MCR72-1 [DIGITRON]

SILICON CONTROLLED RECTIFIERS;


型号：	MCR72-1
厂家：	Digitron Semiconductors
描述：	SILICON CONTROLLED RECTIFIERS
文件：	总3页 (文件大小：223K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

D I G I T R O N S E M I C O N D U C T O R S

MCR72 SERIES

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(T_J= -40 to +110°C, sine wave, 50 to 60Hz, gate open)

MCR72-1

MCR72-2

MCR72-3

MCR72-4

MCR72-5

MCR72-6

MCR72-7

MCR72-8

V_DRM

V_RRM

100

200

300

400

500

600

On-state RMS current (180° conduction angles, T_C= 83°C)

I_T(RMS)

I_TSM

8.0

Peak non-repetitive surge current

(half-cycle, sine wave, 60Hz, T_J= 110°C)

100

Circuit fusing consideration (t = 8.3ms)

Forward peak gate voltage (t ≤ 10µs, T_C= 83°C)

Forward peak gate current (t ≤ 10µs, T_C= 83°C)

Forward peak gate power (pulse width ≤ 10µs, T_C= 83°C)

Average gate power (t = 8.3ms, T_C= 83°C)

Operating junction temperature range

Storage temperature range

I²t

V_GM

I_GM

P_GM

P_G(AV)

T_J

A²s

±5.0

1.0

5.0

0.75

-40 to +110

-40 to +150

8.0

°C

T_stg

°C

Mounting torque

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

R_ӨJC

Maximum

Unit

°C/W

Thermal resistance, junction to case

Thermal resistance, junction to ambient

2.2

R_ӨJA

Lead solder temperature

T_L

°C

(lead length 1/8” from case, 10s max)

260

ELECTRICAL CHARACTERISTICS (T_J= 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak forward or reverse blocking current⁽²⁾

(V_AK= Rated V_DRMor V_RRM, R_GK= 1kΩ)

T_C= 25°C

I_DRM,

I_RRM

µA

T_C= 110°C

500

ON CHARACTERISTICS

Peak forward on-state voltage

V_TM

µA

(I_TM= 16A, pulse width ≤ 1ms, duty cycle ≤ 2%)

1.7

2.0

200

1.5

Gate trigger current (continuous dc)⁽³⁾

(V_D= 12V, R_L= 100Ω)

Gate trigger voltage (continuous dc)⁽³⁾

(V_D= 12V, R_L= 100Ω)

I_GT

V_GT

0.5

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130115

D I G I T R O N S E M I C O N D U C T O R S

MCR72 SERIES

SILICON CONTROLLED RECTIFIERS

Gate non-trigger voltage

V_GD

(V_D= 12V, R_L= 100Ω, T_J= 110°C)

0.1

6.0

Holding current

I_H

µs

(V_D= 12V, gate open, initiating current = 200mA)

Gate controlled turn-on time

t_gt

(V_D= Rated V_DRM, I_TM= 16A, I_G= 2mA)

1.0

DYNAMIC CHARACTERISTICS

Critical rate of rise of off-state voltage

dv/dt

V/µs

(V_D= rated V_DRM, R_GK= 1kΩ, T_J= 110°C, exponential waveform)

Note 2. Ratings apply for negative gate voltage or R_GK= 1kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should

not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.

Note 3: R_GKcurrent not included in measurement.

MECHANICAL CHARACTERISTICS

Case

TO-220AB

Marking

Pin out

Alpha-numeric

See below

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130115

D I G I T R O N S E M I C O N D U C T O R S

MCR72 SERIES

SILICON CONTROLLED RECTIFIERS

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130115

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