DEI1066 [DEIAZ]

OCTAL GND/OPEN INPUT, SERIAL OUTPUT INTERFACE IC;
DEI1066
型号: DEI1066
厂家: Device Engineering Incorporated    Device Engineering Incorporated
描述:

OCTAL GND/OPEN INPUT, SERIAL OUTPUT INTERFACE IC

输入元件 输出元件
文件: 总11页 (文件大小:287K)
中文:  中文翻译
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Device  
Engineering  
Incorporated  
DEI1066  
OCTAL GND/OPEN INPUT, SERIAL  
OUTPUT INTERFACE IC  
385 East Alamo Drive  
Chandler, AZ 85225  
Phone: (480) 303-0822  
Fax: (480) 303-0824  
E-mail: admin@deiaz.com  
FEATURES  
·
Eight GND/OPEN discrete inputs  
o
o
o
o
o
Meet electrical requirements for ABD0100F GND/OPEN discrete input.  
Hysteresis provides noise immunity  
Internal pull up resistor with 1mA source current to prevent dry relay contacts.  
Internal isolation diode  
Inputs protected from Lightning Induced Transients per DO160D, Section 22, Cat A3 and B3.  
·
3-wire serial interface (/CS, CLK, DO)  
o
o
o
o
Direct interface to Serial Peripheral Interface (SPI) port.  
TTL/CMOS compatible inputs and Tristate output  
10MHz Data Rate  
Serial input to expand Shift Register  
·
·
·
Logic Supply Voltage (VCC):  
Analog Supply Voltage (VDD):  
16L NB SOIC package  
3.3V or 5V  
5V to 18V  
PIN ASSIGNMENTS  
1
16  
VDD  
GND  
VCC  
GND  
SDIN  
/CS  
DIN1  
DIN2  
DIN3  
DIN4  
DIN5  
DIN6  
DIN7  
DIN8  
DEI1066  
SCLK  
DOUT  
Figure 1 DEI1066 Pin Assignment  
©2018 Device Engineering, Inc.  
Page 1 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
GENERAL DESCRIPTION  
The DEI1066 is an eight-channel discrete-to digital interface BICMOS device. It senses eight Ground/Open discrete signals of  
the type commonly found in avionic systems. The data is read from the device via an eight-bit serial shift register with 3-state  
output implemented as a Serial Peripheral Interface (SPI) bus, Mode 0 slave.  
Table 1 Pin Descriptions  
Pins  
Name  
Description  
8-1  
DIN[8:1]  
Parallel data inputs. Eight Ground/Open format discrete signals. These  
have an internal pull-up to VDD. The logic threshold and hysteresis  
characteristics are determined by the applied VDD voltage.  
Serial data output. This pin is the output from the last stage of the shift  
register. This is a 3-state output.  
Serial Shift Clock. A low-to-high transition on this input shifts data on  
the serial data input into the shift register and data in stage 8 is shifted out  
DOUT, being replaced by the data previously stored in stage 7.  
Chip Select. A high-to-low transition on this input loads data from the  
parallel DIN[8:1] inputs into the shift register. A low level on this input  
enables the DOUT 3-state output and the shift register. A high level on  
this input forces DOUT to the high impedance state and disables the shift  
register so SCLK transitions have no effect.  
9
DOUT  
SCLK  
10  
11  
12  
/CS  
SDIN  
Serial Data Input. Data on this input is shifted into the shift register on  
the rising edge of the SCLK input if the /CS input is low. This input has  
an internal pull-down resistor to GND.  
13  
14  
15  
16  
GND  
VCC  
GND  
VDD  
Logic Ground.  
Logic Supply Voltage.  
Analog Ground.  
Analog Supply Voltage.  
SDIN  
SDIN  
DI1  
DI2  
DI3  
DI4  
DI5  
DI6  
DI7  
DI8  
DIN1  
DIN2  
DIN3  
DIN4  
DIN5  
DIN6  
DIN7  
DIN8  
INPUT RESISTORS,  
COMPARATORS,  
FILTERING, AND  
LIGHTNING  
PROTECTION  
(8 CHANNELS)  
Q8  
DOUT  
SHIFT REG  
SCK  
SCLK  
/CS  
SH/LD  
Figure 2 DEI1066 LOGIC DIAGRAM  
©2018 Device Engineering, Inc.  
Page 2 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
DIN[8:1] Inputs  
Each discrete input consists of the circuit shown in Figure 3. Each DINn signal is conditioned by the resistor / diode network  
and presented to the comparator IN+. The comparator IN-, and therefore the switching threshold, is developed from the Vdd  
supply voltage. It includes positive feedback from the comparator output to provide hysteresis. Some notable features are:  
·
The comparator includes an RC filter to provide noise rejection of transient pulses of up to several us. Thus, there is a  
relatively large DINx setup time. (Refer to timing parameter tsu2).  
·
The inputs can withstand continuous input voltages of 40V minimum. The isolation diode breakdown voltage is  
greater than 50V. The 12K Ohm input resistor is designed to limit diode breakdown current to safe levels during  
transient events.  
Vdd  
Comparator  
Vdd  
with RC filter  
R2  
3K  
R1  
12K  
D1  
+
-
DINn  
Vout  
(to Shift  
Reg)  
Vdd  
R3  
500  
R4  
50K  
Figure 3 DINn Input Circuit  
Q1  
R5  
80K  
Table 2 Truth Table  
/CS  
1
SCLK  
X
X
SDIN  
X
X
DIN[8:1]  
SREG Q1  
X
DIN1  
DOUT  
HI-Z  
Enabled  
DIN8  
X
Sampled into Shift  
Register  
0
0
0
0
1
X
X
X
X
X
X
0
1
SREG Q8  
SREG Q8  
No Change  
No Change  
No Change  
X
Disabled to HI-Z  
©2018 Device Engineering, Inc.  
Page 3 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
Serial Interface and Shift Register  
The DEI1066 digital interface is an 8-Bit Serial or Parallel-Input / Serial-Output Shift Register with 3-State Output. The  
control inputs to the shift register are connected as shown in Figure 2 to implement an SPI compatible bus consisting of /CS,  
SCLK, DOUT, and SDIN. The Figure 4 waveform depicts a typical 8-Bit read cycle where the 8 DIN signals are read on to  
the serial bus. The Figure 5 waveform demonstrates a daisy-chain application where a 16-Bit read cycle includes the serial  
data passed through from the SDIN input.  
/CS  
X
SCLK  
X
VALID  
X
X
DIN[8:1]  
X
X
SDIN  
DIN8  
DIN7  
DIN6  
DIN5  
DIN4  
DIN3  
DIN2  
DIN1  
DOUT  
DIN inputs latched in S-Reg  
Figure 4 Serial Bus Read Cycle, 8 Bit  
/CS  
SCLK  
X
X
VALID  
X
X
DIN[8:1]  
SI8  
SI7  
SI6  
SI5  
SI4  
SI3  
SI2  
SI1  
X
X
SDIN  
DIN8  
DIN7  
DIN6  
DIN5  
DIN4  
DIN3  
DIN2  
DIN1  
SI8  
SI7  
SI6  
SI5  
SI4  
SI3  
SI2  
SI1  
DOUT  
Figure 5 Serial Bus Read Cycle, 16 Bit Daisy Chain  
©2018 Device Engineering, Inc.  
Page 4 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
Lightning Protection  
DINn inputs are designed to survive lightning induced transients as defined by RTCA DO160D, Section 22, Cat A3 and B3,  
Waveforms 3, 4, and 5A, Level 3. See waveforms below.  
V
V/I  
Peak  
25% to 75%  
of Largest Peak  
T1 = 6.4us  
T2 = 70us  
50%  
0
t
50%  
F = 1MHZ and 10MHZ  
0
t
T1  
T2  
Figure 6 Voltage / Current Waveform 3  
Figure 7 Current / Voltage Waveform 4  
V/I  
Peak  
T1=40us  
T2=120us  
Waveform Source Impedance characteristics:  
·
·
·
Waveform 3 Voc/Isc = 600V / 24A => 25 Ohms  
Waveform 4 Voc/Isc = 300 V / 60 A => 5 Ohms  
Waveform 5A Voc / Isc = 300V / 300A => 1 Ohm  
50%  
0
t
T1  
T2  
Figure 8 Current / Voltage Waveform 5A  
©2018 Device Engineering, Inc.  
Page 5 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
ELECTRICAL CHARACTERISTICS  
Table 3 Absolute Maximum Ratings  
PARAMETER  
MIN  
-0.3  
-0.3  
MAX  
+7.0  
20  
UNITS  
VCC Supply Voltage  
VDD Supply Voltage  
V
V
Input Voltage  
DIN[8:1]  
Continuous  
DO160D, Waveform 3, Level 3  
DO160D, Waveform 4 and 5, Level 3  
-5  
+40  
+600  
+300  
V
V
V
V
V
-600  
-300  
-1.5  
-0.5  
Logic Inputs  
DOUT  
VCC + 1.5  
VCC + 0.5  
Power Dissipation @ 85 °C: (> 10 Sec)  
16 Lead SOIC  
0.8  
W
Operating Temperature  
-55  
-65  
+125  
°C  
+150  
°C  
°C  
Storage Temperature  
Junction Temperature  
Tjmax  
145  
ESD per JEDEC A114-A Human Body Model  
Logic and Supply pins  
DIN pins  
2000  
1000  
V
Notes:  
1. Stresses above absolute maximum ratings may cause permanent damage to the device.  
2. Voltages referenced to Ground  
Table 4 Recommended Operating Conditions  
PARAMETER  
Supply Voltage  
SYMBOL  
CONDITIONS  
VCC  
VDD  
5.0V±10%, 3.3V±10%  
5.0 to 18V  
Logic Inputs and Outputs  
Discrete Inputs  
0 to VCC  
DIN[8:1]  
Top  
0 to 40V  
Operating Temperature  
-SES  
-SMx  
-55 to +85 ºC  
-55 to +125 ºC  
©2018 Device Engineering, Inc.  
Page 6 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
Table 5 DC Characteristics  
Symbol  
Parameter  
Conditions (1) (2)  
LIMITS  
Max  
Unit  
Min  
LOGIC INPUTS AND OUTPUTS  
VIH  
VIL  
HI level input voltage  
LO level input voltage  
2.0  
V
0.8  
V
VIhst  
Input hysteresis voltage,  
SCLK input  
(3)  
50  
mV  
VOH  
HI level output voltage  
Iout = -20uA  
VCC – 0.1  
V
Iout = -4.5mA,  
3.2  
3.0  
V
V
-55°C to +85°C  
-55°C to +125°C  
Iout = 20uA  
VOL  
LO level output voltage  
0.1  
Iout = 4.5mA,  
-55°C to +85°C  
-55°C to +125°C  
Vin = VCC or GND  
0.33  
0.4  
V
IIN  
Input leakage  
Logic inputs except SDIN:  
-55°C to +85°C  
-55°C to +125°C  
-1  
-2  
-2  
1
2
750  
uA  
uA  
SDIN:  
IOZ  
Max 3-state leakage current, Output in Hi Impedance state.  
DOUT  
Vout = VCC or GND  
-5  
-10  
5
10  
-55°C to +85°C  
-55°C to +125°C  
Cin  
Logic input pin Capacitance (3)  
10  
15  
pF  
pF  
Cout  
DOUT pin capacitance,  
output in HI-Z state  
(3)  
DISCRETE INPUTS  
VIH  
VIL  
VIhst  
IIH  
HI level input voltage  
LO level input voltage  
Input hysteresis voltage  
HI level input current  
VDD = 18V  
VDD = 5.0V  
VDD = 18V  
VDD = 5.0V  
VDD = 18V  
16.9  
4.16  
V
V
V
16.0  
3.7  
0.59  
0.18  
VDD = 5.0V  
DINn = 18V  
5
10  
-55°C to +85°C  
-55°C to +125°C  
DINn = 40V  
uA  
20  
40  
-55°C to +85°C  
-55°C to +125°C  
DINn = 0V  
IIL  
LO level input current  
VDD = 18V  
VDD = 5.0V  
SUPPLY VOLTAGES  
-1.0  
-0.25  
-1.6  
-0.5  
mA  
uA  
ICC  
Max quiescent logic supply Logic inputs = VCC or GND  
current DIN[8:1] = Open  
-55°C to +85°C  
-55°C to +125°C  
200  
400  
©2018 Device Engineering, Inc.  
Page 7 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
Symbol  
Parameter  
Conditions (1) (2)  
LIMITS  
Min Max  
Unit  
IDD  
Max quiescent analog  
supply current  
Logic Inputs = VCC or GND  
DIN[8:1] = Open  
11  
DIN[8:1] = GND  
mA  
23  
24  
-55°C to +85°C  
-55°C to +125°C  
Notes:  
1. Unless otherwise noted, Ta = rated temperature range. VCC = 3.0 to 5.5V. VDD = 5.0 to 18V.  
2. Current flowing into device is positive. Current flowing out of device is negative. Voltages are  
referenced to Ground.  
3. By design, not tested.  
Table 6 AC Electrical Characteristics  
Symbol  
Parameter  
Conditions  
(5)  
Limits  
Unit  
Min  
Max  
fMAX  
SCLK frequency. (50% duty cycle) (4)  
VCC = 3.0V  
VCC = 4.5V  
4.8  
24  
MHz  
Maximum usable SCLK frequency =  
1/(tp2 + tsu3)  
SCLK pulse width. (50% duty cycle)  
VCC = 3.0V  
VCC = 4.5V  
VCC = 3.0V  
VCC = 4.5V  
VCC = 3.0V  
VCC = 4.5V  
VCC = 3.0V  
VCC = 4.5V  
2.8  
10.7  
tW  
tsu1  
th1  
100  
20  
100  
50  
20  
20  
1
ns  
ns  
ns  
Setup time, SCLK low to /CS.  
Hold time, /CSto SCLK.  
tsu2  
th2  
tsu3  
Setup time, DIN valid to /CS.  
Hold time, /CSto DIN not valid.  
Setup time, SDIN valid to SCLK.  
(6)  
(6)  
35  
us  
us  
ns  
-1  
VCC = 3.0V  
VCC = 4.5V  
VCC = 3.0V  
VCC = 4.5V  
75  
20  
5
th3  
tp1  
tp2  
tp3  
tp4  
Hold time, SCLKto SDIN not valid.  
ns  
ns  
ns  
ns  
ns  
5
Propagation delay, /CSto DOUT valid. VCC = 3.0V  
250  
70  
250  
100  
200  
80  
(1)  
VCC = 4.5V  
VCC = 3.0V  
VCC = 4.5V  
Propagation delay, SCLKto DOUT  
valid. (1)  
Propagation delay, /CSto DOUT HI-Z. VCC = 3.0V  
(1) (2) (3)  
Delay time between /CS active.  
VCC = 4.5V  
VCC = 3.0V  
VCC = 4.5V  
25  
25  
Notes:  
1. DOUT loaded with 50pF to GND.  
2. DOUT loaded with 1K Ohms to GND for Hi output, 1K Ohms to VCC for Low output.  
3. Timing measured at 25%VCC for “0” to Hi-Z, 75%VCC for “1” to Hi-Z.  
4. By design, not tested  
5. Unless otherwise noted: Ta = rated temperature range. VCC = 3.0 to 5.5V. VDD = 5V. VIL = 0V. VIH = VCC.  
Timing measurement cursers at 50%VCC.  
6. tsu2 represents the maximum possible propagation delay through the input comparator. th2 represents the minimum  
possible propagation delay through the input comparator. The negative hold time denotes that DIN may change prior  
to /CSand still be valid data at the Shift Reg.  
©2018 Device Engineering, Inc.  
Page 8 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
/CS  
SCLK  
tp4  
th1  
tW  
tsu1  
1/fmax  
tsu2  
th2  
valid  
X
X
DIN[8:1]  
tsu3  
th3  
X
X
valid  
SDIN  
tp2  
tp1  
tp3  
DIN8  
DIN7  
DOUT  
Figure 9 Switching Waveforms  
DESIGN INFORMATION  
©2018 Device Engineering, Inc.  
Page 9 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
PACKAGE DESCRIPTION  
16L Narrow Body SOIC -G Package  
Table 7 Package Information  
16 Lead SOIC  
PACKAGE TYPE  
Narrow Body,  
Green  
REFERENCE  
16L SOIC NB G  
THERMAL RESISTANCE:  
qJA  
(4 layer PCB with  
Power Planes)  
~74 °C/W  
~30 °C/W  
qJC  
JEDEC MOISTURE  
SENSITIVITY LEVEL (MSL)  
MSL 1 / 260°C  
LEAD FINISH MATERIAL /  
JEDEC Pb-free CODE  
NiPdAu  
e4  
Pb-Free DESIGNATION  
JEDEC REFERENCE  
RoHS Compliant  
MS-012-AC  
Figure 10 Mechanical Outline, 16L SOIC NB G  
©2018 Device Engineering, Inc.  
Page 10 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  
ORDERING INFORMATION  
Table 8  
Package  
Part Number  
Marking  
Burn In  
Temperature  
DEI1066-SES-G  
DEI1066-SES  
16 SOIC NB G  
No  
-55 / +85 ºC  
E4  
DEI1066-SMS  
E4  
DEI1066-SMB  
E4  
DEI1066-SMS-G  
DEI1066-SMB-G  
16 SOIC NB G  
16 SOIC NB G  
No  
-55 / +125 ºC  
-55 / +125 ºC  
96hr / +125 ºC  
DEI reserves the right to make changes to any products or specifications herein. DEI makes no warranty, representation, or  
guarantee regarding suitability of its products for any particular purpose.  
©2018 Device Engineering, Inc.  
Page 11 of 11  
DS-MW-01066-01 Rev J  
04/18/2018  

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