dissipation
PDSM
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TL
300
260
C
TPKG
Operating Junction and Storage Temperature
Tj, Tstg -55~+175
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
0.6
58
Unit
C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=1mH, IAS=34A, VGS=10V, VDD=35V.
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 9
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
*GFS
40
2
-
-
-
-
4
-
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
V
35.8
S
nA
±
±
IGSS
-
-
-
-
-
-
-
100
1
VGS= 20V, VDS=0V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125C
VGS =10V, ID=50A
IDSS
μA
25
2.1
Ω
m
*RDS(ON)
Dynamic
*Qg
1.4
-
-
-
-
-
-
-
-
-
-
-
174.1
39.2
54
40.2
25.2
118.2
40
8756
1108
666
-
-
-
-
-
-
-
-
-
-
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
nC
VDD=20V, ID=50A,VGS=10V
Ω
VDD=20V, ID=50A, VGS=10V, RG=1
ns
pF
VGS=0V, VDS=20V, f=1MHz
f=1MHz
Ω
2.5
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
208
758
1.2
-
A
0.79
33.2
29.6
V
ns
nC
IS=30A, VGS=0V
VGS=0V, IF=30A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
300
270
240
210
180
150
120
90
10V,9V,8V,7V,6V
5.5V
5V
0.8
0.6
0.4
ID=250μA,
VGS=0V
60
4.5V
30
VGS=4V
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
1
2
3
4
5
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10
1.2
VGS= 6V
7V
10V
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
1
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=10V, ID=50A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
2.8
2.4
2
9
8
7
6
5
4
3
2
1
0
ID=50A
1.6
1.2
0.8
0.4
0
RDS(ON)@Tj=25°C : 1.4mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
100000
1.4
1.2
1
Ciss
ID=1mA
10000
1000
100
0.8
0.6
0.4
0.2
Coss
ID=250μA
Crss
5
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=20V
VDS=30V
8
6
4
2
0
VDS=15V
1
0.1
0.01
Pulsed
Ta=25°C
ID=50A
0
20 40 60 80 100 120 140 160 180 200
Total Gate Charge---Qg(nC)
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
silicon limit
Maximum Safe Operating Area
300
250
200
150
100
50
10000
1000
100
10
RDS(ON)
Limited
10μs
100μs
1ms
package limit
10ms
100ms
DC
TC=25°C, Tj=175°C,
VGS=10V,RθJC=0.6°C/W
single pulse
1
VGS=10V, RθJC=0.6°C/W
0
0.1
25
50
75
100 125 150 175 200
0.1
1
10
100
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
300
270
240
210
180
150
120
90
VDS=10V
TJ(MAX)=175°C
TC=25°C
RθJC=0.6°C/W
60
30
0
0
0
1
2
3
4
5
6
7
8
9
10
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=0.6 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE1D3N04F3
CYStek Product Specification
Spec. No. : C151F3
Issued Date : 2018.12.17
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 9
TO-263 Dimension
Marking :
E1D3
N04
□□□□
Device Name
Date Code
Style : Pin 1.Gate 2.Drain
3.Source
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
Date Code : (From left to right)
First Code : Year code, the last digit of Christinr year. For example, 2014→4, 2015→, 2016→6, …, etc.
Second Code : Month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
Third and fourth codes : production serial number, 01~99
Millimeters
Min.
Inches
Millimeters
Inches
DIM
DIM
Max.
4.70
0.25
2.79
0.90
0.86
1.36
1.32
0.47
0.43
Min.
Max.
0.185
0.010
0.110
0.035
0.034
0.054
0.052
0.019
0.017
Min.
10.06
7.80
Max.
10.26
8.20
Min.
0.396
0.307
Max.
0.404
0.323
A
4.40
0.00
2.59
0.77
0.76
1.23
1.22
0.34
0.33
1.22
9.05
6.60
0.173
0.000
0.102
0.030
0.030
0.048
0.048
0.013
0.013
E
E1
e
A1
A2
b
2.54 BSC
0.100 BSC
H
14.70
2.00
1.17
-
15.50
2.60
1.40
1.75
0.579
0.610
0.102
0.055
0.069
b1
b2
b3
c
L
0.079
0.046
-
L1
L2
L3
L4
θ
0.25 BSC
2.00 REF
0.010 BSC
0.079 BSC
c1
c2
D
1.32
9.25
-
0.048
0.356
0.260
0.052
0.364
-
0
5
1
8
9
5
0
8
9
5
Θ1
Θ2
5
1
D1
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
Lead : Pure tin plated.
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE1D3N04F3
CYStek Product Specification
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