1N758A-PBF [DIGITRON]
Zener Diode;
| 型号： | 1N758A-PBF |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Zener Diode |
| 文件： | 总3页 (文件大小：485K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N746-1N759
SILICON PLANAR ZENER DIODES
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Operating and Storage Temperature
-65 to +175°C
Thermal Resistance
250°C/W junction to lead at 3/8” lead length from body
≤ 50°C
Steady State Power
0.5 Watts at TL
1.1 Volts
Forward Voltage @ 200mA
Solder Temperatures:
260°C for 10 s (max)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Normal Zener
Voltage
Zener
Maximum Zener
Impedance
Maximum Reverse
Leakage Current
VR = 1 Volt
Maximum
Zener Current
Typical
Temperature
Coefficient
Test
Current
Part
Number
VZ @ lZT
ZZT @ lZT
lZM
Of Zener
Voltage
(Note 2)
lZT
(Note 3)
(Note 4)
(Note 1)
VOLTS
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
OHMS
30
30
29
28
24
23
22
19
17
11
7
μA @ 25°C
100
μA @ 125°C
200
mA
150
135
120
110
100
95
%/°C
-.085
-.080
-.075
-.066
-.058
-.046
-.033
-.015
±.010
+.030
+.049
+.053
+.057
+.060
+.061
+.062
+.062
1N4370
1N4371
1N4372
1N746
1N747
1N748
1N749
1N750
1N751
1N752
1N753
1N754
1N755
1N756
1N757
1N758
1N759
75
50
10
10
10
2
150
100
30
30
30
30
30
20
20
20
20
20
20
20
20
20
85
2
75
1
70
1
65
0.1
0.1
0.1
0.1
0.1
0.1
0.1
60
5
55
6
50
8
45
10
17
30
40
35
12
30
Notes:
1. Suffix letter A denotes ±5% tolerance, suffix C denotes ±2% tolerance, & suffix D denotes ±1% tolerance.
2. Voltage measurements to be performed 20 seconds after application of dc current.
3. Zener impedance derived by superimposing on lZT, a 60cps, rms ac current equal to 10% lZT (2mA ac)
4. Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal
equilibrium at the power dissipation of 400mW.
Rev. 20120328
1N746-1N759
SILICON PLANAR ZENER DIODES
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
DO-35 Glass
Marking:
Polarity:
Alpha Numeric
Cathode Band
Rev. 20120328
1N746-1N759
SILICON PLANAR ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Rev. 20120328
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