HER308G-K [TSC]

3A, 50V - 1000V Glass Passivated High Efficient Rectifier;


型号：	HER308G-K
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	3A, 50V - 1000V Glass Passivated High Efficient Rectifier
文件：	总7页 (文件大小：432K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HER301G-K - HER308G-K

Taiwan Semiconductor

3A, 50V - 1000V Glass Passivated High Efficient Rectifier

FEATURES

KEY PARAMETERS

● Glass passivated chip junction

● High current capability, Low V_F

● High reliability

PARAMETER

I_F(AV)

V_RRM

VALUE

UNIT

50 - 1000

150

● High surge current capability

● Low power loss, high efficiency

● Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

T_{J MAX}

°C

Package

Configuration

DO-201AD

Single die

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● TV

● Monitor

MECHANICAL DATA

● Case: DO-201AD

● Molding compound meets UL 94V-0 flammability rating

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: As marked

● Weight: 1.1 g (approximately)

DO-201AD

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

HER HER HER HER HER HER HER HER

PARAMETER

SYMBOL

301

302

303

304

305

306

307

308 UNIT

G-K

HER

G-K

HER

G-K

HER

G-K

HER

G-K

HER

G-K

HER

G-K

HER

G-K

HER

Marking code on the device

301G 302G 303G 304G 305G 306G 307G 308G

Repetitive peak reverse voltage

Reverse voltage, total rms value

Forward current

V_RRM

V_R(RMS)

I_F(AV)

100

200

140

300

210

400

280

600

420

800

560

1000

700

Surge peak forward current, 8.3

ms single half sine-wave

superimposed on rated load per

diode

I_FSM

125

Junction temperature

Storage temperature

T_J

- 55 to +150

°C

T_STG

Version:B1706

HER301G-K - HER308G-K

Taiwan Semiconductor

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-lead thermal resistance per diode

R_ӨJL

°C/W

Junction-to-ambient thermal resistance per diode

R_ӨJA

°C/W

ELECTRICAL SPECIFICATIONS (T_A= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

HER301G-K

HER302G-K

HER303G-K

HER304G-K

HER305G-K

1.0

Forward voltage per diode ⁽¹⁾

I_F=3A, T_J=25°C

V_F

1.3

1.7

HER306G-K

HER307G-K

HER308G-K

µA

T_J= 25°C

Reverse current @ rated V_Rper diode ⁽²⁾

I_R

200

T_J= 125°C

HER301G-K

HER302G-K

HER303G-K

HER304G-K

HER305G-K

HER306G-K

Junction capacitance

1 MHz, V_R=4V

C_J

HER307G-K

HER308G-K

HER301G-K

HER302G-K

HER303G-K

HER304G-K

HER305G-K

HER306G-K

I_F=0.5A, I_R=1.0A

I_RR=0.25A

Reverse recovery time

t_rr

HER307G-K

HER308G-K

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

Version:B1706

HER301G-K - HER308G-K

Taiwan Semiconductor

ORDERING INFORMATION

PACKING CODE

SUFFIX

PART NO.

PACKING CODE

PACKAGE

PACKING

DO-201AD

500 / Ammo box

1,250 / 13" Paper reel

500 / Bulk packing

HER30xG-K

(Note 1, 2)

Notes:

1. "x" defines voltage from 50V (HER301G-K) to 1000V (HER308G-K)

2. Whole series with green compound (halogen-free)

EXAMPLE P/N

PACKING CODE

EXAMPLE P/N

PART NO.

PACKING CODE

DESCRIPTION

SUFFIX

Green compound

HER301G-K A0G

HER301G-K

Version:B1706

HER301G-K - HER308G-K

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

Fig.1 Forward Current Derating Curve

Fig.2 Typical Junction Capacitance

175

150

125

100

HER301G-K -HER305G-K

RESISTIVE OR

INDUCTIVE LOAD

HER306G-K - HER308G-K

100

125

150

175

0.1

100

CASE TEMPERATURE (^oC)

REVERSE VOLTAGE (V)

Fig.3 Typical Reverse Characteristics

Fig.4 Typical Forward Characteristics

1000

100

T_J=125°C

100

HER301G-K - HER304G-K

HER305G-K

T_J=75°C

HER306G-K - HER308G-K

0.1

0.01

T_J=25°C

0.1

100

120

140

0.2

0.4

0.6

0.8

1.2

1.4

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FORWARD VOLTAGE (V)

Version:B1706

HER301G-K - HER308G-K

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

Fig.5 Maximum Non-repetitive Forward Surge Current

150

8.3ms Single Half Sine Wave

125

100

1000

NUMBER OF CYCLES AT 60 Hz

Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram

Version:B1706

HER301G-K - HER308G-K

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

DO-201AD

Unit (mm)

Unit (inch)

DIM.

Min

5.00

Max

Min

Max

0.220

0.052

5.60

1.30

0.197

0.048

1.000

0.335

1.000

1.20

25.40

8.50

9.50

0.375

25.40

MARKING DIAGRAM

P/N

=Marking Code

=Green Compound

=Date Code

YWW

=Factory Code

Version:B1706

HER301G-K - HER308G-K

Taiwan Semiconductor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Version:B1706

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