2N1849A [DIGITRON]

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 6; Capacitance: 7; Package: TO-48;


型号：	2N1849A
厂家：	Digitron Semiconductors
描述：	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 6; Capacitance: 7; Package: TO-48
文件：	总5页 (文件大小：1288K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

I_T(RMS)

I_T(AV)

Value

Unit

RMS on-state current @ T_C= 80°C

Mean on-state current @ T_C= 80°C

Non-repetitive surge peak on-state current @ T_J≤ 125°C

t = 8.3ms

t = 10ms

I_TSM

157

150

I2t for fusing @ T_J≤ 125°C, t = 10ms

I²t

112.5

100

A²s

Critical rate of rise of on-state current

di/dt

A/µs

Operating junction temperature range; non-“A”

Operating junction temperature range; “A”

-40 to +100

-65 to +125

T_J

°C

Storage temperature range; non-“A”

Storage temperature range; “A”

-40 to +125

-65 to +125

T_stg

VOLTAGE RATINGS

T_J= 125°C

2N1842(A) 2N1843(A) 2N1844(A) 2N1845(A) 2N1846(A) 2N1847(A) 2N1848(A) 2N1849(A) 2N1850(A)

V_DRM= V_RRM

100

150

200

250

300

400

500

VOLTAGE RATINGS

T_J= 125°C

V_DRM= V_RRM

TR6010

600

TR7010

700

TR8010

800

TR9010

900

TR1010

1000

TR1110

1100

TR1210

1200

THERMAL RESISTANCE

Thermal resistance

Symbol

R_th(j-c)

Value

Unit

Junction to case for DC

Case to heatsink

°C/W

R_th(c-h)

0.4

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Value

Unit

Characteristic

Symbol

Test conditions

Min

Typ

Max

Gate trigger current

I_GT

V_GT

V_GD

T_J= 25°C

T_J= 125°C

V_D= 12V

V_D= V_DRM

R_L= 33Ω

R_L= 3.3Ω

t_p≥ 20µs

Gate trigger voltage

Peak gate voltage

0.25

Gate

open

Holding current

I_H

T_J= 25°C

I_T= 0.5A

Peak on-state voltage

V_TM

I_DRM

I_RRM

2.2

T_J= 25°C

T_J= 125°C

I_TM= 30A

t_p= 10ms

Maximum off-state current

V_DRMspecified

V_RRMspecified

T_J= 25°C

I_G= 200mA

I_T= 30A

di_G/dt = 2A/µs

Turn on time

t_gt

µs

V_D= V_DRM

Rev. 20200923

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Value

Unit

Characteristic

Symbol

Test conditions

Min

Typ

Max

V_D= 0.67

V_DRM

Gate open

T_J= 125°C

di_R/dt = 30A/µs

I_T= 10A

dv/dt = 20V/µs

Turn off time

t_q

100

µs

V_R= 30V

Critical rise of off-state voltage

dv/dt

100

V/µs

T_J= 125°C

Linear slope up to 0.67 V_DRMspecified

MECHANICAL CHARACTERISTICS

Case

TO-48

Marking

Polarity

Alpha-numeric

Cathode

Rev. 20200923

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

Rev. 20200923

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

Rev. 20200923

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

Rev. 20200923

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