MTE3D0N04E3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE3D0N04E3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 1 / 8
N-Channel Enhancement Mode Power MOSFET
MTE3D0N04E3
BVDSS
40V
130A(silicon limit)
120A(package limit)
16.7A
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=70A
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
2.7 mΩ(typ)
Fast Switching Characteristic
RoHS compliant package
Symbol
Outline
TO-220
MTE3D0N04E3
G D S
G：Gate D：Drain S：Source
Ordering Information
Device
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Package
TO-220
(RoHS compliant)
MTE3D0N04E3-0-UB-X
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 2 / 8
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V (silicon limit) (Note 1)
Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25C, VGS=10V (package limit)(Note 1)
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
VDS
VGS
40
±20
130
92
120
16.7
13.4
520
90
V
ID
A
(Note 2)
IDSM
(Note 2)
IDM
IAS
Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=1mH, ID=40A, VDD=25V (Note 4)
EAS
EAR
800
5
150
75
2.1
1.3
mJ
W
Repetitive Avalanche Energy
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
TC=25C
TC=100C
TA=25C
TA=70C
PD
Power Dissipation
PDSM
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TL
300
260
C
TPKG
Operating Junction and Storage Temperature
Tj, Tstg -55~+175
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1
60
Unit
C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. 100% tested by condition of VDD=25V, ID=50A, L=0.1mH, VGS=10V.
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 3 / 8
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
40
-
0.03
-
24.5
-
-
-
2.7
3.6
-
-
3.9
-
100
1
25
V
V/C
V
S
nA
VGS=0V, ID=250μA
-
2.2
-
-
-
-
-
-
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
*GFS
IGSS
±
±
VGS= 20V, VDS=0V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125C
VGS =10V, ID=70A
IDSS
μA
3.7
-
Ω
m
*RDS(ON)
VGS =6V, ID=35A
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
73.9
19.2
19.1
27.6
11.2
58.4
13.2
4044
568
110
39
39
-
-
-
-
5258
738
429
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
nC
VDS=20V, VGS=10V, ID=66A
VDS=20V, ID=30A, VGS=10V,
ns
Ω
RGS=2.7
pF
VDS=25V, VGS=0V, f=1MHz
f=1MHz
330
1.1
Ω
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
120
520
1.3
-
A
0.9
20
11.6
V
ns
nC
IS=70A, VGS=0V
VGS=0V, IF=70A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 4 / 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
200
160
120
80
10V,9V,8V,7V,6V
5V
0.8
0.6
0.4
4.5V
ID=250μA,
40
VGS=0V
VGS=4V
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
1.2
10
1.0
0.8
0.6
0.4
0.2
VGS=6V
7V
10V
Tj=25°C
Tj=150°C
1
0
2
4
6
8
10
0.1
1
10
100
IDR, Reverse Drain Current(A)
ID, Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
30
25
20
15
10
5
2.8
VGS=10V, ID=20A
2.4
2.0
1.6
1.2
0.8
0.4
0.0
RDS(ON)@Tj=25°C : 2.7mΩ typ.
ID=20A
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 5 / 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
ID=1mA
1000
Coss
ID=250μA
Crss
f=1MHz
100
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
100
10
VDS=5V
8
6
4
2
0
VDS=10V
1
0.1
0.01
VDS=66V
ID=20A
Pulsed
Ta=25°C
0
10 20 30 40 50 60 70 80 90 100
Qg, Total Gate Charge(nC)
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Silicon Limit
Maximum Safe Operating Area
150
120
90
60
30
0
1000
100
10
10μs
RDS(ON)
100μs
Limited
1ms
Package Limit
10ms
100ms
DC
TA=25°C, Tj=150°C
VGS=10V,RθJC=1°C/W
Single Pulse
1
RθJC=1°C/W,VGS=10V
0.1
25
50
75
100 125 150 175 200
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
Tc, Case Temperature(°C)
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 6 / 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Case
(Note on page 2)
300
250
200
150
100
50
3000
2500
2000
1500
1000
500
VDS=10V
TJ(MAX)=150°C
TC=25°C
RθJC=1°C/W
0
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
1
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJC(t)
4.RθJC=1°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
t1, Square Wave Pulse Duration(s)
1.E-01
1.E+00
1.E+01
Typical Transfer Characteristics
20
18
16
14
12
10
8
VDS=10V
25°C
125°C
-40°C
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 7 / 8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE3D0N04E3
CYStek Product Specification
Spec. No. : C014F3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 8 / 8
TO-220 Dimension
Marking:
4
E3D0
N04
□□□□
Device Name
Date Code
1 2 3
3-Lead TO-220 Plastic Package
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
CYStek Package Code: E3
*: Typical
Millimeters
Inches
Min.
Millimeters
Min. Max.
2.540*
4.980
2.650
7.900
0.000
Inches
DIM
DIM
Min.
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
Min.
Max.
A
A1
b
b1
c
c1
D
E
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.950
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
e
e1
F
H
h
L
L1
V
0.100*
5.180
2.950
8.100
0.300
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
12.900 13.400
2.850
3.250
7.500 REF
0.295 REF
Φ
12.950
0.510
E1
12.650
0.498
3.400
3.800
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE3D0N04E3
CYStek Product Specification
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