MTE1D3N04F3 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;
MTE1D3N04F3
型号: MTE1D3N04F3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

N-Channel Enhancement Mode Power MOSFET

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中文:  中文翻译
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Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/ 9  
N-Channel Enhancement Mode Power MOSFET  
MTE1D3N04F3  
BVDSS  
ID@VGS=10V, TC=25°C  
40V  
195A  
25A  
Features  
IDSM@VGS=10V, TA=25°C  
RDS(ON)@VGS=10V, ID=50A  
1.4 mΩ(typ)  
Low On Resistance  
Simple Drive Requirement  
Low Gate Charge  
Fast Switching Characteristic  
RoHS compliant package  
Symbol  
Outline  
MTE1D3N04F3  
TO-263  
G
D S  
GGate DDrain SSource  
Ordering Information  
Device  
Package  
TO-263  
(Pb-free lead plating and RoHS compliant package)  
Shipping  
MTE1D3N04F3-0-T7-X  
800 pcs / Tape & Reel  
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant  
and green compound products  
Packing spec, T7 : 800 pcs / tape & reel, 13reel  
Product rank, zero for no rank products  
Product name  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/ 9  
Absolute Maximum Ratings (TC=25C)  
Parameter  
Symbol  
Limits  
Unit  
Drain-Source Voltage (Note 1)  
Gate-Source Voltage  
VDS  
VGS  
40  
±20  
V
250*  
176.8*  
195  
Continuous Drain Current @TC=25C, VGS=10V (silicon limit) (Note 1)  
Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1)  
Continuous Drain Current @TC=25C, VGS=10V (package limit) (Note 1)  
ID  
25  
20  
1000*  
140  
A
Continuous Drain Current @TA=25C, VGS=10V  
Continuous Drain Current @TA=70C, VGS=10V  
Pulsed Drain Current @ VGS=10V  
(Note 2)  
IDSM  
(Note 2)  
IDM  
IAS  
Avalanche Current @L=100μH  
Single Pulse Avalanche Energy @ L=1mH, ID=60 Amps, VDD=35V  
EAS  
EAR  
1800  
(Note 4)  
mJ  
W
Repetitive Avalanche Energy  
(Note 3)  
(Note 1)  
(Note 1)  
(Note 2)  
(Note 2)  
25  
250  
125  
2.1  
1.4  
TC=25C  
TC=100C  
TA=25C  
TA=70C  
PD  
Power Dissipation  
PDSM  
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)  
from case for 10 seconds  
Maximum Temperature for Soldering @ Package Body for 10  
seconds  
TL  
300  
260  
C  
TPKG  
Operating Junction and Storage Temperature  
Tj, Tstg -55~+175  
*Drain current limited by maximum junction temperature  
Thermal Data  
Parameter  
Thermal Resistance, Junction-to-case, max  
Thermal Resistance, Junction-to-ambient, max (Note 2)  
Symbol  
RθJC  
RθJA  
Value  
0.6  
58  
Unit  
C/W  
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful  
in setting the upper dissipation limit for cases where additional heatsinking is used.  
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment  
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction  
temperature of 150°C. The value in any given application depends on the users specific board design, and the  
maximum temperature of 175°C may be used if the PCB allows it.  
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency  
and low duty cycles to keep initial TJ=25°C.  
4. 100% tested by conditions of L=1mH, IAS=34A, VGS=10V, VDD=35V.  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/ 9  
Characteristics (Tj=25C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Static  
BVDSS  
VGS(th)  
*GFS  
40  
2
-
-
-
-
4
-
VGS=0V, ID=250μA  
VDS = VGS, ID=250μA  
VDS =10V, ID=20A  
V
35.8  
S
nA  
±
±
IGSS  
-
-
-
-
-
-
-
100  
1
VGS= 20V, VDS=0V  
VDS =32V, VGS =0V  
VDS =32V, VGS =0V, Tj=125C  
VGS =10V, ID=50A  
IDSS  
μA  
25  
2.1  
Ω
m
*RDS(ON)  
Dynamic  
*Qg  
1.4  
-
-
-
-
-
-
-
-
-
-
-
174.1  
39.2  
54  
40.2  
25.2  
118.2  
40  
8756  
1108  
666  
-
-
-
-
-
-
-
-
-
-
-
*Qgs  
*Qgd  
*td(ON)  
*tr  
*td(OFF)  
*tf  
Ciss  
Coss  
Crss  
Rg  
nC  
VDD=20V, ID=50A,VGS=10V  
Ω
VDD=20V, ID=50A, VGS=10V, RG=1  
ns  
pF  
VGS=0V, VDS=20V, f=1MHz  
f=1MHz  
Ω
2.5  
Source-Drain Diode  
*IS  
*ISM  
*VSD  
*trr  
-
-
-
-
-
-
-
208  
758  
1.2  
-
A
0.79  
33.2  
29.6  
V
ns  
nC  
IS=30A, VGS=0V  
VGS=0V, IF=30A, dIF/dt=100A/μs  
*Qrr  
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/ 9  
Typical Characteristics  
Brekdown Voltage vs Junction Temperature  
Typical Output Characteristics  
1.4  
1.2  
1
300  
270  
240  
210  
180  
150  
120  
90  
10V,9V,8V,7V,6V  
5.5V  
5V  
0.8  
0.6  
0.4  
ID=250μA,  
VGS=0V  
60  
4.5V  
30  
VGS=4V  
0
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
0
1
2
3
4
5
Tj, Junction Temperature(°C)  
VDS, Drain-Source Voltage(V)  
Static Drain-Source On-State resistance vs Drain Current  
Reverse Drain Current vs Source-Drain Voltage  
10  
1.2  
VGS= 6V  
7V  
10V  
1
0.8  
0.6  
0.4  
0.2  
Tj=25°C  
Tj=150°C  
1
0.1  
1
10  
100  
0
2
4
6
8
10 12 14 16 18 20  
ID, Drain Current(A)  
IDR, Reverse Drain Current(A)  
Drain-Source On-State Resistance vs Junction Tempearture  
VGS=10V, ID=50A  
Static Drain-Source On-State Resistance vs Gate-Source  
Voltage  
10  
2.8  
2.4  
2
9
8
7
6
5
4
3
2
1
0
ID=50A  
1.6  
1.2  
0.8  
0.4  
0
RDS(ON)@Tj=25°C : 1.4mΩ typ.  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
0
2
4
6
8
10  
VGS, Gate-Source Voltage(V)  
Tj, Junction Temperature(°C)  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/ 9  
Typical Characteristics(Cont.)  
Threshold Voltage vs Junction Tempearture  
Capacitance vs Drain-to-Source Voltage  
100000  
1.4  
1.2  
1
Ciss  
ID=1mA  
10000  
1000  
100  
0.8  
0.6  
0.4  
0.2  
Coss  
ID=250μA  
Crss  
5
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
0
10  
15  
20  
25  
30  
VDS, Drain-Source Voltage(V)  
Tj, Junction Temperature(°C)  
Forward Transfer Admittance vs Drain Current  
VDS=10V  
Gate Charge Characteristics  
100  
10  
10  
VDS=20V  
VDS=30V  
8
6
4
2
0
VDS=15V  
1
0.1  
0.01  
Pulsed  
Ta=25°C  
ID=50A  
0
20 40 60 80 100 120 140 160 180 200  
Total Gate Charge---Qg(nC)  
0.001  
0.01  
0.1  
1
10  
100  
ID, Drain Current(A)  
Maximum Drain Current vs Case Temperature  
silicon limit  
Maximum Safe Operating Area  
300  
250  
200  
150  
100  
50  
10000  
1000  
100  
10  
RDS(ON)  
Limited  
10μs  
100μs  
1ms  
package limit  
10ms  
100ms  
DC  
TC=25°C, Tj=175°C,  
VGS=10V,RθJC=0.6°C/W  
single pulse  
1
VGS=10V, RθJC=0.6°C/W  
0
0.1  
25  
50  
75  
100 125 150 175 200  
0.1  
1
10  
100  
VDS, Drain-Source Voltage(V)  
TC, Case Temperature(°C)  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/ 9  
Typical Characteristics(Cont.)  
Single Pulse Maximum Power Dissipation  
Typical Transfer Characteristics  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
300  
270  
240  
210  
180  
150  
120  
90  
VDS=10V  
TJ(MAX)=175°C  
TC=25°C  
RθJC=0.6°C/W  
60  
30  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0.0001  
0.001  
0.01 0.1  
Pulse Width(s)  
1
10  
VGS, Gate-Source Voltage(V)  
Transient Thermal Response Curves  
1
D=0.5  
1.RθJC(t)=r(t)*RθJC  
2.Duty Factor, D=t1/t2  
3.TJM-TC=PDM*RθJC(t)  
4.RθJC=0.6 °C/W  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
Single Pulse  
0.01  
1.E-05  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
t1, Square Wave Pulse Duration(s)  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 7/ 9  
Reel Dimension  
Carrier Tape Dimension  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 8/ 9  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3C/second max.  
3C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100C  
150C  
60-120 seconds  
150C  
200C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183C  
60-150 seconds  
217C  
60-150 seconds  
Peak Temperature(TP)  
240 +0/-5 C  
260 +0/-5 C  
Time within 5C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
6C/second max.  
6C/second max.  
6 minutes max.  
8 minutes max.  
Time 25 C to peak temperature  
Note : All temperatures refer to topside of the package, measured on the package body surface.  
MTE1D3N04F3  
CYStek Product Specification  
Spec. No. : C151F3  
Issued Date : 2018.12.17  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 9/ 9  
TO-263 Dimension  
Marking :  
E1D3  
N04  
□□□□  
Device Name  
Date Code  
Style : Pin 1.Gate 2.Drain  
3.Source  
3-Lead Plastic Surface Mounted Package  
CYStek Package Code : F3  
Date Code : (From left to right)  
First Code : Year code, the last digit of Christinr year. For example, 20144, 2015, 20166, , etc.  
Second Code : Month code, JanA, FebB, MarC, AprD, MayE, JunF, JulG, AugH, SepJ,  
OctK, NovL, DecM  
Third and fourth codes : production serial number, 01~99  
Millimeters  
Min.  
Inches  
Millimeters  
Inches  
DIM  
DIM  
Max.  
4.70  
0.25  
2.79  
0.90  
0.86  
1.36  
1.32  
0.47  
0.43  
Min.  
Max.  
0.185  
0.010  
0.110  
0.035  
0.034  
0.054  
0.052  
0.019  
0.017  
Min.  
10.06  
7.80  
Max.  
10.26  
8.20  
Min.  
0.396  
0.307  
Max.  
0.404  
0.323  
A
4.40  
0.00  
2.59  
0.77  
0.76  
1.23  
1.22  
0.34  
0.33  
1.22  
9.05  
6.60  
0.173  
0.000  
0.102  
0.030  
0.030  
0.048  
0.048  
0.013  
0.013  
E
E1  
e
A1  
A2  
b
2.54 BSC  
0.100 BSC  
H
14.70  
2.00  
1.17  
-
15.50  
2.60  
1.40  
1.75  
0.579  
0.610  
0.102  
0.055  
0.069  
b1  
b2  
b3  
c
L
0.079  
0.046  
-
L1  
L2  
L3  
L4  
θ
0.25 BSC  
2.00 REF  
0.010 BSC  
0.079 BSC  
c1  
c2  
D
1.32  
9.25  
-
0.048  
0.356  
0.260  
0.052  
0.364  
-
0  
5  
1  
8  
9  
5  
0  
8  
9  
5  
Θ1  
Θ2  
5  
1  
D1  
Notes : 1.Controlling dimension : millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material :  
Lead : Pure tin plated.  
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTE1D3N04F3  
CYStek Product Specification  

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