FP1601 [DAESAN]

CURRENT 16.0 Amperes VOLTAGE 50 to 1000 Volts; 当前16.0安培电压50到1000伏特


型号：	FP1601
厂家：	DAESAN ELECTRONICS CORP.
描述：	CURRENT 16.0 Amperes VOLTAGE 50 to 1000 Volts 当前16.0安培电压50到1000伏特
文件：	总2页 (文件大小：313K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CURRENT 16.0 Amperes

VOLTAGE 50 to 1000 Volts

FP1601 THRU FP1607

Features

· Fast switching

· Low leakage

ITO-220

· Low forward voltage drop

· High current capability

· High current surge

· High reliability

0.2

0.1

0.2

4.5

0.5

3.2

0.2

2.7

0.2

1.3

0.2

Mechanical Data

0.7

2.54

0.5

2.4

0.2

2.54

· Case : JEDEC ITO-220 molded plastic body

· Terminals : Lead solderable per

MIL-STD-750, method 2026

· Polarity : As marked

PIN 1

PIN 3

PIN 1

PIN 3

CASE

PIN 2

CASE

PIN 2

Negative CT

Suffix "A"

Positive CT

Suffix "C"

· Mounting Position : Any

· Weight : 0.08 ounce, 2.24 gram

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

Units

1601 1602 1603 1604 1605 1606 1607

Maximum recurrent peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

See Fig. 1

Amps

(AV)

16.0

150

1.3

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

FSM

Maximum instantaneous forward voltage

at 8.0A

Volts

=25℃

Maximum DC reverse current

at rated DC blocking voltage

μA

=125℃

100

Maximum reverse recovery time (Note 1)

Typical thermal resistance (Note 2)

Trr

RθJC

150

250

500

℃/W

℃

5.0

Operating junction and storage

temperature range

-55 to +150

STG

Notes:

(1) Test conditions: I

F=0.5A, IR=1.0A, Irr=0.25A.

(3) Thermal resistance from junction to case mounted on heatsink.

RATINGS AND CHARACTERISTIC CURVES FP1601 THRU FP1607

FIG . -REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50 10

trr

NONINDUCTIVE

+0.5A

DUT

(+ )

PULSE

GENERATOR

( NOTE 2 )

50Vdc

(approx)

(-)

-0.25A

OSCILLOSCOPE

(NOTE 1 )

NONINDUCTIVE

NOTES: 1 . RISE TIME = 7nsmax. INPUT

IMPEDANCE= 1 MEGOHM 22pf

2 . RISETIME = 10ns max.SOURSE

IMPEDANCE = 50ohmsf

-1.0A

1cm

SET TIME BASE FOR

5/ 10ns / cm

FIG . 2- MAXIMUM FORWARD CURRENT DERATING CURVE

FIG . 3 -TYPICAL REVERSE CHARACTERISTICS

1000

20.0

16.0

12.0

8.0

100

Tj=125^OC

4.0

1.0

0.1

100

150

Tj=25^OC

LEAD TEMPERATURE. (^OC )

FIG .4 - MAXIMUM NON - REPETITIVE FORWARD

SURGE CURRENT

300

250

200

60 80

100 120 140

PERCENT OF RATED PEAK REVERSE

VOLTAGE. (% )

8.3ms Single Half Sine

150

100

Method

JEDEC

Wave

FIG . 6 -TYPICAL INSTANTANEOUS

FORWARD CARACTERISTICS

1 00

NUMBER OF CYCLES AT 60Hz

FIG .5 - TYPICAL JUNCTION CAPACITANCE PER LEG

120

100

1.0

Tj=25^OC

f = 1.0MHz

Tj=25^OC

Pulse Width=300

1% Duty Cycle

Vsig = 50mVp-p

1.0 1.1 1.2

1.3 1.4 1.5

0.1

0.5 1.0

50 100

500 1000

INSTANTANEOUS FORWARD VOLTAGE .( A)

REVERSE VOLTAGE . ( V)

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