MTE2D0N06RF3 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTE2D0N06RF3
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：426K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

N-Channel Enhancement Mode Power MOSFET

MTE2D0N06RF3

BV^DSS

ID@VGS=10V, TC=25°C

60V

75A

18.5A

Features

ID@VGS=10V, TA=25°C

RDS(ON)@VGS=10V, ID=50A

2.8mΩ(typ)

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

TO-263

MTE2D0N06RF3

G：Gate D：Drain S：Source

Ordering Information

Device

Package

TO-263

(Pb-free lead plating and RoHS compliant package)

Shipping

MTE2D0N06RF3-0-T7-X

800 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T7 : 800 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 2/ 9

Absolute Maximum Ratings (TC=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage (Note 1)

Gate-Source Voltage

Continuous Drain Current @ TC=25°C, VGS=10V (silicon limit) (Note 1)

Continuous Drain Current @ TC=100°C, VGS=10V (silicon limit) (Note 1)

Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1)

Continuous Drain Current @TA=25°C, VGS=10V

Continuous Drain Current @TA=70°C, VGS=10V

Pulsed Drain Current @ VGS=10V

VDS

VGS

±30

170

120

18.5

14.8

578

100

(Note 2)

I^DSM

(Note 2)

IDM

IAS

Avalanche Current @L=0.1mH

Single Pulse Avalanche Energy @ L=1mH, ID=50 Amps, VDD=25V

EAS

EAR

1250

(Note 4)

Repetitive Avalanche Energy

(Note 3)

(Note 1)

(Note 2)

163

81.5

TC=25°C

TC=100°C

TA=25°C

TA=70°C

Power Dissipation

PDSM

1.3

Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)

from case for 10 seconds

Maximum Temperature for Soldering @ Package Body for 10

seconds

300

260

°C

TPKG

Operating Junction and Storage Temperature

Tj, Tstg -55~+175

*Drain current limited by maximum junction temperature

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max (Note 2)

Symbol

RθJC

RθJA

Value

0.92

62.5

Unit

°C/W

Note : 1 The power dissipation P_Dis based on T_J(MAX)=175 C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2 The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air

environment with T_A=25 C. The power dissipation P_DSMis based on R_θJAand the maximum allowed junction

temperature of 150°C. The value in any given application depends on the user’s specific board design, and the

maximum temperature of 175°C may be used if the PCB allows it.

3 Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175 C. Ratings are based on low frequency

and low duty cycles to keep initial TJ=25°C.

4. 100% tested by condition of V^DD=25V, ID=25A, L=1mH, VGS=15V.

5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.

6. The R^θJAis the sum of thermal resistance from junction to case RθJC and case to ambient

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 3/ 9

Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

24.2

2.8

100

mV/°C

V_GS=0V, I_D=250μA

Reference to 25°C, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=20A

*G_FS

I_GSS

V_GS= 30V, V_DS=0V

V_DS=48V, V_GS=0V

V_DS=48V, V_GS=0V, Tj=125°C

V_GS=10V, I_D=50A

I_DSS

μA

*R_DS(ON)

Dynamic

*Qg

3.4

124

V_DD=48V, I_D=50A,V_GS=10V

*Qgs

*Qgd

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

35.9

48.4

40.6

77.6

27.8

7289

1179

151

V_DD=30V, I_D=50A, V_GS=10V, R_G=1

V_GS=0V, V_DS=30V, f=1MHz

f=1MHz

1.4

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

578

1.2

0.83

42.3

43.3

I_S=30A, V_GS=0V

V_GS=0V, I_F=30A, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 4/ 9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

200

180

160

140

120

100

10V, 9V, 8V

0.8

0.6

0.4

I_D=250 A,

V_GS=0V

V_GS=4.5V

-75 -50 -25

25 50 75 100 125 150 175 200

_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

1.2

V_GS=0V

V_GS=10V

Tj=25°C

0.8

0.6

0.4

0.2

Tj=150°C

10 12 14 16 18 20

0.1

I_D, Drain Current(A)

100

_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

2.4

I_D=50A

V_GS=10V, I_D=50A

1.6

1.2

0.8

0.4

R_DS(ON)@Tj=25°C : 2.8mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175 200

_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 5/ 9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

I_D=1mA

0.8

0.6

0.4

0.2

1000

oss

I_D=250 A

Crss

100

-75 -50 -25

25 50 75 100 125 150 175 200

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

100

V_DS=30V

V_DS=12V

V_DS=10V

V_DS=48V

V_DS=15V

0.1

0.01

Ta=25°C

Pulsed

I_D=50A

100 120

140

0.001

0.01

0.1

100

I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

200

180

160

140

120

100

1000

10 s

R_DSON

Limited

100μs

silicon limit

100

1ms

10ms

package limit

100ms

T_C=25°C, Tj=175°C

V_GS=10V, R _JC=0.92°C/W

V_GS=10V, R =0.92°C/W

Single Pulse

0.1

100 125 150 175 200

0.1

_DS, Drain-Source Voltage(V)

100

T_C, Case Temperature(°C)

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 6/ 9

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Case

Typical Transfer Characteristics

200

1500

1200

900

600

300

V_DS=10V

180

160

140

120

100

T_J(MAX)=175°C

T_C=25°C

_JC=0.92°C/W

0.0001

0.001

0.01 0.1

Pulse Width(s)

_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

0.2

1.R _JC(t)=r(t)*R

2.Duty Factor, D=t¹/t²

3.T^JM-T^C=P^DM*R_θ^JC(t)

0.1

0.05

_JC=0.92°C/W

4.R

0.1

0.02

0.01

Single Pulse

0.01

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t₁, Square Wave Pulse Duration(s)

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 7/ 9

Reel Dimension

Carrier Tape Dimension

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 8/ 9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTE2D0N06RF3

CYStek Product Specification

Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 9/ 9

TO-263 Dimension

Marking :

E2D0

N06R

□□□□

Device Name

Date Code

Style : Pin 1.Gate 2.Drain

3.Source

3-Lead Plastic Surface Mounted Package

CYStek Package Code : F3

Date Code : (From left to right)

First Code : Year code, the last digit of Christinr year. For example, 2014→4, 2015→, 2016→6, …, etc.

Second Code : Month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J,

Oct→K, Nov→L, Dec→M

Third and fourth codes : production serial number, 01~99

Millimeters

Min.

Inches

Millimeters

Inches

DIM

Max.

4.70

0.25

2.79

0.90

0.86

1.36

1.32

0.47

0.43

1.32

Min.

Max.

0.185

0.010

0.110

0.035

0.034

0.054

0.052

0.019

0.017

0.052

Min.

10.06

7.80

Max.

10.26

8.20

Min.

0.396

0.307

Max.

0.404

0.323

4.40

0.00

2.59

0.77

0.76

1.23

1.22

0.34

0.33

1.22

9.05

6.60

0.173

0.000

0.102

0.030

0.048

0.013

0.048

2.54 BSC

0.100 BSC

14.70

2.00

1.17

15.50

2.60

1.40

1.75

0.579

0.610

0.102

0.055

0.069

0.079

0.046

0.25 BSC

2.00 REF

0.010 BSC

0.079 BSC

0°

5°

1°

8°

9°

5°

0°

5°

1°

8°

9°

5°

9.25

0.356

0.260

0.364

Θ1

Θ2

Notes : 1.Controlling dimension : millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material :

• Lead : Pure tin plated.

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTE2D0N06RF3

CYStek Product Specification

MTE2D0N06RF3 [CYSTEKEC]

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