SF51 [DAESAN]

CURRENT 5.0 Amperes VOLTAGE 50 to 600 Volts; 当前5.0安培电压50至600伏
SF51
型号: SF51
厂家: DAESAN ELECTRONICS CORP.    DAESAN ELECTRONICS CORP.
描述:

CURRENT 5.0 Amperes VOLTAGE 50 to 600 Volts
当前5.0安培电压50至600伏

二极管 超快速恢复二极管
文件: 总2页 (文件大小:299K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CURRENT 5.0 Amperes  
VOLTAGE 50 to 600 Volts  
SF51 THRU SF57  
Features  
· Low forward voltage drop  
· High current capability  
· High reliability  
DO-201AD  
· High surge current capability  
· Super fast recovery time  
0.210(5.3)  
· Good for use in switching mode circuits  
· Plastic package has Underwrites Laboratory Flammability  
Classification 94V-0  
0.188(4.8)  
DIA.  
1.0(25.4)  
MIN.  
0.375(9.5)  
0.285(7.2)  
Mechanical Data  
· Case : JEDEC DO-201AD molded plastic body  
· Terminals : Plated axial lead solderable per MIL-STD-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
1.0(25.4)  
MIN.  
0.042(1.1)  
0.037(0.9)  
DIA.  
· Weight : 0.042 ounce, 1.18 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
Units  
Symbols  
SF51 SF52 SF53 SF54 SF55 SF56 SF57  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
100  
Maximum average forward rectified current  
0.375"(9.5mm) lead length at TA=55℃  
I
(AV)  
5.0  
Amps  
Amps  
Volts  
Peak forward surge current 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
150  
Maximum instantaneous forward voltage  
at 5.0A  
1.25  
1.50  
VF  
0.95  
Maximum DC reverse  
current at rated DC  
blocking voltage  
T
T
A
=25℃  
10.0  
I
R
μA  
A=100℃  
100  
35  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Trr  
ns  
C
J
50  
pF  
Operating junction and storage  
temperature range  
T
J
-55 to +150  
TSTG  
Notes:  
(1) Test conditions: I  
F=0.5A, IR=1.0A, Irr=0.25A.  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  
RATINGS AND CHARACTERISTIC CURVES SF51 THRU SF57  
FIG.2-TYPICAL FORWARD CURRENT  
DERATING CURVE  
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC  
trr  
50  
10  
NONINDUCTIVE  
NONINDUCTIVE  
|
|
|
|
|
|
|
|
+0.5A  
6
5
4
3
( )  
(+)  
25Vdc  
(approx.)  
0
D.U.T.  
PULSE  
GENERATOR  
(NOTE 2)  
-0.25A  
SinglePhase  
HalfWave 60Hz  
Resistive OrInductive Load  
0.375"(9.5mm)LeadLength  
( )  
(+)  
1W  
OSCILLISCOPE(NOTE 1)  
NON-  
INDUCTIVE  
2
1
0
-1.0A  
NOTES: 1. RiseTime= 7ns max., InputImpedance= 1 megohm.22pF.  
2. RiseTime= 10nsmax., SourceImpedance= 50 ohms.  
1cm  
0
25  
50  
75  
100  
125  
150  
175  
SET TIME BASE FOR  
AMBIENT TEMPERATURE,(oC)  
50 / 10ns/ cm  
FIG.3-TYPICAL FORWARDCHARACTERISTICS  
50  
FIG.4-TYPICAL REVERSECHARACTERISTICS  
50  
10  
3.0  
1.0  
10  
3.0  
1.0  
Tj=100 C  
Tj=25 C  
Tj= 25  
C
Pu lse W idth 30 0u s  
1% Du ty Cy cle  
0.1  
.01  
0.1  
0
20  
40  
60  
80 10 0 12 0 14 0  
.4  
.6  
.8  
1. 0 1. 2 1. 4 1. 6  
1. 8  
FORWARD VOLTAGE,(V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)  
FIG.5-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT  
FIG.6-TYPICAL JUNCTION CAPACITANCE  
175  
150  
120  
90  
60  
30  
0
150  
125  
100  
75  
8.3msSingleHalf  
Tj=25 C  
Sine Wave  
JEDEC method  
50  
25  
0
.01  
1
5
10  
50  
100  
.05 .1  
.5  
1
5
10  
50 100  
NUMBER OF CYCLES AT 60Hz  
REVERSE VOLTAGE,(V)  

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