S2B [DAESAN]

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts; 当前2.0安培电压50到1000伏特


型号：	S2B
厂家：	DAESAN ELECTRONICS CORP.
描述：	CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts 当前2.0安培电压50到1000伏特
文件：	总2页 (文件大小：334K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CURRENT 2.0 Amperes

VOLTAGE 50 to 1000 Volts

S2A THRU S2M

Features

· For surface mounted applications

· Glass passivated junction

· Low profile package

DO-214AA (SMB)

· Builtoin strain relief, ideal for automated placement

· Plastic package has Unerwrites Laboratory

Flammability Classification 94V-0

· High temperature soldering guaranteed: 350℃/10

second, at terminals

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

0.185(4.70)

0.160(4.06)

0.012(0.31)

0.006(0.15)

Mechanical Data

0.096(2.44)

0.083(2.13)

· Case : JEDEC SMB(DO-214AA) molded plastic body

· Terminals : Plated axial lead solderable per

MIL-STD-750, method 2026

0.008(0.203)

MAX.

0.050(1.27)

0.030(0.76)

· Polarity : Color band denotes cathode end

· Mounting Position : Any

· Weight : 0.003 ounce, 0.093 gram

0.220(5.59)

0.200(5.08)

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

S2A

S2B

S2D

S2G

S2J

S2K

S2M

Units

Maximum recurrent peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

L=100℃

(AV)

2.0

50.0

1.15

Amps

Volts

μA

at T

Peak forward surge current 8.3ms half sing

wave superimposed on rated load

(JEDEC method) T =100℃

IFSM

Maximum instantaneous forward voltage

at 2.0A

=25℃

1.0

Maximum reverse

current at rated voltage

=125℃

125

RθJL

RθJA

16.0

53.0

Typical thermal resistance (Note 2)

℃/W

trr

Typical reverse capacitance (Note 3)

Typical junction capacitance (Note 1)

2.0

μS

℃

30.0

Operating and Storage temperature Range

-55 to +150

TSTG

Notes:

(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.

(2) Thermal resistance from junction to ambient and from junction to lead mounted on 0.2×0.2"(0.5×0.5mm)

copper opad areas.

(3) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A

RATINGS AND CHARACTERISTIC CURVES S2A THRU S2M

FIG.1-FORWARD CURRENT DERATING CURVE

FIG.2-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

1.5

1.0

60Hz RESISTIVE OR

INDUCTIVE LOAD

0.27X0.27"(7.0X7.0MM)

COPPER PAD AREAS

0.5

TJ=25℃

PULSE WIDTH=300µS

1% DUTY CYCLE

100 110 120 130 140 150

0.1

LEAD TEMPERATURE (℃)

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

FIG.3-MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

TJ=100℃

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

FIG.4-TYPICAL REVERSE CHARACTERISTICS

TJ=125℃

1.0

0.1

NUMBER OF CYCLES AT 60Hz

100

=100℃

FIG.5-TYPICAL JUNCTION CAPACITANCE

0.01

100

TJ=25℃

f=1.0MHz

Vsig=50mVp-p

0.001

100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

0.01

0.1

100

REVERSE VOLTAGE.VOLTS

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