MTN2N65CJ3-0-T3-G [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTN2N65CJ3-0-T3-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：465K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 1/9

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

MTN2N65CJ3

BVDSS

ID @VGS=10V, TC=25°C

650V

1.3A

ID @VGS=10V, TC=100°C

RDS(ON)@VGS=10V, ID=1A

Features

• Low On Resistance

4.5Ω(typ)

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• Pb-free lead plating and halogen-free package

Applications

• Open Framed Power Supply

• Adapter

• STB

Symbol

Outline

TO-252(DPAK)

MTN2N65CJ3

D S

G：Gate D：Drain S：Source

Ordering Information

Device

Package

TO-252

Shipping

MTN2N65CJ3-0-T3-G

2500 pcs / Tape & Reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 2/9

CYStech Electronics Corp.

Absolute Maximum Ratings (TC=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

VDS

VGS

650

±30

2.0

1.3

8.0

Continuous Drain Current @TC=100°C

Pulsed Drain Current @ VGS=10V

Single Pulse Avalanche Current

(Note 1)

(Note 2)

IDM

IAS

Single Pulse Avalanche Energy @L=2mH, VGS=10V, VDD= 50V (Note 2)

Repetitive Avalanche Energy

EAS

EAR

(Note 1)

Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)

from case for 10 seconds

300

°C

Total Power Dissipation (TA=25℃)

1.14

W/°C

°C

Total Power Dissipation (TC=25℃)

Linear Derating Factor

Operating Junction and Storage Temperature

0.35

Tj, Tstg -55~+150

Note : 1 Pulse width limited by maximum junction temperature.

℃

2 100% testsed by conditions of I_AS=1A, V_DD=50V, L=2mH, V_GS=10V, starting T_J=+25

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Symbol

RθJC

RθJA

Value

2.8

110

Unit

°C/W

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 3/9

CYStech Electronics Corp.

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

℃

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

650

0.7

2.3

4.5

4.0

100

V_GS=0V, I_D=250μA, Tj=25

2.0

V/°C

Reference to 25°C, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=15V, I_D=1A

*G_FS

I_GSS

V_GS= 30V

V_DS=650V, V_GS=0V

I_DSS

μA

V_DS=520V, V_GS=0V, T_C=125°C

V_GS=10V, I_D=1A

*R_DS(ON)

Dynamic

*Qg

5.8

7.8

2.3

2.4

5.4

3.2

8.6

5.6

268

11.7

10.8

6.4

17.2

11.2

402

I_D=2A, V_DD=520V, V_GS=10V

V_DD=325V, I_D=1.8A, V_GS=10V,

*Qgs

*Qgd

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

R_G=25

V_GS=0V, V_DS=25V, f=1MHz

f=1MHz

3.7

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

1.5

0.8

286

760

I_S=1A, V_GS=0V

V_GS=0V, I_F=1.8A, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Recommended soldering footprint

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 4/9

CYStech Electronics Corp.

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.2

1.1

10V,9V,8V,7V,6V,5.5V

0.9

0.8

0.7

0.6

4.5V

I_D=250μA,

V_GS=0V

V_GS=4V

-75 -50 -25

25 50 75 100 125 150 175

V_DSDrain-Source Voltage(V)

T_AAmbient Temperature(°C)

Drain Current vs Gate-Source Voltage

Static Drain-Source On-State resistance vs Drain Current

T_A=25°C

3.5

V_GS=10V

V_DS=30V

2.5

1.5

V_DS=10V

0.5

0.001

0.01

0.1

Drain Current(A)

Gate-Source Voltage(V)

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

Forward Drain Current vs Source-Drain Voltage

Ta=25°C

VGS=0V

Tj=150°C

0.1

Tj=25°C

0.01

0.001

I_D=1A

0.2

0.4

0.6

0.8

1.2

1.4

V_SDSource Drain Voltage(V)

V_GSGate-Source Voltage(V)

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 5/9

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Capacitance vs Reverse Voltage

Static Drain-Source On-resistance vs Ambient Temperature

1000

3.2

2.8

2.4

Ciss

100

Coss

1.6

1.2

0.8

0.4

Crss

I_D=1A,

V_GS=10V

f=1MHz

-75 -50 -25

25 50 75 100 125 150 175

V_DSDrain-to-Source Voltage(V)

T_AAmbient Temperature(°C)

Gate Charge Characteristics

Maximum Safe Operating Area

100μs

1ms

V_DS=130V

V_DS=325V

10ms

100ms

V_DS=520V

Operation in this area is

limited by R_DS(ON)

0.1

0.01

I_D=1.8A

100

1000

Qg, Total Gate Charge(nC)

V_DS, Drain-Source Voltage(V)

Maximum Drain Current vs Case Temperature

Threshold Voltage vs Junction Tempearture

2.5

1.4

1.2

I_D=1mA

1.5

0.8

0.6

0.4

0.2

0.5

I_D=250μA

θJC

V_GS=10V, R =2.8°C/W

100

125

150

175

-75 -50 -25

25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

T_C, Case Temperature(°C)

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 6/9

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Case

Forward Transfer Admittance vs Drain Current

3500

3000

2500

2000

1500

1000

500

T_J(MAX)=150°C

T_C=25°C

_JC=2.8°C/W

0.1

0.01

V_DS=15V

Ta=25°C

Pulsed

0.000 0.001 0.01

0.1

100 1000

0.001

0.01

0.1

I_D, Drain Current(A)

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.R _JC(t)=r(t)*R

0.1

2.Duty Factor, D=t¹/t²

3.T^JM-T^C=P^DM*R_θ^JC(t)

0.05

_JC=2.8°C/W

4.R

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 7/9

CYStech Electronics Corp.

Reel Dimension

Carrier Tape Dimension

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 8/9

CYStech Electronics Corp.

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts ^minto ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

217°C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 °C

260 +0/-5 °C

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTN2N65CJ3

CYStek Product Specification

Spec. No. : C082J3

Issued Date : 2016.02.24

Revised Date : 2016.02.25

Page No. : 9/9

CYStech Electronics Corp.

TO-252 Dimension

Marking:

Device

Name

CYS

2N65C

□□□□

Date

Code

3-Lead TO-252 Plastic Surface Mount Package

CYStek Package Code: J3

Style: Pin 1.Gate 2.Drain 3.Source

4.Drain

Inches

Min.

Millimeters

Inches

Millimeters

DIM

Max.

0.094

0.005

0.048

0.034

0.023

0.264

0.215

0.244

Min.

Max.

2.400

0.127

1.210

0.860

0.580

6.700

5.460

6.200

Min.

0.086

0.172

Max.

0.094

0.188

Min.

2.186

4.372

Max.

2.386

4.772

0.087

0.000

0.039

0.026

0.018

0.256

0.201

0.236

2.200

0.000

0.990

0.660

0.460

6.500

5.100

6.000

0.163 REF

0.190 REF

0.386 0.409

0.114 REF

4.140 REF

4.830 REF

9.800 10.400

2.900 REF

0.055

0.024

0.067

0.039

1.400

0.600

1.700

1.000

0.026 REF

0.211 REF

0.650 REF

5.350 REF

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead : Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTN2N65CJ3

CYStek Product Specification

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