MTN6N70J3-0-T3-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTN6N70J3-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总11页 (文件大小：716K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID @VGS=10V, TC=25°C
700V
6A
3.8A
MTN6N70J3
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=3A
1.17Ω(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free Lead Plating and Halogen-free Package
Applications
Open Framed Power Supply
Adapter
STB
Symbol
Outline
TO-252(DPAK)
MTN6N70J3
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
Package
TO-252
Shipping
2500 pcs / Tape & Reel
MTN6N70J3-0-T3-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 2/11
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
700
±30
6*
3.8*
24*
6
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100C
Pulsed Drain Current @ VGS=10V
ID
A
(Note 1)
(Note 1)
IDM
IAS
Avalanche Current
Single Pulse Avalanche Energy @L=5mH, IAS=6A, VDD=50V
Repetitive Avalanche Energy
EAS
EAR
90
11
mJ
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
TL
PD
300
C
W
W/C
C
114
0.91
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
*100% UIS testing in condition of VDD=50V, L=7mH, VG=10V, IL=1.6A, Rated VDS=700V
.
Note : 1 Repetitive rating; pulse width limited by maximum junction temperature.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
Value
1.1
50
Unit
C/W
RθJA
110
1. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C.
2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C.
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 3/11
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
℃
BVDSS
∆BVDSS/∆Tj
VGS(th)
700
-
0.8
-
8.6
-
-
-
4.0
-
100
1
10
V
VGS=0V, ID=250μA, Tj=25
-
2.0
-
-
-
V/C
V
S
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=3A
*GFS
IGSS
nA
±
±
VGS= 30V, VDS=0V
-
-
VDS =700V, VGS =0V
IDSS
μA
-
-
VDS =580V, VGS =0V, Tj=125C
VGS =10V, ID=3A
Ω
*RDS(ON)
Dynamic
*Qg
1.17
1.52
-
-
-
-
-
-
-
-
-
-
28.9
5.3
9.9
15.2
8.4
41.4
10.4
1254
50
-
-
-
-
-
-
-
-
-
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
nC
ns
pF
A
ID=3A, VDD=560V, VGS=10V
VDD=350V, ID=3A, VGS=10V,
Ω
RG=1
VGS=0V, VDS=100V, f=1MHz
5.3
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
6
24
1.3
-
0.92
380
2.55
V
ns
μC
IS=6A, VGS=0V
VGS=0V, IF=6A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended soldering footprint
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 4/11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
16
10V
9V
14
8V
12
7V
6V
10
5V
4.5V
8
6
4
2
0
ID=250μA,
VGS=0V
VGS=4V
40
-75 -50 -25
0
25 50 75 100 125 150 175
0
10
20
30
50
TA, Ambient Temperature(°C)
VDS, Drain-Source Voltage(V)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
16
14
12
10
8
2.0
1.6
1.2
0.8
0.4
0.0
VDS=30V
Ta=25°C
VGS=10V
VDS=10V
6
4
2
0
0
2
4
6
8
10
0.01
0.1
1
10
ID, Drain Current(A)
VGS, Gate-Source Voltage(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Forward Drain Current vs Source-Drain Voltage
100
10
6
5
4
3
2
1
0
VGS=0V
1
Ta=150°C
Ta=25°C
0.1
0.01
0.001
ID=3A
Ta=25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
VSD, Source Drain Voltage(V)
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 5/11
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Static Drain-Source On-resistance vs Ambient Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID=3A,
Ciss
VGS=10V
1000
100
10
Coss
Crss
f=1MHz
RDSON@Tj=25°C : 1.2Ωtyp.
1
0
10 20 30 40 50 60 70 80 90 100
VDS, Drain-to-Source Voltage(V)
-75 -50 -25
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
10
8
10μs
VDS=140V
100μs
VDS=350V
RDS(ON)
Limited
1ms
6
10ms
VDS=560V
1
100ms
4
DC
TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=1.1°C/W
Single pulse
0.1
0.01
2
ID=3A
0
0
6
12
18
24
30
36
1
10
100
1000
Qg, Total Gate Charge(nC)
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
7
6
5
4
3
2
1
0
1.4
1.2
1
ID=1mA
0.8
0.6
0.4
ID=250μA
VGS=10V, RθJC=1.1°C/W
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
TC, Case Temperature(°C)
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 6/11
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
100
10
3000
2700
TJ(MAX)=150°C
2400
TC=25°C
2100
RθJC=1.1°C/W
1800
1500
1200
900
600
300
0
1
VDS=10V
0.1
0.01
Ta=25°C
Pulsed
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.1°C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 7/11
Test Circuits and Waveforms
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 8/11
Test Circuits and Waveforms(Cont.)
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 9/11
Reel Dimension
Carrier Tape Dimension
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
240 +0/-5 C
260 +0/-5 C
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN6N70J3
CYStek Product Specification
Spec. No. : C060J3
Issued Date : 2018.05.11
Revised Date :
CYStech Electronics Corp.
Page No. : 11/11
TO-252 Dimension
Marking:
4
Device
Name
CYS
6N70
□□□□
Date
Code
2
3
1
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
DIM
Millimeters
Inches
Min. Max.
0.090 BSC
Millimeters
Min. Max.
2.286 BSC
DIM
Min.
Max.
Min.
Max.
2.400
0.200
1.170
0.900
5.500
0.630
6.220
A
A1
A2
b
b3
c
0.087
0.000
0.038
0.027
0.205
0.017
0.235
0.094
0.008
0.046
0.035
0.217
0.025
0.245
2.200
0.000
0.970
0.680
5.200
0.430
5.980
e
H
L
L1
L2
L3
L4
L5
θ
0.370
0.054
0.413
0.069
9.400
1.380
10.500
1.750
0.114 REF
0.020 BSC
2.900 REF
0.510 BSC
0.880 1.280
0.035
0.050
0.039
0.077
8°
D
-
-
1.000
1.950
8°
D1
E
E1
0.209 REF
5.300 REF
0.065
0°
1.650
0°
0.252
0.182
0.268
-
6.400
4.630
6.800
-
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead : Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6N70J3
CYStek Product Specification
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