DB102 [DCCOM]

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER; 单相硅桥式整流器技术规格
DB102
型号: DB102
厂家: DC COMPONENTS    DC COMPONENTS
描述:

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
单相硅桥式整流器技术规格

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DB101  
THRU  
DC COMPONENTS CO., LTD.  
RECTIFIER SPECIALISTS  
R
DB107  
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE - 50 to 1000 Volts  
CURRENT - 1.0 Ampere  
FEATURES  
* Good for automation insertion  
* Surge overload rating - 50 Amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction  
* Glass passivated junction  
DB-1  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: MIL-STD-202E, Method 208 guaranteed  
* Polarity: Symbols molded or marked on body  
* Mounting position: Any  
* Weight: 0.4 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
SYMBOL  
DB101  
50  
DB102  
100  
DB103  
200  
DB104  
400  
DB105  
600  
DB106  
800  
DB107 UNITS  
V
RRM  
RMS  
1000  
700  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
35  
70  
140  
280  
420  
560  
Maximum DC Blocking Voltage  
V
DC  
50  
100  
200  
400  
1.0  
600  
800  
1000  
Volts  
Maximum Average Forward Output Current at T  
A
= 40oC  
I
O
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
I
FSM  
50  
Amps  
Volts  
V
F
1.1  
10  
Maximum Forward Voltage Drop per element at 1.0A DC  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage per element  
@T  
A
A
= 25oC  
= 125oC  
I
R
uAmps  
@T  
500  
I2t Rating for Fusing (t<8.3ms)  
I2t  
10  
25  
A2Sec  
pF  
0C/W  
Typical Junction Capacitance ( Note1)  
Typical Thermal Resistance (Note 2)  
Operating and Storage Temperature Range  
CJ  
RθJ A  
40  
T
J,TSTG  
-65 to + 150  
0C  
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts  
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.  
184  
EXIT  
NEXT  
RATING AND CHARACTERISTIC CURVES (DB101 THRU DB107)  
DC COMPONENTS CO., LTD.  
R
EXIT  
BACK  
NEXT  
185  

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