1N5805HR [DIGITRON]

Rectifier Diode;
1N5805HR
型号: 1N5805HR
厂家: Digitron Semiconductors    Digitron Semiconductors
描述:

Rectifier Diode

文件: 总4页 (文件大小:586K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5802-1N5806  
HIGH EFFICIENCY RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Working peak reverse voltage  
1N5802  
1N5803  
1N5804  
1N5805  
1N5806  
50  
75  
VRWM  
V
100  
125  
150  
Forward surge current (1)  
IFSM  
IO1  
35  
A
A
Average rectified output current @ TL = 75°C at 3/8” lead length (2)  
Average rectified output current @ TA = 55°C at 3/8” lead length (3)  
Capacitance @ VR = 10V, f = 1MHz, Vsig = 50mV(p-p)  
Reverse recovery time (4)  
2.5  
IO2  
1.0  
A
C
25  
25  
pF  
ns  
trr  
Solder temperature @ 10 s  
TSP  
260  
°C  
Junction and storage temperature range  
Thermal resistance junction to lead (L = 0.375”)  
TJ, Tstg  
RѲJL  
-65 to +175  
36  
°C  
°C/W  
Note 1: TA = 25°C @ IO = 1.0A and VRWM for 10 8.3ms surges at 1 minute intervals.  
Note 2: IO1 is rated at 2.5A @ TL = 75°C at 3/8” lead length. Derate at 25mA/°C for TL above 75°C.  
Note 3: IO2 is rated at 1.0A @ TA = 55°C for PC boards where thermal resistance from mounting point t ambient is sufficiently controlled (RѲJX < 154°C/W) where TJ(max) 175°C is not exceeded.  
Derate at 8.33mA/°C for TA above 55°C.  
Note 4: IF = 0.5A, IRM = 0.5A, IR(REC) = 0.05A.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Minimum  
Thermal  
impedance @  
breakdown  
voltage @  
100µA  
Maximum reverse  
current @ VRWM  
Maximum surge  
current (5)  
Maximum reverse  
recovery time (6)  
Maximum forward voltage  
(7)  
tH = 10ms  
Part  
number  
V(BR)  
VFM  
IR  
IFSM  
trr  
ZѲJX  
Volts  
µA  
Volts  
Amps  
ns  
°C/W  
IF = 1.0A  
0.875  
0.875  
0.875  
0.875  
0.875  
IF = 2.5A  
0.975  
0.975  
0.975  
0.975  
0.975  
25°C  
125°C  
175  
175  
175  
175  
175  
1N5802  
1N5803  
1N5804  
1N5805  
1N5806  
60  
85  
1
1
1
1
1
35  
35  
35  
35  
35  
25  
25  
25  
25  
25  
4.0  
4.0  
4.0  
4.0  
4.0  
110  
135  
160  
Note 5: TA = 2.5°C @ IO = 1.0A and VRWM for ten 8.3ms surges at 1 minute intervals.  
Note 6: IF = 0.5A, IRM = 0.5A, IR(REC) = 0.05A.  
Note 7: See figure 1 for thermal impedance curve.  
Rev. 20150709  
1N5802-1N5806  
HIGH EFFICIENCY RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
MECHANICAL CHARACTERISTICS  
Case  
Digi A  
Marking  
Polarity  
Alpha Numeric  
Cathode Band  
Rev. 20150709  
1N5802-1N5806  
HIGH EFFICIENCY RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20150709  
1N5802-1N5806  
HIGH EFFICIENCY RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20150709  

相关型号:

1N5805HR-PBF

Rectifier Diode
DIGITRON

1N5805R

Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,
MICROSEMI

1N5805US

RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP
MICROSEMI

1N5805X

Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,
MICROSEMI

1N5806

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS
MICROSEMI

1N5806

HERMETIC AXIAL / MELF LEAD RECTIFIER
SENSITRON

1N5806

RECTIFIER, up to 150V, 2.5A, 25ns
SEMTECH

1N5806

HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP
NJSEMI

1N5806CSM4

HIGH EFFICIENCY POWER RECTIFIER IN A CERAMIC SURFACE MOUNT PACKAGE
SEME-LAB

1N5806D2A

ULTRAFAST RECOVERY RECTIFIER DIODE
SEME-LAB

1N5806D2B

ULTRAFAST RECOVERY RECTIFIER DIODE
SEME-LAB

1N5806R

Rectifier Diode, 1 Element, Silicon,
MICROSEMI