AT25DF011-SSHNHR-T [DIALOG]
1-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory;型号: | AT25DF011-SSHNHR-T |
厂家: | Dialog Semiconductor |
描述: | 1-Mbit, 1.7V-3.6V Minimum SPI Serial Flash Memory |
文件: | 总3页 (文件大小:485K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Following the acquisi�on of Adesto Technologies, Dialog Semiconductor offers memory products as part of its
product porꢀolio. The exis�ng content from datasheets, including part numbers and codes should be used. Terms of
Purchase are provided on the Dialog website
https://www.dialog-semiconductor.com/general-terms-and-conditions-purchase
View our Dialog memory products porꢀolio:
www.dialog-semiconductor.com/products/memory
Contacting Dialog Semiconductor
United Kingdom (Headquarters)
Dialog Semiconductor (UK) LTD
Phone: +44 1793 757700
North America
Dialog Semiconductor Inc.
Phone: +1 408 845 8500
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#
Dialog Semiconductor B.V.
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AT25DF011
1-Mbit, 1.7V-3.6V Minimum
SPI Serial Flash Memory
DATASHEET (ADDENDUM)
High Temperature Operation (125°C)
This data sheet addendum is to be used in conjunction with the existing AT25DF011
datasheet specifications. The Adesto AT25DF011 1Mbit Serial Flash devices will
operate @ 125°C with the following datasheet caveats. All other parameters will meet
the existing datasheet specifications.
The ordering code suffix (CAN# Code) 'HR' or 'HT' must be used to ensure correct
operation at this extended temperature range. Adesto will not modify and republish the
current datasheet to reflect the CAN# ordering code or the above caveats.The
standard AT25DF011 datasheet is available at http://www.adestotech.com.
1.
Electrical Specifications
1.1
DC and AC Operating Range
AT25DF011-xxxHR
Operating Temperature
Endurance (Maximum)
-40C to +125C
20,000 Cycles
1.2
DC, AC, Program and Erase Characteristics
1.7V to 3.6V
2.3V to 3.6V
Symbol
IDPD
ISB
Parameter
Units
Min
Typ
Max
40
Min
Typ
8.5
25
Max
40
Deep Power-Down Current
Standby Current
5
µA
µA
25
12
60
60
ICC3
fRDLF
tPP
Active Current, Program Operation
Maximum Clock Frequency for 03h
Page Program Time (256 Bytes)
Page Erase Time
18
12
18
mA
MHz
ms
ms
ms
ms
ms
µs
25
25
1.8
8
7
1.8
7
5
tPE
25
25
Block Erase Time (4K)
Block Erase Time (32K)
Chip Erase Time
50
120
900
3600
50
120
700
2500
tBLKE
360
1400
12
300
1200
12
tCHPE
tBP
Byte Program Time
tCSH
Chip Select High Time
40
25
ns
DS-25DF011–052E–8/2017
2.
Ordering Code
2.1
Green Package Options (Pb/Halide-free/RoHS Compliant)
Max. Freq.
(MHz)
Ordering Code (1)
Package
Operating Voltage
Operation Range
AT25DF011-SSHNHR-T
AT25DF011-SSHNHR-B
AT25DF011-XMHNHR-T
AT25DF011-XMHNHR-B
AT25DF011-MAHNHR-T
AT25DF011-DWFHT (2)
8S1
Extended
8X
1.7V to 3.6V
104MHz
(-40°C to +125°C)
8MA3
DWF
1. The shipping carrier option code is not marked on the devices.
2. Contact Adesto for mechanical drawing or Die Sales information.
Package Type
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, Thin Shrink Small Outline Package
8X
8MA3
DWF
8-pad, 2 x 3 x 0.6mm, Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN)
Die in Wafer Form
3. Revision History
Revision Level – Release Date
History
A - September 2014
B - October 2014
C - January 2015
D - November 2015
E- August 2017
Initial release.
Updated AC and DC specifications.
Added DFN and wafer form ordering codes. Updated Vcc range.
Removed preliminary package note. Corrected units specification for Icc3 and tPE.
Updated corporate address information.
Corporate Office
California | USA
Adesto Headquarters
3600 Peterson Way
Sanat Clara, CA 95054
Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2015 Adesto Technologies. All rights reserved. / Rev.: DS-25DF011–052E–8/2017
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