MTN3N60CI3-0-UA-G [CYSTEKEC]
Channel Enhancement Mode Power MOSFET;
| 型号： | MTN3N60CI3-0-UA-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：506K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
600V
3A
MTN3N60CI3
RDS(ON)@VGS=10V, ID=1.5A
3Ω(typ)
Features
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
MTN3N60CI3
TO-251
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
Package
TO-251
Shipping
80 pcs/tube, 50 tubes/box
MTN3N60CI3-0-UA-G
(RoHS compliant and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
VDS
Limits
600
±30
3
1.9
12
22.5
3
3.3
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
ID
A
(Note 1)
(Note 2)
(Note 1)
(Note 1)
IDM
EAS
IAS
mJ
A
mJ
Repetitive Avalanche Energy
EAR
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
TL
300
°C
Total Power Dissipation (TA=25℃)
1.14
W
PD
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
50
0.4
W/°C
°C
Tj, Tstg -55~+150
.
Note : 1 Repetitive rating; pulse width limited by maximum junction temperature.
℃
.
2 IAS=3A, VDD=50V, L=5mH, VGS=10V, starting TJ=+25 . 100% tested by conditions of L=1mH, IAS=3A, VGS=10V,
V
DD=50V.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
℃
BVDSS
∆BVDSS/∆Tj
VGS(th)
600
-
0.7
-
3
-
-
-
4
-
100
1
10
V
VGS=0V, ID=250μA, Tj=25
-
2
-
-
-
V/°C
V
S
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=1.5A
*GFS
IGSS
±
±
nA
VGS= 30V
-
-
VDS =600V, VGS =0V
IDSS
μA
-
VDS =480V, VGS =0V, Tj=125°C
Ω
*RDS(ON)
Dynamic
*Qg
-
3
3.7
VGS =10V, ID=1.5A
-
-
-
-
-
-
-
11.6
2.2
4.9
7.8
8.6
-
-
-
-
-
-
-
nC
ns
ID=3A, VDD=480V, VGS=10V
VDS=300V, ID=3A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ω
RG=25
21.4
10.6
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 3/10
Ciss
Coss
Crss
Rg
-
-
-
-
332
44
15
-
-
-
-
pF
VGS=0V, VDS=25V, f=1MHz
Ω
3.3
f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
3
12
1.5
-
A
0.84
345
1.2
V
ns
μC
IS=3A, VGS=0V
VGS=0V, IF=3A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 4/10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
5
10V
9V
4
3
2
1
0
8V
7V
6V
5.5V
5V
ID=250μA,
4.5V
VGS=0V
VGS=4V
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
VDS, Drain-Source Voltage(V)
40
50
,
TA Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
6
5
4
3
2
1
0
5
Ta=25°C
VGS=10V
VDS=30V
4
3
2
1
0
VDS=10V
0
2
4
6
8
10
0.01
0.1
1
10
ID, Drain Current(A)
V
GS
, Gate-Source Voltage(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Forward Drain Current vs Source-Drain Voltage
100
10
6
VGS=0V
5
4
3
2
1
0
1
Ta=150°C
Ta=25°C
0.1
0.01
0.001
ID=1.5A
Ta=25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
VSD, Source Drain Voltage(V)
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Static Drain-Source On-resistance vs Ambient Temperature
1000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ciss
ID=1.5A,
VGS=10V
100
10
Coss
Crss
f=1MHz
5
RDSON@Tj=25°C : 3Ωtyp.
1
0
10
15
20
25
30
1000
175
-75 -50 -25
0
25 50 75 100 125 150 175
,
TA Ambient Temperature(°C)
VDS, Drain-to-Source Voltage(V)
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
10
8
10
μ
s
μ
100 s
VDS=120V
VDS=300V
RDS(ON)
Limited
1ms
6
10ms
1
VDS=480V
100ms
4
DC
TC=25°C, Tj(max)=150°C
θ
0.1
0.01
2
VGS=10V, R JC=2.5°C/W
ID=3A
10
Single pulse
0
0
2
4
6
8
12
1
10
100
VDS, Drain-Source Voltage(V)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
3.5
3
1.4
1.2
1
ID=1mA
2.5
2
1.5
1
0.8
0.6
0.4
ID=250μA
0.5
0
θ
VGS=10V, R JC=2.5°C/W
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
C
T , Case Temperature(°C)
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 6/10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
10
3000
2700
2400
2100
1800
1500
1200
900
TJ(MAX)=150°C
TC=25°C
1
θ
R
JC=2.5°C/W
0.1
0.01
VDS=15V
Ta=25°C
Pulsed
600
300
0
0.001
0.01
0.1
ID, Drain Current(A)
1
10
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
D=0.5
0.2
JC
θ
θ
1.R JC(t)=r(t)*R
1
2
2.Duty Factor, D=t /t
0.1
JM
C
DM
JC
3.T -T =P *Rθ (t)
0.1
JC=2.5 C/W
θ
4.R
°
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 7/10
Test Circuit and Waveforms
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 8/10
Test Circuit and Waveforms(Cont.)
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3N60CI3
CYStek Product Specification
Spec. No. : C118I3
Issued Date : 2015.12.26
Revised Date :
CYStech Electronics Corp.
Page No. : 10/10
TO-251 Dimension
Marking:
Product
Name
Date
CYS
3N60C
□□□□
Code
1
2
3
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Millimeters
DIM
Inches
Min.
0.252
0.205
0.268
0.283
Millimeters
Inches
Min.
DIM
Min.
6.40
5.20
6.80
7.20
Max.
Max.
0.268
0.217
0.283
0.307
Min.
Max.
0.70
2.40
0.55
0.60
1.50
5.80
Max.
0.028
0.094
0.022
0.024
0.059
0.228
A
B
C
D
E
F
6.80
5.50
7.20
7.80
G
H
J
K
L
0.50
2.20
0.45
0.45
0.90
5.40
0.020
0.087
0.018
0.018
0.035
0.213
2.30 REF
0.091 REF
0.60
0.90
0.024
0.035
M
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3N60CI3
CYStek Product Specification
相关型号：
©2020 ICPDF网 联系我们和版权申明