1N5268CURHR [DIGITRON]
Zener Diode;
| 型号： | 1N5268CURHR |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Zener Diode |
| 文件： | 总4页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5221B(UR)-1N5281B(UR)
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Available in surface mount by adding suffix “UR”
Devices with guaranteed limits on all six parameters are indicated by suffix A for ±10% tolerance, suffix B for a ±5% tolerance, suffix C for a 2% tolerance and suffix D for a 1%
tolerance.
MAXIMUM RATINGS
Operating and Storage Temperature
DC Power Dissipation
-65°C to + 200°C
500 mW
Power Derating
Forward Voltage @ 200mA
3.33 mW/C° above 25°C
1.1 Volts
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Max Reverse Leakage Current
A, B, & D Suffix
Max Zener Impedance
A&B Suffix Only(2)
Test
Current
IZT
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
Non Suffix
Nominal
Zener Voltage
VZ @ IZT
Only
IR
µA
VR
Volts
Part Number (1)
mA
IR @ VR Used For
Suffix A
@
ZZT @ IZT
ZZT @ IZK=0.25mA
Ohms
Volts
αVZ (%/°C)(3)
Ohms
µA
A
B,C &D
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
2.4
2.5
2.7
2.8
3.0
20
20
20
20
20
30
30
30
30
29
1200
1250
1300
1400
1600
100
100
75
75
50
0.95
1.0
1.0
1.0
1.0
1.0
200
200
150
150
100
-0.085
-0.085
-0.080
-0.080
-0.075
0.95
0.95
0.95
0.95
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
3.3
3.6
3.9
4.3
4.7
20
20
20
20
20
28
24
23
22
19
1600
1700
1900
2000
1900
25
15
10
5.0
5.0
0.95
0.95
0.95
0.95
1.9
1.0
1.0
1.0
1.0
2.0
100
100
75
50
50
-0.070
-0.065
-0.060
±0.055
±0.030
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
5.1
5.6
6.0
6.2
6.8
20
20
20
20
20
17
11
7.0
7.0
5.0
1600
1600
1600
1000
750
5.0
5.0
5.0
5.0
3.0
1.9
2.9
3.3
3.8
4.8
2.0
3.0
3.5
4.0
5.0
50
50
50
50
30
±0.030
+0.038
+0.038
+0.045
+0.050
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
20
20
20
20
20
6.0
8.0
8.0
10
17
22
30
13
15
16
17
19
21
23
25
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5.7
6.2
6.2
6.7
7.6
8.0
8.7
9.4
9.5
10.5
11.4
12.4
13.3
13.3
14.3
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
30
30
30
30
30
30
10
10
10
10
10
10
10
10
10
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
14
15
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
22
24
25
27
28
5.6
5.2
5.0
4.6
4.5
29
33
35
41
44
600
600
600
600
600
0.1
0.1
0.1
0.1
0.1
16.2
17.1
18.1
20
17
18
19
21
21
10
10
10
10
10
+0.087
+0.088
+0.089
+0.090
+0.091
20
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
30
33
36
39
43
4.2
3.8
3.4
3.2
3.0
49
58
70
80
93
600
700
700
800
900
0.1
0.1
0.1
0.1
0.1
22
24
26
29
31
23
25
27
30
33
10
10
10
10
10
+0.091
+0.092
+0.093
+0.094
+0.095
Rev. 20190114
1N5221B(UR)-1N5281B(UR)
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
Max Reverse Leakage Current
Max Zener Impedance
A&B Suffix Only(2)
A, B, & D Suffix
Non Suffix
Test
Nominal
Current
Only
Zener Voltage
IZT
IR
µA
VR
Volts
IR @ VR Used For
Suffix A
αVZ (%/°C)(3)
VZ @ IZT
Volts
Part Number (1)
mA
@
ZZT @ IZT
ZZT @ IZK=0.25mA
µA
Ohms
Ohms
A
B,C&D
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
47
51
56
60
62
68
75
82
87
2.7
2.5
2.2
2.1
2.0
1.8
1.7
1.5
1.4
1.4
1.3
1.1
1.0
0.95
0.90
105
125
150
170
185
230
270
330
370
400
500
750
900
1100
1300
1000
1100
1300
1400
1400
1600
1700
2000
2200
2300
2600
3000
4000
4500
4500
0.1
34
37
41
44
45
49
53
59
65
66
72
80
86
94
101
36
39
43
46
47
52
56
62
68
69
76
84
91
99
106
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
+0.098
+0.099
+0.099
+0.110
+0.110
+0.110
+0.110
+0.110
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
91
100
110
120
130
140
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B
150
160
170
180
190
200
0.85
0.80
0.74
0.68
0.66
0.65
150
170
190
2200
2400
2500
5000
5500
5500
6000
6500
7000
0.1
0.1
0.1
0.1
0.1
0.1
108
116
123
130
137
144
114
122
129
137
144
152
10
10
10
10
10
10
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” minimum lead length from the case.
NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current
(IZT or I ZK) is superimposed on IZT or I ZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units.
NOTE 3: Temperature coefficient (αVZ). Test conditions for temperature coefficient are a follows:
a.
IZT = 7.5 mA, T1 = 25°C,
T2 = 125°C (1N5221A, thru 1N5242A, B.)
b.
IZT = Rated IZT, T1 = 25°C,
T2 = 125°C (1N5243A, B thru 1N5281A, B.)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
Rev. 20190114
1N5221B(UR)-1N5281B(UR)
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
DO-35
Marking:
Polarity:
Body painted, alpha-numeric
Cathode band
MECHANICAL CHARACTERISTICS
Case:
SOD-80
Marking:
Polarity:
Alpha-numeric
Cathode band
Rev. 20190114
1N5221B(UR)-1N5281B(UR)
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Rev. 20190114
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