HER308G [DAESAN]
CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts; 当前3.0安培电压50到1000伏特
| 型号： | HER308G |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
HER301G THRU HER308G
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
· Low forward voltage drop
· High current capability
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
· High reliability
· Low power loss, high effciency
· Glass passivated junction
· High speed switching
1.0(25.4)
MIN.
· Low leakage
0.375(9.5)
0.285(7.2)
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Epoxy : UL94V-0 rate flame retardant
· Lead : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
1.0(25.4)
MIN.
0.042(1.1)
0.037(0.9)
DIA.
· Weight : 0.042 ounce, 1.19 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
HER HER HER HER HER HER
Symbols
HER HER
Units
301G 302G 303G 304G 305G 306G 307G 308G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
Maximum DC blocking voltage
V
DC
100
1000
Maximum average forward rectified current
0.375"(9.5mm) lead length @ at TA=55℃
Amps
Amps
Volts
I
(AV)
3.0
100
1.3
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum instantaneous forward voltage
at 2.0A
V
F
1.0
1.7
Maximum DC reverse current at rated DC
10.0
200
blocking voltage TA=25℃
μA
IR
Maximum DC reverse current at rated DC
blocking voltage T =125℃
A
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Trr
50
70
75
50
ns
CJ
pF
Operating junction and storage
temperature range
T
J
℃
-65 to +150
TSTG
Notes:
(1) Test conditions: I
F=0.5A, IR=1.0A, Irr=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
RATINGS AND CHARACTERISTIC CURVES HER301G THRU HER308G
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
6.0
50Ω
NON INDUCTIVE
10Ω
NON INDUCTIVE
Trr
+0.5A
5.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
4.0
( + )
0.375"(9.5mm) LEAD LENGTH
D.U.T.
PULSE
GENERATOR
(NOTE2)
0
50Vdc
(APPROX)
3.0
-0.25A
(
)
1Ω
OSCILLOSCOPE
(NOTE1)
2.0
NON IN-
DUCTIVE
1.0
0
-1.0A
NOTES : 1.Rise Time=7ns max. input impedance=1
megohm 22pF
1cm
2.Rise Time=10ns max. source impedance
= 50 ohms
SET TIME BASE FOR 20/30 ns/cm
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( ℃)
FIG.3-TYPICAL FORWARD CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
10
1000
TA=125℃
100
10
1
0.1
TA=25℃
1.0
0.1
0.01
TA=25℃
PULSE WIDTH=300
1% DUTY CYCLE
µS
0
20
40
60
80
100
120
140
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
FIG6-TYPICAL JUNCTION CAPACITANCE
175
150
175
150
TA=25℃
8.3m SINGLE HALF SINE WAVE
(JEDEC Method)
125
100
75
125
100
HER301G-HER306G
75
TJ=25℃
50
25
5
50
25
HER307G-HER308G
1
5
10
50
100
0
0.1
0.5
1
2
5
10 20
100 200
1000
50
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
相关型号：
HER308G-BP
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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