ES3B [DAESAN]

CURRENT 3.0 Amperes VOLTAGE 50 to 400 Volts; 当前3.0安培电压50至400伏


型号：	ES3B
厂家：	DAESAN ELECTRONICS CORP.
描述：	CURRENT 3.0 Amperes VOLTAGE 50 to 400 Volts 当前3.0安培电压50至400伏二极管光电二极管 IOT 超快速恢复二极管
文件：	总2页 (文件大小：336K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CURRENT 3.0 Amperes

VOLTAGE 50 to 400 Volts

ES3A THRU ES3J

Features

· For surface applications in order optimize board space

· Low profile package

· Built-in strain relief, ideal for automated placement

· Super fast recovery time

DO-214AB (SMC)

· Plastic package has Unerwrites Laboratory

Flammability Classification 94V-0

· Ideally suited for use in very high frequency switching

power supplies, inverters and as free wheeling diodes

· Glass passivated chip junction

· High temperature soldering guaranteed: 250℃/10

seconds, at terminals

0.124(3.15)

0.108(2.75)

0.245(6.22)

0.220(5.59)

0.280(7.11)

0.260(6.60)

0.012(0.31)

0.006(0.15)

0.103(2.62)

0.079(2.00)

Mechanical Data

0.008(0.203)

MAX.

· Case : JEDEC SMC(DO-214AB) molded plastic body

· Terminals : Plated axial lead solderable per

MIL-STD-750, method 2026

· Polarity : Color band denotes cathode end

· Mounting Position : Any

· Weight : 0.007 ounce, 0.25 gram

0.050(1.27)

0.030(0.76)

0.320(8.13)

0.305(7.75)

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

ES3A

ES3B

ES3C

ES3D

ES3G

ES3J

Units

Maximum recurrent peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

150

105

150

200

140

200

400

280

400

600

420

600

Volts

Maximum DC blocking voltage

100

Maximum average forward rectified current

at TL=100℃

I(AV)

3.0

Amps

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method) at TL=100℃

FSM

100.0

Amps

Volts

μA

Maximum instantaneous forward voltage

at 3.0A

0.95

500

1.25

350

=25℃

10.0

Maximum reverse

current at rated voltage

A=100℃

Trr

Maximum reverse recovery time (Note 1)

Typical thermal resistance (Note 3)

Typical junction capacitance (Note 2)

RθJL

RθJA

12.0

47.0

℃/W

45.0

30.0

Operating junction and storage

temperature range

℃

-55 to +150

TSTG

Notes:

(1) Test conditions: I

(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

(3) Units mounted on P.C.B 0.31×0.31"(0.8×0.8mm) copper pad areas

F=0.5A, IR=1.0A, Irr=0.25A.

RATINGS AND CHARACTERISTIC CURVES ES3A THRU ES3J

FIG.2-MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

FIG.1-FORWARD CURRENT DERATING CURVE

3.0

RESISTIVE OR INDUCTIVE LOAD

0.31X0.31"(8.0X8.0mm)

COPPER PAD AREAS

150

125

8.3ms SINGLE HALF SINE WAVE

(JEDEC Method) at TL=120℃

2.0

100

1.0

NUMBER OF CYCLES AT 60Hz

100

110

120

130

140

150

LEAD TEMPERATURE (℃)

FIG.3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG.4-TYPICAL REVERSE CHARACTERISTICS

100

1000

100

TJ=125℃

0.1

TJ=25℃

=75℃

PULSE WIDTH=300

1% DUTY CYCLE

µS

=25℃

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

0.01

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FIG.5-TYPICAL JUNCTION CAPACITANCE

105

TJ=25℃

f=1.0MHz

Vsig=50mVp-P

0.1

100

REVERSE VOLTAGE.VOLTS

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