AT45DB081E-UUN-T [DIALOG]
8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory;
| 型号： | AT45DB081E-UUN-T |
| 厂家： | 
Dialog Semiconductor |
| 描述： | 8-Mbit DataFlash (with Extra 256-kbits) 1.7 V Minimum SPI Serial Flash Memory 时钟 内存集成电路 |
| 文件： | 总79页 (文件大小：1340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Following the acquisi�on of Adesto Technologies, Dialog Semiconductor offers memory products as part of its
product porꢀolio. The exis�ng content from datasheets, including part numbers and codes should be used. Terms of
Purchase are provided on the Dialog website
https://www.dialog-semiconductor.com/general-terms-and-conditions-purchase
View our Dialog memory products porꢀolio:
www.dialog-semiconductor.com/products/memory
Contacting Dialog Semiconductor
United Kingdom (Headquarters)
Dialog Semiconductor (UK) LTD
Phone: +44 1793 757700
North America
Dialog Semiconductor Inc.
Phone: +1 408 845 8500
Hong Kong
Dialog Semiconductor Hong Kong
Phone: +852 2607 4271
China (Shenzhen)
Dialog Semiconductor China
Phone: +86 755 2981 3669
Germany
Japan
Korea
China (Shanghai)
Dialog Semiconductor GmbH
Phone: +49 7021 805-0
Dialog Semiconductor K. K.
Phone: +81 3 5769 5100
Dialog Semiconductor Korea
Phone: +82 2 3469 8200
Dialog Semiconductor China
Phone: +86 21 5424 9058
The Netherlands
Taiwan
#
Dialog Semiconductor B.V.
Phone: +31 73 640 8822
Dialog Semiconductor Taiwan
Phone: +886 281 786 222
Email:
Web site:
enquiry@diasemi.com
www.dialog-semiconductor.com
AT45DB081E
8-Mbit DataFlash (with Extra 256-kbits)
1.7 V Minimum SPI Serial Flash Memory
Features
Single 1.7 V - 3.6 V supply
Serial Peripheral Interface (SPI) compatible
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Supports SPI modes 0 and 3
Supports RapidS™ operation
Continuous read capability through entire array
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Up to 85 MHz
Low-power read option up to 15 MHz
Clock-to-output time (tV) of 6 ns maximum
User-configurable page size
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256 bytes per page
264 bytes per page (default)
Page size can be factory pre-configured for 256 bytes
Two fully independent SRAM data buffers (256/264 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
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Byte/Page Program (1 to 256/264 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
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Page Erase (256/264 bytes)
Block Erase (2 kB)
Sector Erase (64 kB)
Chip Erase (8 Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
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Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
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64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware- and software-controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
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400 nA Ultra-Deep Power-Down current (typical)
4.5 µA Deep Power-Down current (typical)
25 µA Standby current (typical)
11 mA Active Read current (typical @ 20 MHz))
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
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8-lead SOIC (0.150" wide and 0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)
8-ball (2 x 4) Array) Wafer Level Chip Scale Package
Die in Wafer Form
DS-AT45DB081E–028K–03/2021
Table of Contents
1. Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
2. Pin Configurations and Pinouts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
3. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4. Memory Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
6. Read Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
6.1 Continuous Array Read (Legacy Command: E8h Opcode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.2 Continuous Array Read (High Frequency Mode: 1Bh Opcode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.3 Continuous Array Read (High Frequency Mode: 0Bh Opcode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.4 Continuous Array Read (Low Frequency Mode: 03h Opcode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.5 Continuous Array Read (Low Power Mode: 01h Opcode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.6 Main Memory Page Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.7 Buffer Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7. Program and Erase Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
7.1 Buffer Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.2 Buffer to Main Memory Page Program with Built-In Erase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.3 Buffer to Main Memory Page Program without Built-In Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.4 Main Memory Page Program through Buffer with Built-In Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.5 Main Memory Byte/Page Program through Buffer 1 without Built-In Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.6 Read-Modify-Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.7 Page Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.8 Block Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.9 Sector Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7.10 Chip Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.11 Program/Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7.12 Program/Erase Resume. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
8. Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
8.1 Software Sector Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8.1.1 Enable Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
8.1.2 Disable Sector Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
8.2 Hardware Controlled Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
8.3 Sector Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.3.1 Erase Sector Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
8.3.2 Program Sector Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
8.3.3 Read Sector Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
8.3.4 About the Sector Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
9. Security Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
9.1 Sector Lockdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
9.1.1 Read Sector Lockdown Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
9.1.2 Freeze Sector Lockdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
9.2 Security Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
9.2.1 Programming the Security Register 31
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9.2.2 Reading the Security Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
10. Additional Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
10.1 Main Memory Page to Buffer Transfer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
10.2 Main Memory Page to Buffer Compare . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
10.3 Auto Page Rewrite . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
10.4 Status Register Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
10.4.1 RDY/BUSY Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
10.4.2 COMP Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
10.4.3 DENSITY Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
10.4.4 PROTECT Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
10.4.5 PAGE SIZE Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
10.4.6 EPE Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
10.4.7 SLE Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
10.4.8 PS2 Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
10.4.9 PS1 Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
10.4.10The ES bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
11. Deep Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
11.1 Resume from Deep Power-Down. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
11.2 Ultra-Deep Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
11.3 Exit Ultra-Deep Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
12. Buffer and Page Size Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41
13. Manufacturer and Device ID Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
14. Software Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
15. Operation Mode Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
16. Command Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46
17. Power-On/Reset State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
17.1 Power-Up/Power-Down Voltage and Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
18. System Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
19. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
19.1 Absolute Maximum Ratings* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
19.2 DC and AC Operating Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
19.3 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
19.4 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
19.5 Program and Erase Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
20. Input Test Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
21. Output Test Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
22. Using the RapidS Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58
23. AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60
24. Write Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62
25. Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63
26. Detailed Bit-level Read Waveforms: RapidS Mode 0/Mode 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65
27. Auto Page Rewrite Flowchart 69
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28. Ordering Information (Standard DataFlash Page Size) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71
28.1 Ordering Detail . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
28.2 Ordering Codes (Standard DataFlash Page Size) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
28.3 Ordering Codes (Binary Page Size). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
28.4 Ordering Codes (Reserved) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
29. Packaging Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73
29.1 8S1 – 8-lead JEDEC SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
29.2 8S2 – 8-lead EIAJ SOIC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
29.3 8 MA1 – 8-pad UDFN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
29.4 CS8-8A – 8-ball WLCSP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
30. Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .77
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1
Description
The AT45DB081E is a 1.7 V minimum, serial-interface sequential access Flash memory ideally suited for a wide
variety of digital voice, image, program code, and data storage applications. The AT45DB081E also supports the
RapidS serial interface for applications requiring very high speed operation. Its 8,650,752 bits of memory are
organized as 4,096 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB081E also
contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main
memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to
write a continuous data stream. Also, the SRAM buffers can be used as additional system scratch pad memory,
and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-
write operation.
Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel
interface, the DataFlash® uses a serial interface to sequentially access its data. The simple sequential access
dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes
switching noise, and reduces package size. The device is optimized for use in many commercial and industrial
applications where high-density, low-pin count, low-voltage, and low-power are essential.
To allow for simple in-system re-programmability, the AT45DB081E does not require high input voltages for
programming. The device operates from a single 1.7 V to 3.6 V power supply for the erase and program and read
operations. The AT45DB081E is enabled through the Chip Select pin (CS) and accessed via a three-wire interface
consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
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2
Pin Configurations and Pinouts
8-pad UDFN(1)
Top View
8-Ball WLCSP (2)
Bottom View
8-lead SOIC
Top View
(through package)
Pin 1
SI
SCK
RESET
CS
1
2
3
4
8
7
6
5
SO
CS
RESET
SCK
SI
WP
VCC
SI
SCK
RESET
CS
1
2
3
4
8
7
6
5
SO
GND
VCC
WP
GND
VCC
WP
GND
SO
Figure 2-1. Pinouts
Note: 1. The metal pad on the bottom of the UDFN package is not internally connected to a voltage potential.
This pad can be a “no connect” or connected to GND.
Table 2-1. Pin Configurations
Asserted
State
Symbol
Name and Function
Type
Chip Select: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device is deselected and normally be placed in the standby mode (not Deep Power-Down
mode) and the output pin (SO) is in a high-impedance state. When the device is deselected,
data is not accepted on the input pin (SI).
CS
Low
Input
A high-to-low transition on the CS pin is required to start an operation and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such
as a program or erase cycle, the device does not enter the standby mode until the operation is
done.
Serial Clock: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is
always latched on the rising edge of SCK, while output data on the SO pin is always clocked
out on the falling edge of SCK.
SCK
—
Input
Serial Input: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK. Data present on the SI pin is ignored whenever the device is deselected (CS is
deasserted).
SI
—
—
Input
Serial Output: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK. The SO pin is in a high-impedance state
whenever the device is deselected (CS is deasserted).
SO
Output
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Asserted
State
Symbol
Name and Function
Type
Write Protect: When the WP pin is asserted, all sectors specified for protection by the Sector
Protection Register are protected against program and erase operations regardless of whether
the Enable Sector Protection command has been issued or not. The WP pin functions
independently of the software controlled protection method. After the WP pin goes low, the
contents of the Sector Protection Register cannot be modified.
If a program or erase command is issued to the device while the WP pin is asserted, the device
ignores the command and perform no operation. The device returns to the idle state once the
CS pin has been deasserted. The Enable Sector Protection command and the Sector
Lockdown command, however, is recognized by the device when the WP pin is asserted.
WP
Low
Input
The WP pin is internally pulled-high and can be left floating if hardware controlled protection is
not used. However, it is recommended that the WP pin also be externally connected to VCC
whenever possible.
Reset: A low state on the reset pin (RESET) terminates the operation in progress and reset
the internal state machine to an idle state. The device remains in the reset condition as long as
a low level is present on the RESET pin. Normal operation can resume once the RESET pin is
brought back to a high level.
RESET
Low
Input
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET pin during power-on sequences. If this pin/feature is not used, then it is recommended
that the RESET pin be driven high externally.
Device Power Supply: The VCC pin is used to supply the source voltage to the device.
Operation at invalid VCC voltages can produce spurious results; do not attempt this.
VCC
—
—
Power
GND
Ground: The ground reference for the power supply. Connect GND to the system ground.
Ground
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3
Block Diagram
WP
Flash Memory Array
Page (256/264 bytes)
Buffer 1 (256/264 bytes)
Buffer 2 (256/264 bytes)
SCK
CS
RESET
VCC
I/O Interface
GND
SI
SO
Figure 3-1. Block Diagram
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4
Memory Array
To provide optimal flexibility, the AT45DB081E memory array is divided into three levels of granularity comprising
of sectors, blocks, and pages. Figure 4-1 illustrates the breakdown of each level and details the number of pages
per sector and block. Program operations to the DataFlash can be done at the full page level or at the byte level (a
variable number of bytes). The erase operations can be performed at the chip, sector, block, or page level.
Sector Architecture
Block Architecture
Page Architecture
Block 0
Block 1
Block 2
8 Pages
Page 0
Sector 0a
Sector 0a = 8 pages
2,048/2,112 bytes
Page 1
Sector 0b = 248 pages
63,488/65,472 bytes
Page 6
Page 7
Page 8
Page 9
Block 30
Block 31
Block 32
Block 33
Sector 1 = 256 pages
65,536/67,584 bytes
Sector 2 = 256 pages
65,536/67,584 bytes
Page 14
Page 15
Page 16
Page 17
Page 18
Block 62
Block 63
Block 64
Block 65
Sector 14 = 256 pages
65,536/67,584 bytes
Sector 15 = 256 pages
65,536/67,584 bytes
Block 510
Block 511
Page 4,094
Page 4,095
Block = 2,048/2,112 bytes
Page = 256/264 bytes
Figure 4-1. Memory Architecture Diagram
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5
Device Operation
The device operation is controlled by instructions from the host processor. The list of instructions and their
associated opcodes are contained in Table 16-1, on page 46, through Table 16-4, on page 47. A valid instruction
starts with the falling edge of CS followed by the appropriate eight-bit opcode and the desired buffer or main
memory address location. While the CS pin is low, toggling the SCK pin controls the loading of the opcode and the
desired buffer or main memory address location through the SI (Serial Input) pin. All instructions, addresses, and
data are transferred with the Most Significant Bit (MSB) first.
Three address bytes are used to address memory locations in either the main memory array or in one of the SRAM
buffers. The three address bytes are comprised of a number of dummy bits and a number of actual device address
bits, with the number of dummy bits varying depending on the operation being performed and the selected device
page size. Buffer addressing for the standard DataFlash page size (264 bytes) is referenced in the datasheet using
the terminology BFA8 - BFA0 to denote the nine address bits required to designate a byte address within a buffer.
The main memory addressing is referenced using the terminology PA11 - PA0 and BA8 - BA0, where PA11 - PA0
denotes the 12 address bits required to designate a page address, and BA8 - BA0 denotes the nine address bits
required to designate a byte address within the page. Therefore, when using the standard DataFlash page size, a
total of 21 address bits are used.
For the “power of 2” binary page size (256 bytes), the buffer addressing is referenced in the datasheet using the
conventional terminology BFA7 - BFA0 to denote the eight address bits required to designate a byte address within
a buffer. Main memory addressing is referenced using the terminology A19 - A0, where A19 - A8 denotes the 12
address bits required to designate a page address, and A7 - A0 denotes the eight address bits required to
designate a byte address within a page. Therefore, when using the binary page size, a total of 20 address bits are
used.
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6
Read Commands
By specifying the appropriate opcode, data can be read from the main memory or from either one of the two SRAM
data buffers. The DataFlash supports RapidS protocols for Mode 0 and Mode 3. See the diagrams in Section 26,
Detailed Bit-level Read Waveforms: RapidS Mode 0/Mode 3 for details on the clock cycle sequences for each
mode.
6.1
Continuous Array Read (Legacy Command: E8h Opcode)
By supplying an initial starting address for the main memory array, the Continuous Array Read command can be
used to sequentially read a continuous stream of data from the device by providing a clock signal; no additional
addressing information or control signals need to be provided. The DataFlash incorporates an internal address
counter that automatically increments on every clock cycle, allowing one continuous read from memory to be
performed without the need for additional address sequences. To perform a Continuous Array Read using the
standard DataFlash page size (264 bytes), an opcode of E8h must be clocked into the device followed by three
address bytes (which comprise the 24-bit page and byte address sequence) and four dummy bytes. The first 12
bits (PA11 - PA0) of the 21-bit address sequence specify which page of the main memory array to read and the last
nine (BA8 - BA0) of the 21-bit address sequence specify the starting byte address within the page. To perform a
Continuous Array Read using the binary page size (256 bytes), an opcode of E8h must be clocked into the device
followed by three address bytes and four dummy bytes. The first 12 bits (A19 - A8) of the 20-bit address sequence
specify which page of the main memory array to read and the last eight bits (A7 - A0) of the 20-bit address
sequence specify the starting byte address within the page. The dummy bytes that follow the address bytes are
needed to initialize the read operation. Following the dummy bytes, additional clock pulses on the SCK pin results
in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the
reading of data. When the end of a page in the main memory is reached during a Continuous Array Read, the
device continues reading at the beginning of the next page with no delays incurred during the page boundary
crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main
memory array has been read, the device continues reading back at the beginning of the first page of memory. As
with crossing over page boundaries, no delays are incurred when wrapping around from the end of the array to the
beginning of the array.
A low-to-high transition on the CS pin terminates the read operation and tri-states the output pin (SO). The
maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR1 specification. The
Continuous Array Read bypasses the data buffers and leaves the contents of the buffers unchanged.
Warning:
This command is not recommended for new designs.
6.2
Continuous Array Read (High Frequency Mode: 1Bh Opcode)
This command can be used to read the main memory array sequentially at the highest possible operating clock
frequency up to the maximum specified by fCAR4. To perform a Continuous Array Read using the standard
DataFlash page size (264 bytes), the CS pin must first be asserted, and then an opcode of 1Bh must be clocked
into the device followed by three address bytes and two dummy bytes. The first 12 bits (PA11 - PA0) of the 21-bit
address sequence specify which page of the main memory array to read and the last nine bits (BA8 - BA0) of the
21-bit address sequence specify the starting byte address within the page. To perform a Continuous Array Read
using the binary page size (256 bytes), the opcode 1Bh must be clocked into the device followed by three address
bytes (A19 - A0) and two dummy bytes. Following the dummy bytes, additional clock pulses on the SCK pin results
in data being output on the SO (Serial Output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the
reading of data. When the end of a page in the main memory is reached during a Continuous Array Read, the
device continues reading at the beginning of the next page with no delays incurred during the page boundary
crossover (the crossover from the end of one page to the beginning of the next page). When the last bit in the main
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memory array has been read, the device continues reading back at the beginning of the first page of memory. As
with crossing over page boundaries, no delays are incurred when wrapping around from the end of the array to the
beginning of the array.
A low-to-high transition on the CS pin terminates the read operation and tri-states the output pin (SO). The
maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR4 specification. The
Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.
6.3
Continuous Array Read (High Frequency Mode: 0Bh Opcode)
This command can be used to read the main memory array sequentially at higher clock frequencies up to the
maximum specified by fCAR1. To perform a Continuous Array Read using the standard DataFlash page size (264
bytes), the CS pin must first be asserted, and then an opcode of 0Bh must be clocked into the device followed by
three address bytes and one dummy byte. The first 12 bits (PA11 - PA0) of the 21-bit address sequence specify
which page of the main memory array to read and the last nine bits (BA8 - BA0) of the 21-bit address sequence
specify the starting byte address within the page. To perform a Continuous Array Read using the binary page size
(256 bytes), the opcode 0Bh must be clocked into the device followed by three address bytes (A19 - A0) and one
dummy byte. Following the dummy byte, additional clock pulses on the SCK pin results in data being output on the
SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy byte, and the reading
of data. When the end of a page in the main memory is reached during a Continuous Array Read, the device
continues reading at the beginning of the next page with no delays incurred during the page boundary crossover
(the crossover from the end of one page to the beginning of the next page). When the last bit in the main memory
array has been read, the device continues reading back at the beginning of the first page of memory. As with
crossing over page boundaries, no delays are incurred when wrapping around from the end of the array to the
beginning of the array.
A low-to-high transition on the CS pin terminates the read operation and tri-states the output pin (SO). The
maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR1 specification. The
Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.
6.4
Continuous Array Read (Low Frequency Mode: 03h Opcode)
This command can be used to read the main memory array sequentially at lower clock frequencies up to maximum
specified by fCAR2. Unlike the previously described read commands, this Continuous Array Read command for the
lower clock frequencies does not require the clocking in of dummy bytes after the address byte sequence. To
perform a Continuous Array Read using the standard DataFlash page size (264 bytes), the CS pin must first be
asserted, and then an opcode of 03h must be clocked into the device followed by three address bytes. The first 12
bits (PA11 - PA0) of the 21-bit address sequence specify which page of the main memory array to read and the last
nine bits (BA8 - BA0) of the address sequence specify the starting byte address within the page. To perform a
Continuous Array Read using the binary page size (256 bytes), the opcode 03h must be clocked into the device
followed by three address bytes (A19 - A0). Following the address bytes, additional clock pulses on the SCK pin
results in data being output on the SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When
the end of a page in the main memory is reached during a Continuous Array Read, the device continues reading at
the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the
end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the
device continues reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays are incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin terminates the read operation and tri-states the output pin (SO). The
maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR2 specification. The
Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.
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6.5
Continuous Array Read (Low Power Mode: 01h Opcode)
This command is ideal for applications that want to minimize power consumption and do not need to read the
memory array at high frequencies. Like the 03h opcode, this Continuous Array Read command allows reading the
main memory array sequentially without the need for dummy bytes to be clocked in after the address byte
sequence. The memory can be read at clock frequencies up to maximum specified by fCAR3. To perform a
Continuous Array Read using the standard DataFlash page size (264 bytes), the CS pin must first be asserted, and
then an opcode of 01h must be clocked into the device followed by three address bytes. The first 12 bits (PA11 -
PA0) of the 21-bit address sequence specify which page of the main memory array to read and the last nine bits
(BA8 - BA0) of the 21-bit address sequence specify the starting byte address within the page. To perform a
Continuous Array Read using the binary page size (256 bytes), the opcode 01h must be clocked into the device
followed by three address bytes (A19 - A0). Following the address bytes, additional clock pulses on the SCK pin
results in data being output on the SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When
the end of a page in the main memory is reached during a Continuous Array Read, the device continues reading at
the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the
end of one page to the beginning of the next page). When the last bit in the main memory array has been read, the
device continues reading back at the beginning of the first page of memory. As with crossing over page
boundaries, no delays are incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin terminates the read operation and tri-states the output pin (SO). The
maximum SCK frequency allowable for the Continuous Array Read is defined by the fCAR3 specification. The
Continuous Array Read bypasses both data buffers and leaves the contents of the buffers unchanged.
6.6
Main Memory Page Read
A Main Memory Page Read allows the reading of data directly from a single page in the main memory, bypassing
both of the data buffers and leaving the contents of the buffers unchanged. To start a page read using the standard
DataFlash page size (264 bytes), an opcode of D2h must be clocked into the device followed by three address
bytes (which comprise the 21-bit page and byte address sequence) and four dummy bytes. The first 12 bits (PA11
- PA0) of the 21-bit address sequence specify the page in main memory to be read and the last nine bits (BA8 -
BA0) of the 21-bit address sequence specify the starting byte address within that page. To start a page read using
the binary page size (256 bytes), the opcode D2h must be clocked into the device followed by three address bytes
and four dummy bytes. The first 12 bits (A19 - A8) of the 20-bit address sequence specify which page of the main
memory array to read, and the last eight bits (A7 - A0) of the 20-bit address sequence specify the starting byte
address within that page. The dummy bytes that follow the address bytes are sent to initialize the read operation.
Following the dummy bytes, the additional pulses on SCK result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the
reading of data. Unlike the Continuous Array Read command, when the end of a page in main memory is reached,
the device continues reading back at the beginning of the same page rather than the beginning of the next page.
A low-to-high transition on the CS pin terminates the read operation and tri-states the output pin (SO). The
maximum SCK frequency allowable for the Main Memory Page Read is defined by the fSCK specification. The Main
Memory Page Read bypasses both data buffers and leaves the contents of the buffers unchanged.
6.7
Buffer Read
The SRAM data buffers can be accessed independently from the main memory array, and using the Buffer Read
command allows data to be sequentially read directly from either one of the buffers. Four opcodes, D4h or D1h for
Buffer 1 and D6h or D3h for Buffer 2, can be used for the Buffer Read command. The use of each opcode depends
on the maximum SCK frequency that is used to read data from the buffers. The D4h and D6h opcode can be used
at any SCK frequency up to the maximum specified by fCAR1 while the D1h and D3h opcode can be used for lower
frequency read operations up to the maximum specified by fCAR2
.
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To perform a Buffer Read using the standard DataFlash buffer size (264 bytes), the opcode must be clocked into
the device followed by three address bytes comprised of 15 dummy bits and nine buffer address bits (BFA8 -
BFA0). To perform a Buffer Read using the binary buffer size (256 bytes), the opcode must be clocked into the
device followed by three address bytes comprised of 16 dummy bits and eight buffer address bits (BFA7 - BFA0).
Following the address bytes, one dummy byte must be clocked into the device to initialize the read operation if
using opcodes D4h or D6h. The CS pin must remain low during the loading of the opcode, the address bytes, the
dummy byte (if using opcodes D4h or D6h), and the reading of data. When the end of a buffer is reached, the
device continues reading back at the beginning of the buffer. A low-to-high transition on the CS pin terminates the
read operation and tri-states the output pin (SO).
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7
Program and Erase Commands
7.1
Buffer Write
Using the Buffer Write command allows data clocked in from the SI pin to be written directly into either one of the
SRAM data buffers.
To load data into a buffer using the standard DataFlash buffer size (264 bytes), an opcode of 84h for Buffer 1 or
87h for Buffer 2 must be clocked into the device followed by three address bytes comprised of 15 dummy bits and
nine buffer address bits (BFA8 - BFA0). The nine buffer address bits specify the first byte in the buffer to be written.
To load data into a buffer using the binary buffer size (256 bytes), an opcode of 84h for Buffer 1 or 87h for Buffer 2,
must be clocked into the device followed by 16 dummy bits and eight buffer address bits (BFA7 - BFA0). The eight
buffer address bits specify the first byte in the buffer to be written.
After the last address byte has been clocked into the device, data can then be clocked in on subsequent clock
cycles. If the end of the data buffer is reached, the device wraps around back to the beginning of the buffer. Data
continues to be loaded into the buffer until a low-to-high transition is detected on the CS pin.
7.2
Buffer to Main Memory Page Program with Built-In Erase
The Buffer to Main Memory Page Program with Built-In Erase command allows data that is stored in one of the
SRAM buffers to be written into an erased or programmed page in the main memory array. It is not necessary to
pre-erase the page in main memory to be written because this command automatically erases the selected page
prior to the program cycle.
To perform a Buffer to Main Memory Page Program with Built-In Erase using the standard DataFlash page size
(264 bytes), an opcode of 83h for Buffer 1 or 86h for Buffer 2 must be clocked into the device followed by three
address bytes comprised of three dummy bits, 12 page address bits (PA11 - PA0) that specify the page in the main
memory to be written, and nine dummy bits.
To perform a Buffer to Main Memory Page Program with Built-In Erase using the binary page size (256 bytes), an
opcode of 83h for Buffer 1 or 86h for Buffer 2 must be clocked into the device followed by three address bytes
comprised of four dummy bits, 12 page address bits (A19 - A8) that specify the page in the main memory to be
written, and eight dummy bits.
When a low-to-high transition occurs on the CS pin, the device first erases the selected page in main memory (the
erased state is a logic 1) and then program the data stored in the appropriate buffer into that same page in main
memory. Erasing and programming the page are internally self-timed and take a maximum time of tEP. During this
time, the RDY/BUSY bit in the Status Register indicates that the device is busy.
The device also incorporates an intelligent erase and program algorithm that can detect when a byte location fails
to erase or program properly. If an erase or programming error arises, it is indicated by the EPE bit in the Status
Register.
7.3
Buffer to Main Memory Page Program without Built-In Erase
The Buffer to Main Memory Page Program without Built-In Erase command allows data that is stored in one of the
SRAM buffers to be written into a pre-erased page in the main memory array. It is necessary that the page in main
memory to be written be previously erased in order to avoid programming errors.
To perform a Buffer to Main Memory Page Program without Built-In Erase using the standard DataFlash page size
(264 bytes), an opcode of 88h for Buffer 1 or 89h for Buffer 2 must be clocked into the device followed by three
address bytes comprised of three dummy bits, 12 page address bits (PA11 - PA0) that specify the page in the main
memory to be written, and nine dummy bits.
To perform a Buffer to Main Memory Page Program using the binary page size (256 bytes), an opcode of 88h for
Buffer 1 or 89h for Buffer 2 must be clocked into the device followed by three address bytes comprised of four
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dummy bits, 12 page address bits (A19 - A8) that specify the page in the main memory to be written, and eight
dummy bits.
When a low-to-high transition occurs on the CS pin, the device programs the data stored in the appropriate buffer
into the specified page in the main memory. The page in main memory that is being programmed must have been
previously erased using one of the erase commands (Page Erase, Block Erase, Sector Erase, or Chip Erase).
Programming the page is internally self-timed and takes a maximum time of tP. During this time, the RDY/BUSY bit
in the Status Register indicates that the device is busy.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to
program properly. If a programming error arises, it is indicated by the EPE bit in the Status Register.
7.4
Main Memory Page Program through Buffer with Built-In Erase
The Main Memory Page Program through Buffer with Built-In Erase command combines the Buffer Write and
Buffer to Main Memory Page Program with Built-In Erase operations into a single operation to help simplify
application firmware development. With the Main Memory Page Program through Buffer with Built-In Erase
command, data is first clocked into either Buffer 1 or Buffer 2, the addressed page in memory is then automatically
erased, and then the contents of the appropriate buffer are programmed into the just-erased main memory page.
To perform a Main Memory Page Program through Buffer using the standard DataFlash page size (264 bytes), an
opcode of 82h for Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes
comprised of three dummy bits, 12 page address bits (PA11 - PA0) that specify the page in the main memory to be
written, and nine buffer address bits (BFA8 - BFA0) that select the first byte in the buffer to be written.
To perform a Main Memory Page Program through Buffer using the binary page size (256 bytes), an opcode of 82h
for Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes comprised of
four dummy bits, 12 page address bits (A19 - A8) that specify the page in the main memory to be written, and eight
buffer address bits (BFA7 - BFA0) that select the first byte in the buffer to be written.
After all address bytes have been clocked in, the device takes data from the input pin (SI) and store it in the
specified data buffer. If the end of the buffer is reached, the device wraps around back to the beginning of the
buffer. When there is a low-to-high transition on the CS pin, the device first erases the selected page in main
memory (the erased state is a logic 1) and then program the data stored in the buffer into that main memory page.
Erasing and programming the page are internally self-timed and take a maximum time of tEP. During this time, the
RDY/BUSY bit in the Status Register indicates that the device is busy.
The device also incorporates an intelligent erase and programming algorithm that can detect when a byte location
fails to erase or program properly. If an erase or program error arises, it is indicated by the EPE bit in the Status
Register.
7.5
Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
The Main Memory Byte/Page Program through Buffer 1 without Built-In Erase command combines both the Buffer
Write and Buffer to Main Memory Program without Built-In Erase operations to allow any number of bytes (1 to
256/264 bytes) to be programmed directly into previously erased locations in the main memory array. With the
Main Memory Byte/Page Program through Buffer 1 without Built-In Erase command, data is first clocked into Buffer
1, and then only the bytes clocked into the buffer are programmed into the pre-erased byte locations in main
memory. Multiple bytes up to the page size can be entered with one command sequence.
To perform a Main Memory Byte/Page Program through Buffer 1 using the standard DataFlash page size (264
bytes), an opcode of 02h must first be clocked into the device followed by three address bytes comprised of three
dummy bits, 12 page address bits (PA11 - PA0) that specify the page in the main memory to be written, and nine
buffer address bits (BFA8 - BFA0) that select the first byte in the buffer to be written. After all address bytes are
clocked in, the device takes data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 264) can
be entered. If the end of the buffer is reached, then the device wraps around back to the beginning of the buffer.
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To perform a Main Memory Byte/Page Program through Buffer 1 using the binary page size (256 bytes), an opcode
of 02h for Buffer 1 using must first be clocked into the device followed by three address bytes comprised of four
dummy bits, 12 page address bits (A19 - A8) that specify the page in the main memory to be written, and eight
buffer address bits (BFA7 - BFA0) that selects the first byte in the buffer to be written. After all address bytes are
clocked in, the device takes data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 256) can
be entered. If the end of the buffer is reached, then the device wraps around back to the beginning of the buffer.
When using the binary page size, the page and buffer address bits correspond to a 20-bit logical address (A19-A0)
in the main memory.
After all data bytes have been clocked into the device, a low-to-high transition on the CS pin starts the program
operation in which the device programs the data stored in Buffer 1 into the main memory array. Only the data bytes
that were clocked into the device are programmed into the main memory.
Example: If only two data bytes were clocked into the device, then only two bytes are programmed into main memory
and the remaining bytes in the memory page remain in their previous state.
The CS pin must be deasserted on a byte boundary (multiples of eight bits); otherwise, the operation is aborted
and no data is programmed. Programming the data bytes is internally self-timed and takes a maximum time of tP
(the program time is a multiple of the tBP time depending on the number of bytes being programmed). During this
time, the RDY/BUSY bit in the Status Register indicates that the device is busy.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to
program properly. If a programming error arises, it is indicated by the EPE bit in the Status Register.
7.6
Read-Modify-Write
A completely self-contained read-modify-write operation can be performed to reprogram any number of sequential
bytes in a page in the main memory array without affecting the rest of the bytes in the same page. This command
allows the device to easily emulate an EEPROM by providing a method to modify a single byte or more in the main
memory in a single operation, without the need for pre-erasing the memory or the need for any external RAM
buffers. The Read-Modify-Write command is essentially a combination of the Main Memory Page to Buffer
Transfer, Buffer Write, and Buffer to Main Memory Page Program with Built-in Erase commands.
To perform a Read-Modify-Write using the standard DataFlash page size (264 bytes), an opcode of 58h for Buffer
1 or 59h for Buffer 2 must be clocked into the device followed by three address bytes comprised of three dummy
bits, 12 page address bits (PA11 - PA0) that specify the page in the main memory to be written, and nine byte
address bits (BA8 - BA0) that designate the starting byte address within the page to reprogram.
To perform a Read-Modify-Write using the binary page size (256 bytes), an opcode of 58h for Buffer 1 or 59h for
Buffer 2 must be clocked into the device followed by three address bytes comprised of four dummy bits, 12 page
address bits (A19 - A8) that specify the page in the main memory to be written, and eight byte address bits (A7 -
A0) designate the starting byte address within the page to reprogram.
After the address bytes have been clocked in, any number of sequential data bytes from one to 256/264 bytes can
be clocked into the device. If the end of the buffer is reached when clocking in the data, then the device wraps
around back to the beginning of the buffer. After all data bytes have been clocked into the device, a low-to-high
transition on the CS pin starts the self-contained, internal read-modify-write operation. Only the data bytes that
were clocked into the device are reprogrammed in the main memory.
Example: If only one data byte was clocked into the device, then only one byte in main memory is reprogrammed and
the remaining bytes in the main memory page remain in their previous state.
The CS pin must be deasserted on a byte boundary (multiples of eight bits); otherwise, the operation is aborted
and no data is programmed. Reprogramming the data bytes is internally self-timed and takes a maximum time of
tP. During this time, the RDY/BUSY bit in the Status Register indicates that the device is busy.
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The device also incorporates an intelligent erase and programming algorithm that can detect when a byte location
fails to erase or program properly. If an erase or program error arises, it is indicated by the EPE bit in the Status
Register.
Note: The Read-Modify-Write command uses the same opcodes as the Auto Page Rewrite command. If no data bytes
are clocked into the device, then the device performs an Auto Page Rewrite operation. See the Auto Page
Rewrite command description on page 33 for more details.
7.7
Page Erase
The Page Erase command can be used to individually erase any page in the main memory array allowing the
Buffer to Main Memory Page Program without Built-In Erase command or the Main Memory Byte/Page Program
through Buffer 1 command to be used at a later time.
To perform a Page Erase with the standard DataFlash page size (264 bytes), an opcode of 81h must be clocked
into the device followed by three address bytes comprised of three dummy bits, 12 page address bits (PA11 - PA0)
that specify the page in the main memory to be erased, and nine dummy bits.
To perform a Page Erase with the binary page size (256 bytes), an opcode of 81h must be clocked into the device
followed by three address bytes comprised of four dummy bits, 12 page address bits (A19 - A8) that specify the
page in the main memory to be erased, and eight dummy bits.
When a low-to-high transition occurs on the CS pin, the device erases the selected page (the erased state is a
logic 1). The erase operation is internally self-timed and takes a maximum time of tPE. During this time, the
RDY/BUSY bit in the Status Register indicates that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase
properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.
7.8
Block Erase
The Block Erase command can be used to erase a block of eight pages at one time. This command is useful when
needing to pre-erase larger amounts of memory and is more efficient than issuing eight separate Page Erase
commands.
To perform a Block Erase with the standard DataFlash page size (264 bytes), an opcode of 50h must be clocked
into the device followed by three address bytes comprised of three dummy bits, nine page address bits (PA11 -
PA3), and 12 dummy bits. The nine page address bits are used to specify which block of eight pages is to be
erased.
To perform a Block Erase with the binary page size (256 bytes), an opcode of 50h must be clocked into the device
followed by three address bytes comprised of four dummy bits, nine page address bits (A19 - A11), and 11 dummy
bits. The nine page address bits are used to specify which block of eight pages is to be erased.
When a low-to-high transition occurs on the CS pin, the device erases the selected block of eight pages. The erase
operation is internally self-timed and takes a maximum time of tBE. During this time, the RDY/BUSY bit in the Status
Register indicates that the device is busy.
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The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase
properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.
Table 7-1.
Block Erase Addressing
PA11/
A19
PA10/
A18
PA9/
A17
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8
Block
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
0
1
2
3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
508
509
510
511
7.9
Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
The main memory array is comprised of nine sectors, and only one sector can be erased at a time. To perform an
erase of Sector 0a or Sector 0b with the standard DataFlash page size (264 bytes), an opcode of 7Ch must be
clocked into the device followed by three address bytes comprised of three dummy bits, nine page address bits
(PA11 - PA3), and 12 dummy bits. To perform a Sector 1-15 erase, an opcode of 7Ch must be clocked into the
device followed by three address bytes comprised of three dummy bits, four page address bits (PA11 - PA8), and
17 dummy bits.
To perform a Sector 0a or Sector 0b erase with the binary page size (256 bytes), an opcode of 7Ch must be
clocked into the device followed by three address bytes comprised of four dummy bits, nine page address bits (A19
- A11), and 11 dummy bits. To perform a Sector 1-15 erase, an opcode of 7Ch must be clocked into the device
followed by four dummy bits, four page address bits (A19 - A16), and 16 dummy bits.
The page address bits are used to specify any valid address location within the sector to be erased. When a low-to
high transition occurs on the CS pin, the device erases the selected sector. The erase operation is internally self-
timed and takes a maximum time of tSE. During this time, the RDY/BUSY bit in the Status Register indicates that
the device is busy.
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The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it is indicated by the EPE bit in the Status Register.
Table 7-2.
Sector Erase Addressing
PA11/ PA10/
PA9/
A17
PA8/
A16
PA7/
A15
PA6/
A14
PA5/
A13
PA4/
A12
PA3/
A11
PA2/
A10
PA1/
A9
PA0/
A8
A19
A18
Sector
0
0
0
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
0a
0b
1
0
0
0
0
X
X
X
X
X
X
X
X
X
X
0
0
2
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
1
1
1
1
1
1
1
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
12
13
14
15
7.10 Chip Erase
The Chip Erase command allows the entire main memory array to be erased can be erased at one time.
To execute the Chip Erase command, a four-byte command sequence of C7h, 94h, 80h, and 9Ah must be clocked
into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into the
device, and any data clocked in after the opcode is ignored. After the last bit of the opcode sequence has been
clocked in, the CS pin must be deasserted to start the erase process. The erase operation is internally self-timed
and takes a time of tCE. During this time, the RDY/BUSY bit in the Status Register indicates that the device is busy.
The Chip Erase command does not affect sectors that are protected or locked down; the contents of those sectors
remain unchanged. Only those sectors that are not protected or locked down are erased.
The WP pin can be asserted while the device is erasing, but protection is not activated until the internal erase cycle
completes.
The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it is indicated by the EPE bit in the Status Register.
Table 7-3.
Chip Erase Command
Command
Byte 1
Byte 2
Byte 3
Byte 4
Chip Erase
C7h
94h
80h
9Ah
CS
C7h
94h
80h
9Ah
Each transition represents eight bits
Figure 7-1. Chip Erase
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7.11 Program/Erase Suspend
In some code and data storage applications, it might not be possible for the system to wait the milliseconds
required for the Flash memory to complete a program or erase cycle. The Program/Erase Suspend command
allows a program or erase operation in progress to a particular 64KB sector of the main memory array to be
suspended so that other device operations can be performed.
Example: By suspending an erase operation to a particular sector, the system can perform functions such as a
program or read operation within a different 64KB sector. Other device operations, such as Read Status
Register, can also be performed while a program or erase operation is suspended.
To perform a Program/Erase Suspend, an opcode of B0h must be clocked into the device. No address bytes need
to be clocked into the device, and any data clocked in after the opcode is ignored. When the CS pin is deasserted,
the program or erase operation currently in progress is suspended within a time of tSUSP. One of the Program
Suspend bits (PS1 or PS2) or the Erase Suspend bit (ES) in the Status Register is then set to the logic 1 state.
Also, the RDY/BUSY bit in the Status Register indicates that the device is ready for another operation.
Read operations are not allowed to a 64KB sector that has had its program or erase operation suspended. If a read
is attempted to a suspended sector, then the device outputs undefined data. Therefore, when performing a
Continuous Array Read operation and the device's internal address counter increments and crosses the sector
boundary to a suspended sector, the device then starts outputting undefined data continuously until the address
counter increments and crosses a sector boundary to an unsuspended sector.
A program operation is not allowed to a sector that has been erase suspended. If a program operation is attempted
to an erase suspended sector, then the program operation aborts.
During an Erase Suspend, a program operation to a different 64KB sector can be started and subsequently
suspended. This results in a simultaneous Erase Suspend/Program Suspend condition and is indicated by the
states of both the ES and PS1 or PS2 bits in the Status Register being set to a logic 1.
If a Reset command is performed, or if the RESET pin is asserted while a sector is erase suspended, then the
suspend operation is aborted and the contents of the sector are left in an undefined state. However, if a reset is
performed while a page is program or erase suspended, the suspend operation aborts but only the contents of the
page that was being programmed or erased are undefined; the remaining pages in the 64KB sector retain their
previous contents.
Table 7-4. Operations Allowed and Not Allowed During Suspend
Operation During
Program Suspend in
Buffer 1 (PS1)
Operation During
Program Suspend in
Buffer 2 (PS2)
Operation During
Erase Suspend (ES)
Command
Read Commands
Read Array (All Opcodes)
Read Buffer 1 (All Opcodes)
Read Buffer 2 (All Opcodes)
Program and Erase Commands
Buffer 1 Write
Allowed
Allowed
Allowed
Allowed
Allowed
Allowed
Allowed
Allowed
Allowed
Not Allowed
Allowed
Allowed
Allowed
Allowed
Buffer 2 Write
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Buffer 1 to Memory Program w/ Erase
Buffer 2 to Memory Program w/ Erase
Buffer 1 to Memory Program w/o Erase
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
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Table 7-4. Operations Allowed and Not Allowed During Suspend (continued)
Operation During
Program Suspend in
Buffer 1 (PS1)
Operation During
Program Suspend in
Buffer 2 (PS2)
Operation During
Erase Suspend (ES)
Command
Buffer 2 to Memory Program w/o Erase
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Memory Program through Buffer 1 w/
Erase
Not Allowed
Memory Program through Buffer 2 w/
Erase
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Memory Program through Buffer 1 w/o
Erase
Auto Page Rewrite through Buffer 1
Auto Page Rewrite through Buffer 2
Read-Modify-Write through Buffer 1
Read-Modify-Write through Buffer 2
Page Erase
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Block Erase
Sector Erase
Chip Erase
Protection and Security Commands
Enable Sector Protection
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Disable Sector Protection
Erase Sector Protection Register
Program Sector Protection Register
Read Sector Protection Register
Sector Lockdown
Not Allowed
Allowed
Not Allowed
Allowed
Not Allowed
Allowed
Read Sector Lockdown
Freeze Sector Lockdown State
Program Security Register
Read Security Register
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Allowed
Additional Commands
Main Memory to Buffer 1 Transfer
Main Memory to Buffer 2 Transfer
Main Memory to Buffer 1 Compare
Main Memory to Buffer 2 Compare
Enter Deep Power-Down
Not Allowed
Allowed
Allowed
Not Allowed
Allowed
Allowed
Allowed
Not Allowed
Allowed
Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Resume from Deep Power-Down
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Table 7-4. Operations Allowed and Not Allowed During Suspend (continued)
Operation During
Program Suspend in
Buffer 1 (PS1)
Operation During
Program Suspend in
Buffer 2 (PS2)
Operation During
Erase Suspend (ES)
Command
Enter Ultra-Deep Power-Down mode
Read Configuration Register
Read Status Register
Not Allowed
Allowed
Not Allowed
Allowed
Not Allowed
Allowed
Allowed
Allowed
Allowed
Read Manufacturer and Device ID
Reset (via Hardware or Software)
Allowed
Allowed
Allowed
Allowed
Allowed
Allowed
7.12 Program/Erase Resume
The Program/Erase Resume command allows a suspended program or erase operation to be resumed and
continue where it left off.
To perform a Program/Erase Resume, an opcode of D0h must be clocked into the device. No address bytes need
to be clocked into the device, and any data clocked in after the opcode is ignored. When the CS pin is deasserted,
the program or erase operation currently suspended is resumed within a time of tRES. The PS1 bit, PS2 bit, or ES
bit in the Status Register is then reset back to a logic 0 state to indicate that the program or erase operation is no
longer suspended. Also, the RDY/BUSY bit in the Status Register indicates that the device is busy performing a
program or erase operation.
During a simultaneous Erase Suspend/Program Suspend condition, issuing the Program/Erase Resume command
results in the program operation resuming first. After the program operation has been completed, the
Program/Erase Resume command must be issued again in order for the erase operation to be resumed.
While the device is busy resuming a program or erase operation, any attempts at issuing the Program/Erase
Suspend command are ignored. Therefore, if a resumed program or erase operation needs to be subsequently
suspended again, the system must either wait the entire tRES time before issuing the Program/Erase Suspend
command, or it must check the status of the RDY/BUSY bit or the appropriate PS1, PS2, or ES bit in the Status
Register to determine if the previously suspended program or erase operation has resumed.
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8
Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against inadvertent or
erroneous program and erase cycles. The software controlled method relies on the use of software commands to
enable and disable sector protection while the hardware controlled method employs the use of the Write Protect
(WP) pin. The selection of which sectors that are to be protected or unprotected against program and erase
operations is specified in the Nonvolatile Sector Protection Register. The status of whether or not sector protection
has been enabled or disabled by either the software or the hardware controlled methods can be determined by
checking the Status Register.
8.1
Software Sector Protection
Software controlled protection is useful in applications in which the WP pin is not or cannot be controlled by a host
processor. In such instances, the WP pin can be left floating (the WP pin is internally pulled high) and sector
protection can be controlled using the Enable Sector Protection and Disable Sector Protection commands.
If the device is power cycled, then the software controlled protection is disabled. Once the device is powered up,
reissue the Enable Sector Protection command if sector protection is wanted and if the WP pin is not used.
8.1.1 Enable Sector Protection
Sectors specified for protection in the Sector Protection Register can be protected from program and erase
operations by issuing the Enable Sector Protection command. To enable the sector protection, a four-byte
command sequence of 3Dh, 2Ah, 7Fh, and A9h must be clocked into the device. After the last bit of the opcode
sequence has been clocked in, the CS pin must be deasserted to enable the Sector Protection.
Table 8-1.
Command
Enable Sector Protection Command
Byte 1
Byte 2
Byte 3
Byte 4
Enable Sector Protection
3Dh
2Ah
7Fh
A9h
CS
SI
3Dh
2Ah
7Fh
A9h
Each transition represents eight bits
Figure 8-1. Enable Sector Protection
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8.1.2 Disable Sector Protection
To disable the sector protection, a four-byte command sequence of 3Dh, 2Ah, 7Fh, and 9Ah must be clocked into
the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be deasserted to disable
the sector protection.
Table 8-2.
Command
Disable Sector Protection Command
Byte 1
Byte 2
Byte 3
Byte 4
Disable Sector Protection
3Dh
2Ah
7Fh
9Ah
CS
3Dh
2Ah
7Fh
9Ah
SI
Each transition represents eight bits
Figure 8-2. Disable Sector Protection
8.2
Hardware Controlled Protection
Sectors specified for protection in the Sector Protection Register and the Sector Protection Register itself can be
protected from program and erase operations by asserting the WP pin and keeping the pin in its asserted state.
The Sector Protection Register and any sector specified for protection cannot be erased or programmed as long as
the WP pin is asserted. In order to modify the Sector Protection Register, the WP pin must be deasserted. If the
WP pin is permanently connected to GND, then the contents of the Sector Protection Register cannot be changed.
If the WP pin is deasserted or permanently connected to VCC, then the contents of the Sector Protection Register
can be modified.
The WP pin overrides the software controlled protection method but only for protecting the sectors.
Example: If the sectors are not previously protected by the Enable Sector Protection command, then asserting the WP
pin enables the sector protection within the maximum specified tWPE time. When the WP pin is deasserted;
however, the sector protection is no longer enabled (after the maximum specified tWPD time) as long as the
Enable Sector Protection command was not issued while the WP pin was asserted. If the Enable Sector
Protection command was issued before or while the WP pin was asserted, then deasserting the WP pin
does not disable the sector protection. In this case, the Disable Sector Protection command must be issued
while the WP pin is deasserted to disable the sector protection. The Disable Sector Protection command is
also ignored whenever the WP pin is asserted.
A noise filter is incorporated to help protect against spurious noise that might inadvertently assert or deassert the
WP pin.
Figure 8-3 and Table 8-3 detail the sector protection status for various scenarios of the WP pin, the Enable Sector
Protection command, and the Disable Sector Protection command.
1
2
3
WP
Figure 8-3. WP Pin and Protection Status
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Table 8-3.
WP Pin and Protection Status
Sector
Protection
Status
Sector
Protection
Register
Time
Period
Disable Sector
Protection Command
WP Pin
Enable Sector Protection Command
Command Not Issued Previously
X
Disabled
Disabled
Enabled
Enabled
Enabled
Disabled
Enabled
Read/Write
Read/Write
Read/Write
Read
1
High
—
Issue Command
Issue Command
—
2
3
Low
X
X
Command Issued During Period 1 or 2
Not Issued Yet
Issue Command
—
Read/Write
Read/Write
Read/Write
High
—
Issue Command
8.3
Sector Protection Register
The nonvolatile Sector Protection Register specifies which sectors are to be protected or unprotected with either
the software or hardware controlled protection methods. The Sector Protection Register contains sixteen bytes of
data, of which byte locations zero through fifteen contain values that specify whether Sectors 0 through 15 are
protected or unprotected. The Sector Protection Register is user modifiable and must be erased before it can be
reprogrammed. Table 8-4 illustrates the format of the Sector Protection Register.
Table 8-4.
Sector Protection Register
Sector Number
0 (0a, 0b)
1 to 15
Protected
FFh
00h
See Table 8-5
Unprotected
Note: 1. The default values for bytes 0 through 7 are 00h when shipped from Adesto.
Table 8-5.
Sector 0 (0a, 0b) Sector Protection Register Byte Value
Bit 7:6
Bit 5:4
Bit 3:2
N/A
Bit 1:0
N/A
Data
Value
Sector Protection
Sector 0a
(Page 0-7)
Sector 0b
(Page 8-255)
Sectors 0a and 0b Unprotected
Protect Sector 0a
00
11
00
11
00
00
11
11
XX
XX
XX
XX
XX
XX
XX
XX
0xh
Cxh
3xh
Fxh
Protect Sector 0b
Protect Sectors 0a and 0b
Note: X = Don’t care.
8.3.1 Erase Sector Protection Register
In order to modify and change the values of the Sector Protection Register, it must first be erased using the Erase
Sector Protection Register command.
To erase the Sector Protection Register, a four-byte command sequence of 3Dh, 2Ah, 7Fh, and CFh must be
clocked into the device. After the last bit of the opcode sequence has been clocked in, the CS pin must be
deasserted to initiate the internally self-timed erase cycle. Erasing of the Sector Protection Register takes a
maximum time of tPE. During this time, the RDY/BUSY bit in the Status Register indicates that the device is busy. If
the device is powered-down before the erase cycle is done, then the contents of the Sector Protection Register
cannot be guaranteed.
The Sector Protection Register can be erased with sector protection enabled or disabled. Since the erased state
(FFh) of each byte in the Sector Protection Register is used to indicate that a sector is specified for protection,
leaving the sector protection enabled during the erasing of the register allows the protection scheme to be more
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effective in the prevention of accidental programming or erasing of the device. If an erroneous program or erase
command is sent to the device immediately after erasing the Sector Protection Register and before the register can
be reprogrammed, then the erroneous program or erase command is not processed because all sectors are
protected.
Table 8-6.
Command
Erase Sector Protection Register Command
Byte 1
Byte 2
Byte 3
Byte 4
Erase Sector Protection Register
3Dh
2Ah
7Fh
CFh
CS
SI
3Dh
2Ah
7Fh
CFh
Each transition represents eight bits
Figure 8-4. Erase Sector Protection Register
8.3.2 Program Sector Protection Register
Once the Sector Protection Register has been erased, it can be reprogrammed using the Program Sector
Protection Register command.
To program the Sector Protection Register, a four-byte command sequence of 3Dh, 2Ah, 7Fh, and FCh must be
clocked into the device followed by sixteen bytes of data corresponding to Sectors 0 through 15. After the last bit of
the opcode sequence and data have been clocked in, the CS pin must be deasserted to initiate the internally self-
timed program cycle. Programming the Sector Protection Register takes a maximum time of tP. During this time,
the RDY/BUSY bit in the Status Register indicates that the device is busy. If the device is powered-down before the
erase cycle is done, then the contents of the Sector Protection Register cannot be guaranteed.
If the proper number of data bytes is not clocked in before the CS pin is deasserted, then the protection status of
the sectors corresponding to the bytes not clocked in cannot be guaranteed.
Example: If only the first two bytes are clocked in instead of the complete sixteen bytes, then the protection status of
the last 14 sectors cannot be guaranteed. Furthermore, if more than sixteen bytes of data is clocked into the
device, then the data wraps back around to the beginning of the register. For instance, if seventeen bytes of
data are clocked in, then the seventeenth byte is stored at byte location 0 of the Sector Protection Register.
The data bytes clocked into the Sector Protection Register need to be valid values (0xh, 3xh, Cxh, and Fxh for
Sector 0a or Sector 0b, and 00h or FFh for other sectors) in order for the protection to function correctly. If a non-
valid value is clocked into a byte location of the Sector Protection Register, then the protection status of the sector
corresponding to that byte location cannot be guaranteed.
Example: If a value of 17h is clocked into byte location 2 of the Sector Protection Register, then the protection status
of Sector 2 cannot be guaranteed.
The Sector Protection Register can be reprogrammed while the sector protection is enabled or disabled. Being
able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily
disable the sector protection to an individual sector rather than disabling sector protection completely.
The Program Sector Protection Register command uses Buffer 1 for processing. Therefore, the contents of Buffer
1 are altered from its previous state when this command is issued.
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Table 8-7.
Command
Program Sector Protection Register Command
Byte 1
Byte 2
Byte 3
Byte 4
Program Sector Protection Register
3Dh
2Ah
7Fh
FCh
CS
Data Byte
Data Byte
n + 1
Data Byte
n + 15
3Dh
2Ah
7Fh
FCh
SI
n
Each transition represents eight bits
Figure 8-5. Program Sector Protection Register
8.3.3 Read Sector Protection Register
To read the Sector Protection Register, an opcode of 32h and three dummy bytes must be clocked into the device.
After the last bit of the opcode and dummy bytes have been clocked in, any additional clock pulses on the SCK pin
results in the Sector Protection Register contents being output on the SO pin. The first byte (byte location 0)
corresponds to Sector 0 (0a and 0b), the second byte corresponds to Sector 1, and the last byte (byte location 15)
corresponds to Sector 15. Once the last byte of the Sector Protection Register has been clocked out, any
additional clock pulses results in undefined data being output on the SO pin. The CS pin must be deasserted to
terminate the Read Sector Protection Register operation and put the output into a high-impedance state.
Table 8-8.
Command
Read Sector Protection Register Command
Byte 1
Byte 2
Byte 3
Byte 4
Read Sector Protection Register
Note: XX = Dummy byte.
32h
XXh
XXh
XXh
CS
32h
XX
XX
XX
SI
Data
n
Data
n + 1
Data
n + 15
SO
Each transition represents eight bits
Figure 8-6. Read Sector Protection Register
8.3.4 About the Sector Protection Register
The Sector Protection Register is subject to a limit of 10,000 erase/program cycles. Users are encouraged to
carefully evaluate the number of times the Sector Protection Register is modified during the course of the
application’s life cycle. If the application requires that the Security Protection Register be modified more than the
specified limit of 10,000 cycles because the application needs to temporarily unprotect individual sectors (sector
protection remains enabled while the Sector Protection Register is reprogrammed), then the application needs to
limit this practice. Instead, a combination of temporarily unprotecting individual sectors along with disabling sector
protection completely needs to be implemented by the application to ensure that the limit of 10,000 cycles is not
exceeded.
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9
Security Features
9.1
Sector Lockdown
The device incorporates a sector lockdown mechanism that allows each individual sector to be permanently locked
so that it becomes read-only (ROM). This is useful for applications that require the ability to permanently protect a
number of sectors against malicious attempts at altering program code or security information.
Warning:
Once a sector is locked down, it can never be erased or programmed, and it can never be unlocked.
To issue the sector lockdown command, a four-byte command sequence of 3Dh, 2Ah, 7Fh, and 30h must be
clocked into the device followed by three address bytes specifying any address within the sector to be locked
down. After the last address bit has been clocked in, the CS pin must be deasserted to initiate the internally self-
timed lockdown sequence. The lockdown sequence takes a maximum time of tP. During this time, the RDY/BUSY
bit in the Status Register indicates that the device is busy. If the device is powered-down before the lockdown
sequence is done, then the lockdown status of the sector cannot be guaranteed. In this case, it is recommended
that the user read the Sector Lockdown Register to determine the status of the appropriate sector lockdown bits or
bytes and re-issue the Sector Lockdown command if necessary.
Table 9-1.
Command
Sector Lockdown Command
Byte 1
Byte 2
Byte 3
Byte 4
Sector Lockdown
3Dh
2Ah
7Fh
30h
CS
SI
Address
byte
Address
byte
Address
byte
3Dh
2Ah
7Fh
30h
Each transition represents eight bits
Figure 9-1. Sector Lockdown
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9.1.1 Read Sector Lockdown Register
The nonvolatile Sector Lockdown Register specifies which sectors in the main memory are currently unlocked or
have been permanently locked down. The Sector Lockdown Register is a read-only register and contains sixteen
bytes of data which correspond to Sectors 0 through 15. To read the Sector Lockdown Register, an opcode of 35h
must be clocked into the device followed by three dummy bytes. After the last bit of the opcode and dummy bytes
have been clocked in, the data for the contents of the Sector Lockdown Register is clocked out on the SO pin. The
first byte (byte location 0) corresponds to Sector 0 (0a and 0b), the second byte corresponds to Sector 1, and the
last byte (byte location 15) corresponds to Sector 15. After the last byte of the Sector Lockdown Register has been
read, additional pulses on the SCK pin results in undefined data being output on the SO pin.
Deasserting the CS pin terminates the Read Sector Lockdown Register operation and put the SO pin into a high-
impedance state. Table 9-2 details the format the Sector Lockdown Register.
Table 9-2.
Sector Lockdown Register
Sector Number
Locked
0 (0a, 0b)
1 to 15
FFh
See Table 9-3
Unlocked
00h
Table 9-3.
Sector 0 (0a and 0b) Sector Lockdown Register Byte Value
Bit 7:6
Bit 5:4
Bit 3:2
Bit 1:0
Data
Value
Sector 0a
(Page 0-7)
Sector 0b
(Page 8-255)
N/A
00
00
00
00
N/A
00
00
00
00
Sectors 0a and 0b Unlocked
Sector 0a Locked
00
11
00
11
00
00
11
11
00h
C0h
30h
F0h
Sector 0b Locked
Sectors 0a and 0b Locked
Table 9-4.
Command
Read Sector Lockdown Register Command
Byte 1
Byte 2
Byte 3
XXh
Byte 4
Read Sector Lockdown Register
35h
XXh
XXh
CS
32h
XX
XX
XX
SI
Data
n
Data
n + 1
Data
SO
n + 15
Each transition represents eight bits
Figure 9-2. Read Sector Lockdown Register
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9.1.2 Freeze Sector Lockdown
The Sector Lockdown command can be permanently disabled, and the current sector lockdown state can be
permanently frozen so that no additional sectors can be locked down aside from those already locked down. Any
attempts to issue the Sector Lockdown command after the Sector Lockdown State has been frozen is ignored.
To issue the Freeze Sector Lockdown command, the CS pin must be asserted and the opcode sequence of 34h,
55h, AAh, and 40h must be clocked into the device. Any additional data clocked into the device is ignored. When
the CS pin is deasserted, the current sector lockdown state is permanently frozen within a time of tLOCK. Also, the
SLE bit in the Status Register is permanently reset to a logic 0 to indicate that the Sector Lockdown command is
permanently disabled.
Table 9-5.
Command
Freeze Sector Lockdown
Byte 1
Byte 2
Byte 3
Byte 4
Freeze Sector Lockdown
34h
55h
AAh
40h
CS
34h
55h
AAh
40h
SI
Each transition represents eight bits
Figure 9-3. Freeze Sector Lockdown
9.2
Security Register
The device contains a specialized Security Register that can be used for purposes such as unique device
serialization or locked key storage. The register is comprised of a total of 128 bytes that is divided into two portions.
The first 64 bytes (byte locations 0 through 63) of the Security Register are allocated as a One-Time
Programmable space. Once these 64 bytes have been programmed, they cannot be erased or reprogrammed.
The remaining 64 bytes of the register (byte locations 64 through 127) are factory programmed by Adesto and
contains a unique value for each device. The factory programmed data is fixed and cannot be changed.
Table 9-6.
Security Register
Security Register Byte Number
63 64
0
1
· · ·
65
· · ·
127
Data Type
One-Time User Programmable
Factory Programmed by Adesto
9.2.1 Programming the Security Register
The user programmable portion of the Security Register does not need to be erased before it is programmed.
To program the Security Register, a four-byte opcode sequence of 9Bh, 00h, 00h, and 00h must be clocked into
the device. After the last bit of the opcode sequence has been clocked into the device, the data for the contents of
the 64-byte user programmable portion of the Security Register must be clocked in.
After the last data byte has been clocked in, the CS pin must be deasserted to initiate the internally self-timed
program cycle. Programming the Security Register takes a time of tP, during which time the RDY/BUSY bit in the
Status Register indicates that the device is busy. If the device is powered-down during the program cycle, then the
contents of the 64-byte user programmable portion of the Security Register cannot be guaranteed.
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If the full 64 bytes of data are not clocked in before the CS pin is deasserted, then the values of the byte locations
not clocked in cannot be guaranteed.
Example: If only the first two bytes are clocked in instead of the complete 64 bytes, then the remaining 62 bytes of the
user programmable portion of the Security Register cannot be guaranteed. Furthermore, if more than 64
bytes of data is clocked into the device, then the data wraps back around to the beginning of the register.
For example, if 65 bytes of data are clocked in, then the 65th byte is stored at byte location 0 of the Security
Register.
Warning:
The user programmable portion of the Security Register can only be programmed one time.
Therefore, it is not possible, for example, to only program the first two bytes of the register and then program
the remaining 62 bytes at a later time.
The Program Security Register command uses Buffer 1 for processing. Therefore, the contents of Buffer 1
is altered from its previous state when this command is issued.
CS
SI
Data
n
Data
n + 1
Data
9Bh
00h
00h
00h
n + 63
Each transition represents eight bits
Figure 9-4. Program Security Register
9.2.2 Reading the Security Register
To read the Security Register, an opcode of 77h and three dummy bytes must be clocked into the device. After the
last dummy bit has been clocked in, the contents of the Security Register can be clocked out on the SO pin. After
the last byte of the Security Register has been read, additional pulses on the SCK pin results in undefined data
being output on the SO pin.
Deasserting the CS pin terminates the Read Security Register operation and put the SO pin into a high-impedance
state.
CS
SI
77h
XX
XX
XX
Data
n
Data
n + 1
Data
n + x
SO
Each transition represents eight bits
Figure 9-5. Read Security Register
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10 Additional Commands
10.1 Main Memory Page to Buffer Transfer
A page of data can be transferred from the main memory to either Buffer 1 or Buffer 2. To transfer a page of data
using the standard DataFlash page size (264 bytes), an opcode of 53h for Buffer 1 or 55h for Buffer 2 must be
clocked into the device followed by three address bytes comprised of three dummy bits, 12 page address bits
(PA11 - PA0) which specify the page in main memory to be transferred, and nine dummy bits. To transfer a page of
data using the binary page size (256 bytes), an opcode of 53h for Buffer 1 and 55h for Buffer 2 must be clocked
into the device followed by three address bytes comprised of four dummy bits, 12 page address bits (A19 - A8)
which specify the page in the main memory to be transferred, and eight dummy bits.
The CS pin must be low while toggling the SCK pin to load the opcode and the three address bytes from the input
pin (SI). The transfer of the page of data from the main memory to the buffer begins when the CS pin transitions
from a low to a high state. During the page transfer time (tXFR), the RDY/BUSY bit in the Status Register can be
read to determine whether or not the transfer has been completed.
10.2 Main Memory Page to Buffer Compare
A page of data in main memory can be compared to the data in Buffer 1 or Buffer 2 as a method to ensure that data
was successfully programmed after a Buffer to Main Memory Page Program command. To compare a page of data
with the standard DataFlash page size (264 bytes), an opcode of 60h for Buffer 1 or 61h for Buffer 2 must be
clocked into the device followed by three address bytes comprised of three dummy bits, 12 page address bits
(PA11 - PA0) which specify the page in the main memory to be compared to the buffer, and nine dummy bits. To
compare a page of data with the binary page size (256 bytes), an opcode of 60h for Buffer 1 or 61h for Buffer 2
must be clocked into the device followed by three address bytes comprised of four dummy bits, 12 page address
bits (A19 - A8) which specify the page in the main memory to be compared to the buffer, and eight dummy bits.
The CS pin must be low while toggling the SCK pin to load the opcode and the address bytes from the input pin
(SI). On the low-to-high transition of the CS pin, the data bytes in the selected Main Memory Page are compared
with the data bytes in Buffer 1 or Buffer 2. During the compare time (tCOMP), the RDY/BUSY bit in the Status
Register indicates that the part is busy. After the compare operation, bit 6 of the Status Register is updated with the
result of the compare.
10.3 Auto Page Rewrite
This command is required only if the possibility exists that static (non-changing) data might be stored in a page or
pages of a sector and the other pages of the same sector are erased and programmed a large number of times.
Applications that modify data in a random fashion within a sector can fall into this category. To preserve data
integrity of a sector, each page within a sector must be updated/rewritten at least once within every 50,000
cumulative page erase/program operations within that sector. The Auto Page Rewrite command provides a simple
and efficient method to “refresh” a page in the main memory array in a single operation.
The Auto Page Rewrite command is a combination of the Main Memory Page to Buffer Transfer and Buffer to Main
Memory Page Program with Built-In Erase commands. With the Auto Page Rewrite command, a page of data is
first transferred from the main memory to Buffer 1 or Buffer 2 and then the same data (from Buffer 1 or Buffer 2) is
programmed back into the same page of main memory, essentially “refreshing” the contents of that page. To start
the Auto Page Rewrite operation with the standard DataFlash page size (264 bytes), a 1-byte opcode, 58H for
Buffer 1 or 59H for Buffer 2, must be clocked into the device followed by three address bytes comprised of three
dummy bits, 12 page address bits (PA11-PA0) that specify the page in main memory to be rewritten, and nine
dummy bits.
To initiate an Auto Page Rewrite with the a binary page size (256 bytes), the opcode 58H for Buffer 1 or 59H for
Buffer 2, must be clocked into the device followed by three address bytes consisting of four dummy bits, 12 page
AT45DB081E
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address bits (A19 - A8) that specify the page in the main memory that is to be rewritten, and eight dummy bits.
When a low-to-high transition occurs on the CS pin, the part first transfers data from the page in main memory to a
buffer and then program the data from the buffer back into same page of main memory. The operation is internally
self-timed and takes a maximum time of tEP. During this time, the RDY/BUSY Status Register indicates that the
part is busy.
If a sector is programmed or reprogrammed sequentially page by page and the possibility does not exist that there
is a page or pages of static data, then the programming algorithm shown in Figure 27-1 on page 69 is
recommended. Otherwise, if there is a chance that there are one or more pages of a sector that contain static data,
then the programming algorithm shown in Figure 27-2 on page 70 is recommended.
Note: The Auto Page Rewrite command uses the same opcodes as the Read-Modify-Write command. If data bytes
are clocked into the device, then the device performs a Read-Modify-Write operation. See the Read-Modify-
Write command description on page 17 for more details.
10.4 Status Register Read
The two-byte Status Register can be used to determine the device's ready/busy status, page size, a Main Memory
Page to Buffer Compare operation result, the sector protection status, Freeze Sector Lockdown status,
erase/program error status, Program/Erase Suspend status, and the device density. The Status Register can be
read at any time, including during an internally self-timed program or erase operation.
To read the Status Register, the CS pin must first be asserted and then the opcode D7h must be clocked into the
device. After the opcode has been clocked in, the device begins outputting Status Register data on the SO pin
during every subsequent clock cycle. After the second byte of the Status Register has been clocked out, the
sequence repeats itself, starting again with the first byte of the Status Register, as long as the CS pin remains
asserted and the clock pin is being pulsed. The data in the Status Register is constantly being updated, so each
repeating sequence can output new data. The RDY/BUSY status is available for both bytes of the Status Register
and is updated for each byte.
Deasserting the CS pin terminates the Status Register Read operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 10-1. Status Register Format – Byte 1
Type 1
Bit
Name
Description
0
1
0
1
Device is busy with an internal operation.
7
RDY/BUSY Ready/Busy Status
R
Device is ready.
Main memory page data matches buffer data.
Main memory page data does not match buffer data.
6
5:2
1
COMP
Compare Result
R
R
R
DENSITY
PROTECT
Density Code
1001 8-Mbit
0
1
0
1
Sector protection is disabled.
Sector Protection Status
Sector protection is enabled.
Device is configured for standard DataFlash page size (264 bytes).
Device is configured for “power of 2” binary page size (256 bytes).
0
PAGE SIZE Page Size Configuration
R
1. R = Readable only.
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Table 10-2. Status Register Format – Byte 2
Type
1
Bit
7
Name
Description
Device is busy with an internal operation.
0
1
0
0
1
0
0
1
0
1
0
1
0
1
RDY/BUSY Ready/Busy Status
R
R
R
R
R
Device is ready.
6
RES
EPE
RES
SLE
Reserved for Future Use
Erase/Program Error
Reserved for future use.
Erase or program operation was successful.
Erase or program error detected.
5
4
Reserved for Future Use
Sector Lockdown Enabled
Reserved for future use.
Sector Lockdown command is disabled.
Sector Lockdown command is enabled.
No program operation has been suspended while using Buffer 2.
A sector is program suspended while using Buffer 2.
No program operation has been suspended while using Buffer 1.
A sector is program suspended while using Buffer 1.
No sectors are erase suspended.
3
Program Suspend Status
(Buffer 2)
2
1
0
PS2
PS1
ES
R
R
R
Program Suspend Status
(Buffer 1)
Erase Suspend
A sector is erase suspended.
1. R = Readable only.
10.4.1 RDY/BUSY Bit
The RDY/BUSY bit is used to determine whether or not an internal operation, such as a program or erase, is in
progress. To poll the RDY/BUSY bit to detect if an internally timed operation is done, new Status Register data
must be continually clocked out of the device until the state of the RDY/BUSY bit changes from a logic 0 to a logic
1.
10.4.2 COMP Bit
The result of the most recent Main Memory Page to Buffer Compare operation is indicated using the COMP bit. If
the COMP bit is a logic 1, then at least one bit of the data in the Main Memory Page does not match the data in the
buffer.
10.4.3 DENSITY Bits
The device density is indicated using the DENSITY bits. For the AT45DB081E, the four bit binary value is 1001.
The decimal value of these four binary bits does not actually equate to the device density; the four bits represent a
combinational code relating to differing densities of DataFlash devices. The DENSITY bits are not the same as the
density code indicated in the JEDEC Device ID information. The DENSITY bits are provided only for backward
compatibility to older generation DataFlash devices.
10.4.4 PROTECT Bit
The PROTECT bit provides information to the user on whether or not the sector protection has been enabled or
disabled, either by the software-controlled method or the hardware-controlled method.
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10.4.5 PAGE SIZE Bit
The PAGE SIZE bit indicates whether the buffer size and the page size of the main memory array is configured for
the “power of 2” binary page size (256 bytes) or the standard DataFlash page size (264 bytes).
10.4.6 EPE Bit
The EPE bit indicates whether the last erase or program operation completed successfully or not. If at least one
byte during the erase or program operation did not erase or program properly, then the EPE bit is set to the logic 1
state. The EPE bit is not set if an erase or program operation aborts for any reason, such as an attempt to erase or
program a protected region or a locked down sector or an attempt to erase or program a suspended sector. The
EPE bit is updated after every erase and program operation.
10.4.7 SLE Bit
The SLE bit indicates whether or not the Sector Lockdown command is enabled or disabled. If the SLE bit is a logic
1, then the Sector Lockdown command is still enabled and sectors can be locked down. If the SLE bit is a logic 0,
then the Sector Lockdown command has been disabled and no further sectors can be locked down.
10.4.8 PS2 Bit
The PS2 bit indicates if a program operation has been suspended while using Buffer 2. If the PS2 bit is a logic 1,
then a program operation has been suspended while Buffer 2 was being used, and any command attempts that
can modify the contents of Buffer 2 are ignored.
10.4.9 PS1 Bit
The PS1 bit indicates if a program operation has been suspended while using Buffer 1. If the PS1 bit is a logic 1,
then a program operation has been suspended while Buffer 1 was being used, and any command attempts that
can modify the contents of Buffer 1 are ignored.
10.4.10 The ES bit
The ES bit indicates whether or not an erase has been suspended. If the ES bit is a logic 1, then an erase
operation (page, block, sector, or chip) has been suspended.
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11
Deep Power-Down
During normal operation, the device is placed in the standby mode to consume less power as long as the CS pin
remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the ability to
place the device into an even lower power consumption state called the Deep Power-Down mode.
When the device is in the Deep Power-Down mode, all commands including the Status Register Read command
are ignored with the exception of the Resume from Deep Power-Down command. Since all commands are ignored,
the mode can be used as an extra protection mechanism against program and erase operations.
Entering the Deep Power-Down mode is done by asserting the CS pin, clocking in the opcode B9h, and then
deasserting the CS pin. Any additional data clocked into the device after the opcode is ignored. When the CS pin is
deasserted, the device enters the Deep Power-Down mode within the maximum time of tEDPD
.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on
an even byte boundary (multiples of eight bits); otherwise, the device aborts the operation and return to the
standby mode once the CS pin is deasserted. Also, the device defaults to the standby mode after a power cycle.
The Deep Power-Down command is ignored if an internally self-timed operation such as a program or erase cycle
is in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has
been completed in order for the device to enter the Deep Power-Down mode.
CS
tEDPD
0
1
2
3
4
5
6
7
SCK
SI
Opcode
1
MSB
0
1
1
1
0
0
1
High-impedance
Active Current
SO
ICC
Standby Mode Current
Deep Power-Down Mode Current
Figure 11-1. Deep Power-Down Timing
AT45DB081E
DS-AT45DB081E–028K–03-2021
37
11.1 Resume from Deep Power-Down
In order to exit the Deep Power-Down mode and resume normal device operation, the Resume from Deep Power-
Down command must be issued. The Resume from Deep Power-Down command is the only command that the
device recognizes while in the Deep Power-Down mode.
To resume from the Deep Power-Down mode, the CS pin must first be asserted and then the opcode ABh must be
clocked into the device. Any additional data clocked into the device after the opcode is ignored. When the CS pin is
deasserted, the device exits the Deep Power-Down mode and return to the standby mode within the maximum
time of tRDPD. After the device has returned to the standby mode, normal command operations such as Continuous
Array Read can be resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not deasserted on an
even byte boundary (multiples of eight bits), then the device aborts the operation and return to the Deep Power-
Down mode.
CS
tRDPD
0
1
2
3
4
5
6
7
SCK
SI
Opcode
1
MSB
0
1
0
1
0
1
1
High-impedance
Active Current
SO
ICC
Standby Mode Current
Deep Power-Down Mode Current
Figure 11-2. Resume from Deep Power-Down Timing
11.2 Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to consume far less power compared to the standby and
Deep Power-Down modes by shutting down additional internal circuitry. Since almost all active circuitry is
shutdown in this mode to conserve power, the contents of the SRAM buffers cannot be maintained. Therefore, any
data stored in the SRAM buffers is lost once the device enters the Ultra-Deep Power-Down mode.
When the device is in the Ultra-Deep Power-Down mode, all commands including the Status Register Read and
Resume from Deep Power-Down commands are ignored. Since all commands are ignored, the mode can be used
as an extra protection mechanism against program and erase operations.
Entering the Ultra-Deep Power-Down mode is done by asserting the CS pin, clocking in the opcode 79h, and then
deasserting the CS pin. Any additional data clocked into the device after the opcode is ignored. When the CS pin is
deasserted, the device enters the Ultra-Deep Power-Down mode within the maximum time of tEUDPD
.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on
an even byte boundary (multiples of eight bits); otherwise, the device aborts the operation and return to the
standby mode once the CS pin is deasserted. Also, the device defaults to the standby mode after a power cycle.
AT45DB081E
DS-AT45DB081E–028K–03-2021
38
The Ultra-Deep Power-Down command is ignored if an internally self-timed operation such as a program or erase
cycle is in progress. The Ultra-Deep Power-Down command must be reissued after the internally self-timed
operation has been completed in order for the device to enter the Ultra-Deep Power-Down mode.
CS
tEUDPD
0
1
2
3
4
5
6
7
SCK
SI
Opcode
0
MSB
1
1
1
1
0
0
1
High-impedance
Active Current
SO
ICC
Standby Mode Current
Ultra-Deep Power-Down Mode Current
Figure 11-3. Ultra-Deep Power-Down Timing
11.3 Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, the CS pin must be pulsed by asserting the CS pin, waiting the
minimum necessary tCSLU time, and then deasserting the CS pin again. To facilitate simple software development,
a dummy byte opcode can also be entered while the CS pin is being pulsed just as in a normal operation like the
Program Suspend operation; the dummy byte opcode is ignored by the device in this case. After the CS pin has
been deasserted, the device exits from the Ultra-Deep Power-Down mode and return to the standby mode within a
maximum time of tXUDPD. If the CS pin is reasserted before the tXUDPD time has elapsed in an attempt to start a new
operation, then that operation is ignored and nothing is performed. The system must wait for the device to return to
the standby mode before normal command operations such as Continuous Array Read can be resumed.
Since the contents of the SRAM buffers cannot be maintained while in the Ultra-Deep Power-Down mode, the
SRAM buffers contains undefined data when the device returns to the standby mode.
CS
t
CSLU
tXUDPD
High-impedance
SO
ICC
Active Current
Standby Mode Current
Ultra-Deep Power-Down Mode Current
Figure 11-4. Exit Ultra-Deep Power-Down
Chip Select Low
AT45DB081E
DS-AT45DB081E–028K–03-2021
39
By asserting the CS pin, waiting the minimum necessary tXUDPD time, and then clocking in the first bit of the next
Opcode command cycle. If the first bit of the next command is clocked in before the tXUDPD time has elapsed, the
device exits Ultra Deep Power Down, however the intended operation is ignored.
CS
t
CSLU
tXUDPD
High-impedance
SO
ICC
Active Current
Standby Mode Current
Ultra-Deep Power-Down Mode Current
Figure 11-5. Exit Ultra-Deep Power-Down (Chip Select Low)
AT45DB081E
DS-AT45DB081E–028K–03-2021
40
12 Buffer and Page Size Configuration
The memory array of DataFlash devices is actually larger than other Serial Flash devices in that extra user-
accessible bytes are provided in each page of the memory array. For the AT45DB081E, there are an extra eight
bytes of memory in each page for a total of an extra 32KB (256-kbits) of user-accessible memory.
Some designers, however, might not want to take advantage of this extra memory and, instead, architect their
software to operate on a “power of 2” binary, logical addressing scheme. To allow this, the DataFlash can be
configured so that the buffer and page sizes are 256 bytes instead of the standard 264 bytes. Also, the
configuration of the buffer and page sizes is reversible and can be changed from 264 bytes to 256 bytes or from
256 bytes to 264 bytes. The configured setting is stored in an internal nonvolatile register so that the buffer and
page size configuration is not affected by power cycles. The nonvolatile register has a limit of 10,000
erase/program cycles; therefore, take care not to switch between the size options more than 10,000 times.
Devices are initially shipped from Adesto with the buffer and page sizes set to 264 bytes. Devices can be ordered
from Adesto pre-configured for the “power of 2” binary size of 256 bytes. For details, see Section 28, Ordering
Information (Standard DataFlash Page Size) on page 71.
To configure the device for “power of 2” binary page size (256 bytes), a four-byte opcode sequence of 3Dh, 2Ah,
80h, and A6h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the
CS pin must be deasserted to initiate the internally self-timed configuration process and nonvolatile register
program cycle. Programming the nonvolatile register takes a time of tEP, during which time the RDY/BUSY bit in the
Status Register indicates that the device is busy. The device does not need to be power cycled after the
configuration process and register program cycle are done in order for the buffer and page size to be configured to
256 bytes.
To configure the device for standard DataFlash page size (264 bytes), a four-byte opcode sequence of 3Dh, 2Ah,
80h, and A7h must be clocked into the device. After the last bit of the opcode sequence has been clocked in, the
CS pin must be deasserted to initiate the internally self-timed configuration process and nonvolatile register
program cycle. Programming the nonvolatile register takes a time of tEP, during which time the RDY/BUSY bit in the
Status Register indicates that the device is busy. The device does not need to be power cycled after the
configuration process and register program cycle are done in order for the buffer and page size to be configured to
264 bytes.
Table 12-1.
Command
Buffer and Page Size Configuration Commands
Byte 1
3Dh
Byte 2
2Ah
Byte 3
80h
Byte 4
A6h
“Power of 2” binary page size (256 bytes)
DataFlash page size (264 bytes)
3Dh
2Ah
80h
A7h
CS
SI
Opcode
Byte 4
3Dh
2Ah
80h
Each transition represents eight bits
Figure 12-1. Buffer and Page Size Configuration
AT45DB081E
DS-AT45DB081E–028K–03-2021
41
13 Manufacturer and Device ID Read
Identification information can be read from the device to enable systems to electronically query and identify the
device while it is in the system. The identification method and the command opcode comply with the JEDEC
Standard for “Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory
Devices”. The type of information that can be read from the device includes the JEDEC-defined Manufacturer ID,
the vendor-specific Device ID, and the vendor-specific Extended Device Information.
The Read Manufacturer and Device ID command is limited to a maximum clock frequency of fCLK. Since not all
Flash devices are capable of operating at very high clock frequencies, design applications to read the identification
information from the devices at a reasonably low clock frequency to ensure that all devices to be used in the
application can be identified properly. Once the identification process is complete, the application can then
increase the clock frequency to accommodate specific Flash devices that are capable of operating at the higher
clock frequencies.
To read the identification information, the CS pin must first be asserted and then the opcode 9Fh must be clocked
into the device. After the opcode has been clocked in, the device begins outputting the identification data on the
SO pin during the subsequent clock cycles. The first byte to be output is the Manufacturer ID, followed by two bytes
of the Device ID information. The fourth byte output is the Extended Device Information (EDI) String Length, which
is 01h indicating that one byte of EDI data follows. After the one byte of EDI data is output, the SO pin goes into a
high-impedance state; therefore, additional clock cycles have no affect on the SO pin and no data is output. As
indicated in the JEDEC Standard, reading the EDI String Length and any subsequent data is optional.
Deasserting the CS pin terminates the Manufacturer and Device ID Read operation and put the SO pin into a high-
impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 13-1.
Manufacturer and Device ID Information
Byte No.
Data Type
Value
1Fh
25h
00h
01h
00h
1
2
3
4
5
Manufacturer ID
Device ID (Byte 1)
Device ID (Byte 2)
[Optional to Read] Extended Device Information (EDI) String Length
[Optional to Read] EDI Byte 1
Table 13-2.
Manufacturer and Device ID Details
Bit
7
Bit
6
Bit
5
Bit
4
Bit
3
Bit
2
Bit
1
Bit
0
Hex
Value
Data Type
Details
JEDEC Assigned Code
Manufacturer ID
1Fh
25h
00h
JEDEC code: 0001 1111 (1Fh for Adesto)
0
0
0
0
0
1
0
1
0
0
1
1
1
1
1
0
Family Code
Density Code
1
Device ID (Byte
1)
Family code: 001 (AT45Dxxx Family)
Density code: 00101 (8-Mbit)
0
Sub Code
0
0
0
Product Variant
Device ID (Byte
2)
Sub code:
000 (Standard Series)
Product variant:00000
0
0
0
AT45DB081E
DS-AT45DB081E–028K–03-2021
42
Table 13-3.
EDI Data
Hex
Valu
e
Bit
7
Bit
6
Bit
5
Bit
3
Bit
2
Bit
1
Bit
0
Byte Number
Bit 4
Details
RFU
0
Device Revision
RFU:
Reserved for Future Use
1
00h
Device revision:00000 (Initial Version)
0
0
0
0
0
0
0
CS
SCK
SI
0
6
7
8
14 15 16
22 23 24
30 31 32
38 39 40
46
Opcode
9Fh
High-impedance
1Fh
25h
00h
01h
EDI
00h
EDI
SO
Manufacturer ID
Device ID
Byte 1
Device ID
Byte 2
String Length
Data Byte 1
Note: Each transition
shown for SI and SO represents one byte (8 bits)
Figure 13-1. Read Manufacturer and Device ID
AT45DB081E
DS-AT45DB081E–028K–03-2021
43
14 Software Reset
In some applications, it might be necessary to prematurely terminate a program or erase cycle early rather than
wait the hundreds of microseconds or milliseconds necessary for the program or erase operation to complete
normally. The Software Reset command allows a program or erase operation in progress to be ended abruptly and
returns the device to an idle state.
To perform a Software Reset, the CS pin must be asserted and a four-byte command sequence of F0h, 00h, 00h,
and 00h must be clocked into the device. Any additional data clocked into the device after the last byte is ignored.
When the CS pin is deasserted, the program or erase operation currently in progress is terminated within a time
tSWRST. Since the program or erase operation might not complete before the device is reset, the contents of the
page being programmed or erased cannot be guaranteed to be valid.
The Software Reset command has no effect on the states of the Sector Protection Register, the Sector Lockdown
Register, or the buffer and page size configuration. The PS2, PS1, and ES bits of the Status Register, however,
are reset back to their default states. If a Software Reset operation is performed while a sector is erase suspended,
the suspend operation aborts and the contents of the page or block being erased in the suspended sector are left
in an undefined state. If a Software Reset is performed while a sector is program suspended, the suspend
operation aborts and the contents of the page that was being programmed and subsequently suspended are
undefined. The remaining pages in the sector retain their previous contents.
The complete four-byte opcode must be clocked into the device before the CS pin is deasserted, and the CS pin
must be deasserted on a byte boundary (multiples of eight bits); otherwise, no reset operation is performed.
Table 14-1.
Software Reset
Command
Byte 1
Byte 2
Byte 3
Byte 4
Software Reset
F0h
00h
00h
00h
CS
SI
F0h
00h
00h
00h
Each transition represents eight bits
Figure 14-1. Software Reset
AT45DB081E
DS-AT45DB081E–028K–03-2021
44
15 Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which
commands can be executed at what times.
Group A commands consist of:
1. Main Memory Page Read
2. Continuous Array Read (SPI)
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
6. Buffer 1 (or 2) Read
Group B commands consist of:
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-In Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-In Erase
9. Main Memory Page Program through Buffer 1 (or 2) with Built-In Erase
10. Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
11. Auto Page Rewrite
12. Read-Modify-Write
Group C commands consist of:
1. Buffer 1 (or 2) Write
2. Status Register Read
3. Manufacturer and Device ID Read
Group D commands consist of:
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
5. Buffer and Page Size Configuration
6. Freeze Sector Lockdown
If a Group A command is in progress (not fully completed), do not start another command in Group A, B, C, or D.
However, during the internally self-timed portion of Group B commands, any command in Group C can be
executed. The Group B commands using Buffer 1 use Group C commands with Buffer 2, and vice versa. Finally,
during the internally self-timed portion of a Group D command, execute only the Status Register Read command.
Most of the commands in Group B can be suspended and resumed, except the Buffer Transfer, Buffer Compare,
Auto Page Rewrite and Read-Modify-Write operations. If a Group B command is suspended, all of the Group A
commands can be executed. See Table 7-4 to determine which of the Group B, Group C, and Group D commands
are allowed.
AT45DB081E
DS-AT45DB081E–028K–03-2021
45
16 Command Tables
Table 16-1.
Command
Read Commands
Opcode
Main Memory Page Read
D2h
01h
03h
0Bh
1Bh
E8h
D1h
D3h
D4h
D6h
Continuous Array Read (Low Power Mode)
Continuous Array Read (Low Frequency)
Continuous Array Read (High Frequency)
Continuous Array Read (High Frequency)
Continuous Array Read (Legacy Command – Not Recommended for New Designs)
Buffer 1 Read (Low Frequency)
Buffer 2 Read (Low Frequency)
Buffer 1 Read (High Frequency)
Buffer 2 Read (High Frequency)
Table 16-2.
Command
Program and Erase Commands
Opcode
Buffer 1 Write
Buffer 2 Write
84h
87h
Buffer 1 to Main Memory Page Program with Built-In Erase
Buffer 2 to Main Memory Page Program with Built-In Erase
Buffer 1 to Main Memory Page Program without Built-In Erase
Buffer 2 to Main Memory Page Program without Built-In Erase
Main Memory Page Program through Buffer 1 with Built-In Erase
Main Memory Page Program through Buffer 2 with Built-In Erase
Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
Page Erase
83h
86h
88h
89h
82h
85h
02h
81h
Block Erase
50h
Sector Erase
7Ch
Chip Erase
C7h + 94h + 80h + 9Ah
Program/Erase Suspend
B0h
D0h
58h
59h
Program/Erase Resume
Read-Modify-Write through Buffer 1
Read-Modify-Write through Buffer 2
AT45DB081E
DS-AT45DB081E–028K–03-2021
46
Table 16-3.
Command
Protection and Security Commands
Opcode
Enable Sector Protection
3Dh + 2Ah + 7Fh + A9h
3Dh + 2Ah + 7Fh + 9Ah
3Dh + 2Ah + 7Fh + CFh
3Dh + 2Ah + 7Fh + FCh
32h
Disable Sector Protection
Erase Sector Protection Register
Program Sector Protection Register
Read Sector Protection Register
Sector Lockdown
3Dh + 2Ah + 7Fh + 30h
35h
Read Sector Lockdown Register
Freeze Sector Lockdown
34h + 55h + AAh + 40h
9Bh + 00h + 00h + 00h
77h
Program Security Register
Read Security Register
Table 16-4.
Command
Additional Commands
Opcode
Main Memory Page to Buffer 1 Transfer
Main Memory Page to Buffer 2 Transfer
Main Memory Page to Buffer 1 Compare
Main Memory Page to Buffer 2 Compare
Auto Page Rewrite
53h
55h
60h
61h
58h
Auto Page Rewrite
59h
Deep Power-Down
B9h
Resume from Deep Power-Down
Ultra-Deep Power-Down
ABh
79h
Status Register Read
D7h
Manufacturer and Device ID Read
Configure “Power of 2” (Binary) Page Size
Configure Standard DataFlash Page Size
Software Reset
9Fh
3Dh + 2Ah + 80h + A6h
3Dh + 2Ah + 80h + A7h
F0h + 00h + 00h + 00h
Table 16-5.
Command
Legacy Commands 1
Opcode
Buffer 1 Read
Buffer 2 Read
54H
56H
52H
68H
57H
Main Memory Page Read
Continuous Array Read
Status Register Read
1. Legacy commands are not recommended for new designs.
AT45DB081E
DS-AT45DB081E–028K–03-2021
47
Table 16-6.
Detailed Bit-level Addressing Sequence for Binary Page Size (256 bytes)
Address Byte Address Byte
Page Size = 256 bytes
Address Byte
Added
Dummy
Bytes
Opcode
Hex
Opcode
Binary
01h
02h
03h
0Bh
1Bh
32h
35h
50h
53h
55h
58h 1
59h 1
58h 2
59h 2
60h
61h
77h
79h
7Ch
81h
82h
83h
84h
85h
86h
87h
88h
89h
9Fh
B9h
ABh
B0h
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
0
0
0
0
0
0
0
0
0
1
1
0
1
0
0
0
1
1
0
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
0
0
1
0
0
1
0
0
0
0
0
0
1
0
1
0
0
0
1
1
1
1
0
0
1
0
0
0
0
1
1
1
1
1
0
0
1
0
0
0
0
0
0
0
1
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
1
1
0
1
0
1
1
0
1
0
1
0
1
1
1
0
1
0
1
0
1
0
1
0
1
1
1
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
A
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
X
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
X
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
X
A
A
A
A
A
A
A
A
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
A
A
A
A
A
X
X
X
X
X
X
X
A
A
X
X
X
N/A
N/A
N/A
1
2
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A
A
A
A
A
X
A
A
X
A
A
A
A
A
A
X
A
A
X
A
A
A
A
A
A
X
A
A
X
A
A
X
A
A
A
X
A
A
X
A
A
X
A
A
A
X
A
A
X
A
A
X
A
A
A
X
A
A
X
A
A
X
A
A
A
X
A
A
X
A
A
X
X
A
A
A
X
A
A
X
A
A
X
A
A
A
X
A
A
X
A
A
X
A
A
A
X
A
A
X
A
A
X
X
A
X
A
A
X
A
X
X
X
X
A
X
A
A
X
A
X
X
X
X
A
X
A
A
X
A
X
X
X
X
A
X
A
A
X
A
X
X
X
X
X
A
X
A
A
X
A
X
X
X
X
A
X
A
A
X
A
X
X
X
X
A
X
A
A
X
A
X
X
A
A
A
X
A
A
X
A
A
A
A
A
X
A
A
X
A
A
X
A
X
A
A
X
A
X
X
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
AT45DB081E
DS-AT45DB081E–028K–03-2021
48
Table 16-6.
Detailed Bit-level Addressing Sequence for Binary Page Size (256 bytes) (continued)
Page Size = 256 bytes
Address Byte
Address Byte
Address Byte
Added
Dummy
Bytes
Opcode
Hex
Opcode
Binary
D0h
D1h
D2h
D3h
D4h
D6h
D7h
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
1
1
0
1
1
0
1
0
1
0
0
1
N/A
N/A
N/A
N/A
N/A
4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
X
A
X
X
X
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
N/A
1
1
N/A
N/A
N/A
N/A
Note: 1. Shown to indicate when the Auto Page Rewrite operation is executed.
2. Shown to indicate when the Read-Modify-Write operation is executed.
3. X = Dummy Bit
Table 16-7.
Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size (264 bytes)
Address Byte Address Byte Address Byte
Page Size = 264 bytes
Added
Dummy
Bytes
Opcode
Hex
Opcode
Binary
01h
02h
03h
0Bh
1Bh
32h
35h
50h
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
1
1
0
0
0
0
0
1
1
1
1
0
0
0
1
1
0
0
0
0
0
0
0
0
0
1
0
0
1
1
1
1
1
0
0
1
0
1
1
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
P
P
P
P
P
P
X
X
X
P
P
P
P
P
X
X
X
P
P
P
P
P
X
X
X
P
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
B
B
B
B
B
X
X
X
N/A
N/A
N/A
1
2
N/A
N/A
N/A
53h
0
1
0
1
0
0
1
1
X
X
X
P
P
P
P
P
P
P
P
P
P
P
X
X
X
X
X
X
X
X
X
N/A
55h
58h 1
59h 1
58h 2
59h 2
60h
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
1
0
1
1
1
1
0
0
0
1
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
1
0
1
0
1
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
P
P
P
P
P
P
P
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
X
X
X
B
B
X
X
X
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
61h
77h
AT45DB081E
DS-AT45DB081E–028K–03-2021
49
Table 16-7.
Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size (264 bytes) (continued)
Page Size = 264 bytes
Address Byte
Address Byte
Address Byte
Added
Dummy
Bytes
Opcode
Hex
Opcode
Binary
79h
7Ch
81h
82h
83h
84h
85h
86h
87h
88h
89h
9Fh
B9h
ABh
B0h
D0h
D1h
D2h
D3h
D4h
D6h
D7h
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
1
1
0
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
0
0
0
1
1
1
1
0
0
1
0
0
0
0
0
0
0
1
1
1
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
0
0
1
0
0
1
1
1
0
1
0
1
0
1
0
1
0
1
1
1
1
0
0
1
0
1
0
0
1
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
P
P
P
P
X
P
P
X
P
P
P
P
P
P
X
P
P
X
P
P
P
P
P
P
X
P
P
X
P
P
P
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
P
P
P
X
P
P
X
P
P
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
X
X
B
X
B
B
X
B
X
X
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
P
X
X
X
X
X
P
X
X
X
X
P
X
X
X
X
P
X
X
X
X
P
X
X
X
X
P
X
X
X
X
P
X
X
X
X
P
X
X
X
X
X
P
X
X
X
X
P
X
X
X
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
P
X
X
X
P
X
X
X
B
B
B
B
N/A
1
1
N/A
N/A
N/A
N/A
Notes: 1. Shown to indicate when the Auto Page Rewrite operation is executed.
2. Shown to indicate when the Read-Modify-Write operation is executed.
3. P = Page Address Bit, B = Byte/Buffer Address Bit, X = Dummy Bit
AT45DB081E
DS-AT45DB081E–028K–03-2021
50
17 Power-On/Reset State
When power is first applied to the device, or when recovering from a reset condition, the output pin (SO) is in a high
impedance state, and a high-to-low transition on the CSB pin is required to start a valid instruction. The SPI mode
(Mode 3 or Mode 0) is automatically selected on every falling edge of CSB by sampling the inactive clock state.
17.1 Power-Up/Power-Down Voltage and Timing Requirements
During power-up, the device must not be READ for at least the minimum tVCSL time after the supply voltage
reaches the minimum VPOR level (VPOR min). While the device is being powered-up, the internal Power-On Reset
(POR) circuitry keeps the device in a reset mode until the supply voltage rises above the minimum Vcc. During this
time, all operations are disabled and the device do not respond to any commands.
If the first operation to the device after power-up is a program or erase operation, then the operation cannot be
started until the supply voltage reaches the minimum VCC level and an internal device delay has elapsed. This
delay is a maximum time of tPUW. After the tPUW time, the device is in the standby mode if CSB is at logic high or
active mode if CSB is at logic low. For the case of Power-down then Power-up operation, or if a power interruption
occurs (such that VCC drops below VPOR max), the Vcc of the Flash device must be maintained below VPWD for at
least the minimum specified TPWD time. This is to ensure the Flash device resets properly after a power
interruption.
Table 17-1.
Symbol
Voltage and Timing Requirements for Power-Up/Power-Down
Parameter
Min
Max
Units
V
1
VPWD
VCC for device initialization
1.0
tPWD(1)
tVCSL
tVR(1)
VPOR
tPUW
Minimum duration for device initialization
Minimum VCC to chip select low time for Read command
VCC rise time
300
70
µs
µs
1
500000
µs/V
V
Power on reset voltage
1.45
1.6
3
Power up delay time before Program or Erase is allowed
ms
1. Not 100% tested (value guaranteed by design and characterization).
VCC
VPOR max
tPUW
Full Operation Permitted
Read Operation
Permitted
tVCSL
Max VPWD
tPWD
tVR
Time
Figure 17-1. Power-Up Timing
AT45DB081E
DS-AT45DB081E–028K–03-2021
51
18 System Considerations
The serial interface is controlled by the Serial Clock (SCK), Serial Input (SI), and Chip Select (CS) pins. These
signals must rise and fall monotonically and be free from noise. Excessive noise or ringing on these pins can be
misinterpreted as multiple edges and cause improper operation of the device. PCB traces must be kept to a
minimum distance or appropriately terminated to ensure proper operation. If necessary, decoupling capacitors can
be added on these pins to provide filtering against noise glitches.
As system complexity continues to increase, voltage regulation is becoming more important. A key element of any
voltage regulation scheme is its current sourcing capability. Like all Flash memories, the peak current for
DataFlash devices occurs during the programming and erasing operations. The supply voltage regulator needs to
be able to supply this peak current requirement. An under specified regulator can cause current starvation. Besides
increasing system noise, current starvation during programming or erasing can lead to improper operation and
possible data corruption.
AT45DB081E
DS-AT45DB081E–028K–03-2021
52
19 Electrical Specifications
19.1 Absolute Maximum Ratings*
Notice: Stresses beyond those listed under “Absolute Maximum
Ratings” might cause permanent damage to the device. The
“Absolute Maximum Ratings” are stress ratings only and
functional operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods
might affect device reliability. Voltage extremes referenced in
the “Absolute Maximum Ratings” are intended to
Temperature under Bias . . . . . . . -55°C to +125°C
Storage Temperature. . . . . . . . . . -65°C to +150°C
All Input Voltages
(except VCC but including NC pins)
with Respect to Ground. . . . . -0.6 V to VCC + 0.6 V
accommodate short duration undershoot/overshoot
conditions and does not imply or guarantee functional device
operation at these levels for any extended period of time.
All Output Voltages
with Respect to Ground. . . . . -0.6 V to VCC + 0.6 V
19.2 DC and AC Operating Range
AT45DB081E
-40°C to 85°C
1.7 V to 3.6 V
Operating Temperature (Case)
VCC Power Supply
Industrial
AT45DB081E
DS-AT45DB081E–028K–03-2021
53
19.3 DC Characteristics
1.7 V to 3.6 V
Typ
2.3 V to 3.6 V
Symbol Parameter
Condition
Units
Min
Max
Min
Typ
Max
Ultra-Deep Power-Down
Current
CS= VCC. All other inputs at
0V or VCC
IUDPD
0.4
4.5
25
1
0.4
1
µA
µA
µA
Deep Power-Down
Current
CS= VCC. All other inputs at
0V or VCC
IDPD
12
40
6
12
40
CS= VCC. All other inputs at
0V or VCC
ISB
Standby Current
25
Active Current, Low
Power Read (01h)
Operation
f = 1 MHz; IOUT = 0mA
f = 15 MHz; IOUT = 0mA
6
7
9
6
7
9
mA
mA
(1)(2)
(1)(2)
ICC1
10
10
f = 50 MHz; IOUT = 0mA
f = 85 MHz; IOUT = 0mA
10
12
12
15
10
12
12
15
mA
mA
Active Current,
Read Operation
ICC2
Active Current,
Program Operation
ICC3
CS = VCC
CS = VCC
14
8
16
12
14
8
16
12
mA
mA
Active Current,
Erase Operation
ICC4
ILI
Input Load Current
All inputs at CMOS levels
All inputs at CMOS levels
1
1
1
1
µA
µA
ILO
Output Leakage Current
VCC
0.3
x
VCC
0.3
x
VIL
Input Low Voltage
V
VCC
0.7
x
VCC
0.6
+
VCC
0.7
x
VCC
0.6
+
VIH
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
V
VOL
VOH
IOL = 100µA
IOH = -100µA
0.4
0.4
VCC
0.2 V
-
VCC -
0.2 V
Notes: 1. Typical values measured at 1.8 V at 25°C for the 1.65 V to 3.6 V range.
2. Typical values measured at 3.0 V at 25°C for the 2.3 V to 3.6 V range.
AT45DB081E
DS-AT45DB081E–028K–03-2021
54
19.4 AC Characteristics
1.7 V to 3.6 V
2.3 V to 3.6 V
Symbol
Parameter
Min
Max
Min
Max
Units
fSCK
SCK Frequency
85
85
50
133
133
50
MHz
MHz
MHz
fCAR1
fCAR2
SCK Frequency for Continuous Read (0x0B)
SCK Frequency for Continuous Read (0x03) (Low Frequency)
SCK Frequency for Continuous Read (Low Power Mode – 01h
Opcode)
fCAR3
20
85
20
MHz
fCAR4
tWH
SCK Frequency for Continuous Read (0x1B)
SCK High Time
133
MHz
ns
4
4
4
4
tWL
SCK Low Time
ns
1
tSCKR
SCK Rise Time, Peak-to-peak
SCK Fall Time, Peak-to-peak
Minimum CS High Time
0.1
0.1
30
6
0.1
0.1
30
5
V/ns
V/ns
ns
1
tSCKF
tCS
tCSS
tCSH
tSU
tH
CS Setup Time
ns
CS Hold Time
5
5
ns
Data In Setup Time
2
2
ns
Data In Hold Time
1
1
ns
tHO
Output Hold Time
0
0
ns
1
tDIS
Output Disable Time
8
7
6
6
ns
tV
Output Valid
ns
tWPE
tWPD
tLOCK
WP Low to Protection Enabled
WP High to Protection Disabled
Freeze Sector Lockdown Time (from CS High)
CS High to Ultra-Deep Power-Down
Minimum CS Low Time to Exit Ultra-Deep Power-Down
Exit Ultra-Deep Power-Down Time
CS High to Deep Power-Down
Resume from Deep Power-Down Time
Page to Buffer Transfer Time
Page to Buffer Compare Time
RESET Pulse Width
1
1
µs
µs
µs
µs
ns
1
1
200
3
200
3
1
tEUDPD
tCSLU
20
20
tXUDPD
100
3
100
3
µs
µs
µs
µs
µs
µs
µs
µs
1
tEDPD
tRDPD
tXFR
tCOMP
tRST
35
35
200
200
200
200
10
10
tREC
RESET Recovery Time
1
1
tSWRST
Software Reset Time
50
50
1. Values are based on device characterization, not 100% tested in production.
AT45DB081E
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55
19.5 Program and Erase Characteristics
1.7 V to 3.6 V
2.3 V to 3.6 V
Symbol
Parameter
Units
Min
Typ
15
2
Max
55
4
Min
Typ
15
2
Max
55
4
tEP
tP
Page Erase and Programming Time (256/264 bytes)
Page Programming Time
Byte Programming Time
Page Erase Time
ms
ms
µs
ms
ms
s
tBP
tPE
tBE
tSE
tCE
8
8
12
30
.7
50
75
1.3
20
20
40
5
12
30
.7
50
75
1.3
20
20
40
5
Block Erase Time
Sector Erase Time
Chip Erase Time
10
10
20
3
10
10
20
3
s
Program
tSUSP
Suspend Time
Erase
µs
Program
tRES
Resume Time
µs
µs
Erase
3
5
3
5
tOTPP
OTP Security Register Program Time
200
500
200
500
Notes: 1. Values are based on device characterization, not 100% tested in production.
2. Not 100% tested (value guaranteed by design and characterization).
AT45DB081E
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20 Input Test Waveforms and Measurement Levels
0.9VCC
AC
AC
Driving
Levels
VCC/2
Measurement
Level
0.1VCC
tR, tF < 2ns (10% to 90%)
21 Output Test Load
Device
Under
Test
30pF
AT45DB081E
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57
22 Using the RapidS Function
To take advantage of the RapidS function's ability to operate at higher clock frequencies, a full clock cycle must be
used to transmit data back and forth across the serial bus. The DataFlash is designed to always clock its data out
on the falling edge of the SCK signal and clock data in on the rising edge of SCK.
For full clock cycle operation to be achieved, when the DataFlash is clocking data out on the falling edge of SCK,
the host controller must wait until the next falling edge of SCK to latch the data in. Similarly, the host controller must
clock its data out on the rising edge of SCK in order to give the DataFlash a full clock cycle to latch the incoming
data in on the next rising edge of SCK.
Slave CS
1
8
1
8
1
2
3
4
5
6
7
2
3
4
5
6
7
SCK
MOSI
MISO
B
E
A
C
D
MSB
LSB
BYTE-MOSI
H
G
I
F
MSB
LSB
BYTE-SO
MOSI = Master Out, Slave In
MISO = Master In, Slave Out
The Master is the host controller and the Slave is the DataFlash.
The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK.
The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.
A. Master clocks out first bit of BYTE-MOSI on the rising edge of SCK
B. Slave clocks in first bit of BYTE-MOSI on the next rising edge of SCK
C. Master clocks out second bit of BYTE-MOSI on the same rising edge of SCK
D. Last bit of BYTE-MOSI is clocked out from the Master
E. Last bit of BYTE-MOSI is clocked into the slave
F. Slave clocks out first bit of BYTE-SO
G. Master clocks in first bit of BYTE-SO
H. Slave clocks out second bit of BYTE-SO
I. Master clocks in last bit of BYTE-SO
Figure 22-1. RapidS Mode Timing
SI (INPUT)
CMD
8-bits
8-bits
8-bits
X X X X X X X X X X X X X X X X X X X X X X X X
LSB
MSB
4 Dummy Bits
Page Address
(A19 - A8)
Byte/Buffer Address
(A7 - A0/BFA7 - BFA0)
Figure 22-2. Command Sequence for Read/Write Operations for Page Size 256 bytes
(Except Status Register Read, Manufacturer and Device ID Read)
AT45DB081E
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SI (INPUT)
CMD
8-bits
8-bits
8-bits
X X X X X X X X X X X X X X X X X X X X X X X X
LSB
MSB
3
Page Address
(PA11 - PA0)
Byte/Buffer Address
(BA8 - BA0/BFA8 - BFA0)
Dummy Bits
Figure 22-3. Command Sequence for Read/Write Operations for Page Size 264 bytes
(Except Status Register Read, Manufacturer and Device ID Read)
AT45DB081E
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59
23 AC Waveforms
Four different timing waveforms are shown in Figure 23-1 through Figure 23-4. Waveform 1 shows the SCK signal
being low when CS makes a high-to-low transition and Waveform 2 shows the SCK signal being high when CS
makes a high-to-low transition. In both cases, output SO becomes valid while the SCK signal is still low (SCK low
time is specified as tWL). Timing Waveforms 1 and 2 conform to RapidS serial interface but for frequencies up to 85
MHz. Waveforms 1 and 2 are compatible with SPI Mode 0 and SPI Mode 3, respectively.
Waveform 3 and 4 illustrate general timing diagram for RapidS serial interface. These are similar to Waveform 1
and 2, except that output SO is not restricted to become valid during the tWL period. These timing waveforms are
valid over the full frequency range (maximum frequency = 85 MHz) of the RapidS serial case.
tCS
CS
tCSS
tWH
tWL
tCSH
SCK
SO
SI
tV
tHO
tDIS
High-impedance
tSU
High-impedance
Valid Out
tH
Valid In
Figure 23-1. Waveform 1 = SPI Mode 0 Compatible
tCS
CS
SCK
SO
tCSS
tWL
tWH
tCSH
tV
tHO
tDIS
High Z
High-impedance
Valid Out
tH
tSU
Valid In
SI
Figure 23-2. Waveform 2 = SPI Mode 3 Compatible
AT45DB081E
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tCS
CS
SCK
SO
tCSS
tWH
tWL
tCSH
tV
tHO
tDIS
High-impedance
tSU
High-impedance
Valid Out
tH
SI
Valid In
Figure 23-3. Waveform 3 = RapidS Mode 0
tCS
CS
SCK
SO
tCSS
tWL
tWH
tCSH
tV
tHO
tDIS
High Z
High-impedance
Valid Out
tH
tSU
Valid In
SI
Figure 23-4. Waveform 4 = RapidS Mode 3
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24 Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
WP
Flash Memory Array
Page (256/264 bytes)
Buffer 1 (256/264 bytes)
Buffer 2 (256/264 bytes)
SCK
CS
RESET
VCC
I/O Interface
GND
SI
SO
Figure 24-1. Block Diagram
Completes Writing into Selected Buffer
CS
Binary Page Size
16 Dummy Bits + BFA7-BFA0
CMD
X
X
BFA7-0
n
n + 1
Last Byte
SI (Input)
n
= 1st byte read
Each transition represents eight bits
n+1 = 2nd byte read
Figure 24-2. Buffer Write
Starts Self-timed Erase/Program Operation
CS
Binary Page Size
A19-A8 + 8 Dummy Bits
CMD
XXXX,A19-A16
A15-A8
XXXX XXXX
SI (Input)
Each transition represents eight bits
Figure 24-3. Buffer to Main Memory Page Program
AT45DB081E
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25 Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
Flash Memory Array
Page (256/264 bytes)
Main Memory
Page To
Main Memory
Page To
Buffer 2
Buffer 1
Buffer 1 (256/264 bytes)
Buffer 2 (256/264 bytes)
Buffer 1
Read
Main Memory
Page Read
Buffer 2
Read
I/O Interface
SO
Figure 25-1. Block Diagram
CS
Address for Binary Page Size
XXXXX,A19-A16 A15-A8
A7-A0
CMD
XXX,PA11-7 PA6-0, BA8
BA7-0
X
X
SI (Input)
4 Dummy Bytes
SO (Output)
n
n + 1
Figure 25-2. Main Memory Page Read
Starts Reading Page Data into Buffer
CS
Binary Page Size
XXXX, A19-A16
+
A15- A8 + 8 Dummy Bits
CMD
XXX, PA11-7
PA6-0, XX XXXX XXXX
SI (Input)
SO (Output)
Figure 25-3. Main Memory Page to Buffer Transfer
Data From the selected Flash Page is read into either SRAM Buffer
AT45DB081E
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CS
Address for Binary Page Size
16 Dummy Bits + BFA7-BFA0
CMD
XXXX XXXX XXXX XXXX
BFA7-0
X
SI (Input)
No Dummy Byte (opcodes D1H and D3H)
1 Dummy Byte (opcodes D4H and D6H)
SO (Output)
n
n + 1
Each transition represents eight bits
Figure 25-4. Buffer Read
AT45DB081E
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64
26 Detailed Bit-level Read Waveforms: RapidS Mode 0/Mode 3
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34
62 63 64 65 66 67 68 69 70 71 72
SCK
SI
Opcode
Address Bits
32 Dummy Bits
1
1
1
0
1
0
0
0
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
MSB
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Bit 0 of
Page n+1
Bit 2048/2112
of Page n
Figure 26-1. Continuous Array Read Timing (Legacy Opcode E8h)
CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Opcode
Address Bits A19 - A0
Dummy Bits
X
0
0
0
0
1
0
1
1
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
X
MSB
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-2. Continuous Array Read Timing (Opcode 0Bh)
CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
Opcode
Address Bits A19-A0
0
0
0
0
0
0
1
1
A
A
A
A
A
A
A
A
A
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-3. Continuous Array Read Timing (Opcode 01h or 03h)
AT45DB081E
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65
CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34
62 63 64 65 66 67 68 69 70 71 72
Opcode
Address Bits
32 Dummy Bits
1
1
0
1
0
0
1
0
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
MSB
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-4. Main Memory Page Read TIming (Opcode D2h)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SCK
Address Bits
Binary Page Size = 16 Dummy Bits + BFA7-BFA0
Standard DataFlash Page Size =
15 Dummy Bits + BFA8-BFA0
Dummy Bits
Opcode
1
1
0
1
0
1
0
0
X
X
X
X
X
X
A
A
A
X
X
X
X
X
X
X
X
SI
MSB
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-5. Buffer Read Timing (Opcode D4h or D6h)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
Address Bits
Binary Page Size = 16 Dummy Bits + BFA7-BFA0
Standard DataFlashPage Size =
Opcode
15 Dummy Bits + BFA8-BFA0
1
1
0
1
0
0
0
1
X
X
X
X
X
X
A
A
A
SI
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-6. Buffer Read – Low Frequency (Opcode D1h or D3h)
AT45DB081E
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CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
Opcode
Dummy Bits
0
0
1
1
0
0
1
0
X
X
X
X
X
X
X
X
X
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-7. Read Sector Protection Register Timing (Opcode 32h)
CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
Opcode
Dummy Bits
0
0
1
1
0
1
0
1
X
X
X
X
X
X
X
X
X
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-8. Read Sector Lockdown Register Timing (Opcode 35h)
CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
Opcode
Dummy Bits
0
1
1
1
0
1
1
1
X
X
X
X
X
X
X
X
X
MSB
MSB
Data Byte 1
High-impedance
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
Figure 26-9. Read Security Register Timing (Opcode 77h)
AT45DB081E
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CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Opcode
1
1
0
1
0
1
1
1
MSB
Status Register Data
Status Register Data
High-impedance
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
SO
MSB
MSB
MSB
Figure 26-10. Status Register Read Timing (Opcode D7h)
CS
SCK
SI
0
6
7
8
14 15 16
22 23 24
30 31 32
38 39 40
46
Opcode
9Fh
High-impedance
1Fh
25h
00h
01h
EDI
00h
EDI
SO
Manufacturer ID
Device ID
Byte 1
Device ID
Byte 2
String Length
Data Byte 1
Note: Each transition
shown for SI and SO represents one byte (8 bits)
Figure 26-11. Manufacturer and Device Read Timing (Opcode 9Fh)
CS
t
t
CSS
REC
SCK
RESET
t
RST
High Impedance
High Impedance
SO (Output)
SI (Input)
Figure 26-12. Reset Timing
Note: The CS signal must be in the high state before the RESET signal is deasserted.
AT45DB081E
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27 Auto Page Rewrite Flowchart
START
Provide Address
and Data
Buffer Write
(84h, 87h)
Main Memory Page Program
through Buffer
(82h, 85h)
Buffer To Main
Memory Page Program
(83h, 86h)
END
Figure 27-1. Algorithm for Programming or Re-programming of the Entire Array Sequentially
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the
array page-by-page.
2. A page can be written using either a Main Memory Page Program operation or a buffer write operation
followed by a buffer to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm is repeated sequentially for
each page within the entire array.
AT45DB081E
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START
Provide Address of
Page to Modify
Main Memory Page
to Buffer Transfer
(53h, 55h)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
Buffer Write
(84h, 87h)
Main Memory Page Program
through Buffer
(82h, 85h)
Buffer to Main
Memory Page Program
(83h, 86h)
(2)
Auto Page Rewrite
(58h, 59h)
Increment Page
(2)
Address Pointer
END
Figure 27-2. Algorithm for Programming or Re-programming of the Entire Array Randomly
Notes: 1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within
every 50,000 cumulative page erase and program operations.
2. A page address pointer must be maintained to indicate which page is to be rewritten. The Auto Page
Rewrite command must use the address specified by the page address pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications can choose to
wait until 50,000 cumulative page erase and program operations have accumulated before rewriting all
pages of the sector.
AT45DB081E
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28 Ordering Information (Standard DataFlash Page Size)
28.1 Ordering Detail
A T 4 5 D B 0 8 1 E - S S H N - B
Designator
Shipping Carrier Option
B
T
Y
= Bulk (tubes)
= Tape and reel
= Trays
Product Family
45DB = DataFlash
Operating Voltage
= 1.7 V minimum (1.7 V to 3.6 V)
N
Device Density
08 = 8-Mbit
Device Grade
H
= Green, NiPdAu lead finish,
Industrial temperature range
(–40°C to +85°C)
Interface
1 = Serial
U = Green, Matte Sn or Sn alloy,
Industrial temperature range
(–40°C to +85°C)
Device Revision
Package Option
SS = 8-lead, 0.150” narrowde SOIC
S
= 8-lead, 0.208” wide SOIC
= 8-pad, 5 x 6 x 0.6 mm UDFN
= 8-ball, 2.3 x 1.6 mm WLCSP
M
U
DWF = Die in Wafer Form
28.2 Ordering Codes (Standard DataFlash Page Size)
Ordering Code
Package
Lead Finish
Operating Voltage
fSCK
Device Grade
AT45DB081E-SSHN-B 1
AT45DB081E-SSHN-T 1
AT45DB081E-SHN-B 1
AT45DB081E-SHN-T 1
AT45DB081E-MHN-Y 1
AT45DB081E-MHN-T 1
AT45DB081E-UUN-T 1,3
AT45DB081E-DWF(2)
8S1
Industrial
8S2
NiPdAu
1.7 V to 3.6 V
85 MHz
(-40°C to 85°C)
8 MA1
CS8-8A
DWF
Notes: 1. The shipping carrier suffix is not marked on the device.
2. Contact Dialog Semiconductor for mechanical drawing or Die Sales information.
3. Contact Dialog Semiconductor for availability.
Package Type
8S1
8-lead 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead 0.208" wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
8S2
8 MA1
CS8-8A
DWF
8-pad (5 x 6 x 0.6 mm body), Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead (UDFN)
8-ball (2 x 4 Array) 2.3 x 1.6 mm Wafer Level Chip Scale Package
Die in Wafer Form
AT45DB081E
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71
28.3 Ordering Codes (Binary Page Size)
Ordering Code
Package
8S1
Lead Finish
Operating Voltage
fSCK
Device Grade
AT45DB081E-SSHN2B-T 1,2
AT45DB081E-SHN2B-T 1,2
AT45DB081E-MHN2B-T 1,2
AT45DB081E-UUN2B-T 1,2,3
Industrial
8S2
NiPdAu
1.7 V to 3.6 V
85 MHz
(-40°C to 85°C)
8 MA1
CS8-8A
Notes: 1. The shipping carrier suffix is not marked on the device.
2. Parts ordered with suffix code ‘2B’ are shipped in tape and reel (T&R) with the page size set to
256 bytes. This option is only available for shipping in T&R (-T).
3. Contact Dialog Semiconductor for availability.
Package Type
8S1
8-lead 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead 0.208" wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
8-pad (5 x 6 x 0.6 mm body), Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead (UDFN)
8-ball (2 x 4 Array) 2.3 x 1.6 mm Wafer Level Chip Scale Package
8S2
8 MA1
CS8-8A
28.4 Ordering Codes (Reserved)
Ordering Code
Package
Lead Finish
Operating Voltage
fSCK
Device Grade
AT45DB081E-SSHNHA-T 1,2
AT45DB081E-SHNHA-T 1,2
AT45DB081E-SSHNHC-T 1,3
AT45DB081E-SHNHC-T 1,3
8S1
8S2
8S1
8S2
Industrial
NiPdAu
1.7 V to 3.6 V
85 MHz
(-40°C to 85°C)
Notes: 1. The shipping carrier suffix is not marked on the device.
2. Parts ordered with suffix code ‘HA’ are shipped in tape & reel (T&R) only with the page size set to 264 bytes.
3. Parts ordered with suffix code ‘HC’ are shipped in tape & reel (T&R) only with the page size set to 256 bytes.
Contact Dialog Semiconductor for a description of these ‘Reserved’ codes.
Package Type
8S1
8S2
8-lead 0.150" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead 0.208" wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
AT45DB081E
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72
29 Packaging Information
29.1 8S1 – 8-lead JEDEC SOIC
C
1
E
E1
L
N
Ø
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
–
–
NOTE
SYMBOL
A1
A
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.05
3.99
6.20
C
D
E1
E
e
–
–
D
–
–
SIDE VIEW
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
1.27 BSC
L
0.40
0°
–
–
1.27
8°
Ø
6/22/11
DRAWING NO. REV.
TITLE
GPC
8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
SWB
8S1
G
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73
29.2 8S2 – 8-lead EIAJ SOIC
C
1
E
E11
L
N
θ
TOOPP VVIEW
END VIEEWW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0°
MAX
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8°
NOM
NOTE
SYMBOL
A11
A
A1
b
4
4
C
D
E1
E
D
2
L
SIDE VVIIEEWW
θ
e
1.27 BSC
3
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. Determines the true geometric position.
4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
4/15/08
DRAWING NO.
REV.
GPC
TITLE
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
STN
8S2
F
AT45DB081E
DS-AT45DB081E–028K–03-2021
74
29.3 8 MA1 – 8-pad UDFN
E
C
Pin 1 ID
SIDE VIEW
D
y
TOP VIEW
A1
A
K
E2
Option A
0.45
Pin #1
8
1
2
3
Pin #1 Notch
(0.20 R)
(Option B)
Chamfer
(C 0.35)
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
NOTE
SYMBOL
7
A
0.45
0.55
0.60
e
D2
A1
b
0.00
0.35
0.02
0.40
0.152 REF
5.00
4.00
6.00
3.40
1.27
0.60
–
0.05
0.48
6
C
D
D2
E
4.90
3.80
5.90
3.20
5.10
4.20
6.10
3.60
5
4
b
BOTTOM VIEW
L
E2
e
L
0.50
0.00
0.20
0.75
0.08
–
y
K
–
4/15/08
GPC
YFG
DRAWING NO.
TITLE
REV.
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
8MA1
D
AT45DB081E
DS-AT45DB081E–028K–03-2021
75
29.4 CS8-8A – 8-ball WLCSP
TOP VIEW
1.605 0.05
2
1
0.52 (MAX)
0.173 0.017
A
B
C
D
Pin 1 ID
SIDE VIEW
0.022 0.005
0.3 0.015
BOTTOM VIEW
Ø0.303 0.03 (8X)
2
1
A
COMMON DIMENSIONS
(Unit of Measure = mm)
B
C
Pin Assignment Matrix
A
B
C
D
SCK
RESET
SI
CS
WP
1
2
D
VCC
GND
SO
+0.03
0.553
(0.25)
-0
0.5 0.015
10/15/15
GPC
DRAWING NO.
TITLE
REV.
CS8-8A, 8-ball ((2 x 4 Array), Wafer Level Chip Scale
YFG
CS8-8A
A
Package (WLCSP)
AT45DB081E
DS-AT45DB081E–028K–03-2021
76
30 Revision History
Doc. Rev.
Date
Comments
DS-45DB081E-
6/2013
9/2013
Initial document release.
028A
Updated Auto Page Rewrite cycle to 50,000 cumulative page erase/program
operations. Added reserved part order codes. Updated DC and AC parameters and
Power Up Timing. Added Exit Ultra-Deep Power-Down (Chip Select Low). Updated ICC3,
ICC4, and VOL conditions. Changed datasheet status from advanced to preliminary.
DS-45DB081E-
028B
DS-45DB081E-
028C
Updated spec for Input High Voltage (Max) to VCC + 0.6 V. Corrected Low Power Read
Option (up to 15 MHz).
10/2013
1/2014
2/2014
4/2014
5/2015
DS-45DB081E-
028D
Updated spec for Minimum Operating Voltage from 1.65 V to 1.7 V.
DS-45DB081E-
028E
Updated AC, DC and Program and Erase characteristics. Changed datasheet status
from preliminary to complete.
DS-45DB081E-
028F
Updated tPE and tEP parameters.
DS-45DB081E-
028G
Expanded explanation of Power up/Power down (Section 16). Added Die in Wafer Form
package option. Updated Table 6-4.
Added WLCSP package option. Updated Condition description for IDPD, ISB, Icc1 and Icc2
Added footnote to Icc1, tDIS, tEUDPD, tEPD. Updated footnote 2 on Table 18.3. Removed
footnotes from Table 18.5. Updated Power Up Timing diagram.
.
DS-45DB081E-
028H
3/2016
1/2017
7/2020
DS-45DB081E-028I
DS-45DB081E-028J
Added patent information.
Updated format and layout. Copy edited throughout (no change to technical content).
For packages ending in SHN-B and SHN-T, removed link to note in the Ordering Codes
tables that states: “Not recommended for new designs. Use the 8S1 package option.”
Updated notes 2 and 3 for Table 28.2.
Updated notes 2 and 4 for Table 28.3.
Updated contact information under Table 28.4.
DS-45DB081E-
028K
3/2021
AT45DB081E
DS-AT45DB081E–028K–03-2021
77
Corporate Office
California | USA
Adesto Headquarters
3600 Peterson Way
Santa Clara, CA 95054
Phone: (+1) 408.400.0578
Copyright © 2021 Adesto Technologies. All rights reserved. DS-AT45DB081E–028K–03-2021
Adesto, the Adesto logo, CBRAM and DataFlash are trademarks or registered trademarks of Adesto Technologies Corporation in the United States and other countries. Other company, product, and service
names may be trademarks or service marks of others. Adesto products are covered by one or more patents listed at http://www.adestotech.com/patents.
Disclaimer: Adesto Technologies Corporation (“Adesto”) makes no warranties of any kind, other than those expressly set forth in Adesto’s Terms and Conditions of Sale at
http://www.adestotech.com/terms-conditions. Adesto assumes no responsibility or obligations for any errors which may appear in this document, reserves the right to change devices or specifications
herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by Adesto
herewith or in connection with the sale of Adesto products, expressly or by implication. Adesto’s products are not authorized for use in medical applications (including, but not limited to, life support systems
and other medical equipment), weapons, military use, avionics, satellites, nuclear applications, or other high risk applications (e.g., applications that, if they fail, can be reasonably expected to result in
personal injury or death) or automotive applications, without the express prior written consent of Adesto.
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