SB150 [DAESAN]
CURRENT 1.0Ampere VOLTAGE 20 to 100 Volts; 电流1.0安培电压20至100伏特型号: | SB150 |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | CURRENT 1.0Ampere VOLTAGE 20 to 100 Volts |
文件: | 总2页 (文件大小:356K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CURRENT 1.0Ampere
VOLTAGE 20 to 100 Volts
SB120 THRU SB1100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
DO-41
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals,
0.205(5.2)
0.166(4.2)
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
Mechanical Data
1.0(25.4)
MIN.
· Case : JEDEC DO-41 molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
0.034(0.9)
0.028(0.7)
DIA.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SB130
30
SB160
60
Symbols
SB120
20
SB140 SB150
SB180 SB1100 Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
RRM
RMS
40
28
40
50
35
50
80
56
80
100
70
Volts
Volts
Volts
14
21
42
Maximum DC blocking voltage
V
DC
20
30
60
100
Maximum average forward rectified
current 0.375"(9.5mm) lead length(see Fig. 1)
I(AV
)
1.0
Amp
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
I
FSM
40.0
Amps
Volts
Maximum instantaneous forward voltage
at 1.0A (Note 1)
V
F
0.55
0.70
0.75
0.83
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
A
=25℃
0.5
10
IR
mA
=100℃
Typical junction capacitance (Note 3)
Typical thermal resistance (Note 2)
C
J
110
PF
RθJA
RθJL
50.0
15.0
℃/W
℃
℃
Operating junction temperature range
Storage temperature range
Notes:
T
J
-65 to +125
-65 to +150
T
STG
-65 to +150
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to ambient P.C.B. mounted, with 1.5X1.5"(38X38mm) copper pads
(3) Measured 1.0MHz and reverse voltage of 4.0 volts
RATINGS AND CHARACTERISTIC CURVES SB120 THRU SB1100
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FIG.1-FORWARD CURRENT DERATING CURVE
FORWARD SURGE CURRENT
1
0.75
0.5
50
TJ=TJ MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
40
30
20
10
0
SB150-SB1100
SB120-SB140
0.25
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (℃)
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
50
100
── SB120-SB140
- - - SB150-SB1100
10
10
TJ=125℃
TJ=150℃
PULSE WIDTH=300
1% DUTY CYCLE
㎲
TJ=125℃
1.0
0
1
TJ
=75℃
TJ=25℃
0.1
── SB120-SB140
- - - SB150-SB1100
0.01
TJ=25℃
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
400
TJ=25℃
f=1.0MHz
10
Vsig=50mVp-p
100
10
1
── SB120-SB140
- - - SB150-SB1100
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE.VOLTS
T, PULSE DURATION, sec.
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