T2322A-PBF [DIGITRON]
TRIAC;
| 型号： | T2322A-PBF |
| 厂家： | 
Digitron Semiconductors |
| 描述： | TRIAC 三端双向交流开关 |
| 文件： | 总2页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2322, T2323 SERIES
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Suffix
Symbol
Value
Unit
(Note 1)
Peak Repetitive Off-State Voltage
(TJ = 25 to 100°C, Gate Open)
T2322, T2323
F
A
B
C
D
E
50
100
200
300
400
500
600
VDRM
V
M
RMS On-State Current (TC = 70°C)
(Full Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
2.5
25
A
A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)
ITSM
Circuit Fusing (t ≤ 8.3ms)
I2t
2.6
10
A2s
W
Peak-Gate Power (1µs)
PGM
Average Gate Power
(TC = 60°C)
PG(AV)
0.15
W
Peak Gate Current (1µs)
IGM
TJ
0.5
A
°C
Operating Junction Temperature Range
Storage Temperature Range
-40 to +110
-40 to +150
8.0
Tstg
-
°C
(Note 2)
Mounting Torque (6-32 Screw)
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
RθJC
Max
3.5
60
Unit
°C/W
°C/W
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJA
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = 100°C
-
-
-
10
0.75
µA
mA
IDRM
0.2
(Note 3)
Peak On-State Voltage
(ITM = 10A)
T2323 Series
T2322 Series
-
-
1.7
1.7
2.6
2.2
VTM
V
Gate Trigger Current (Continuous dc)
(VD = 12V, RL = 30Ω)
T2322 Series
-
-
10
All Modes
IGT
mA
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G (+)
T2323 Series
T2323 Series
-
-
-
-
25
40
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30Ω, TC = 25°C)
(VD = VDRM, RL = 125Ω, TC = 100°C)
VGT
-
1
-
2.2
-
V
0.15
Rev. 20160606
T2322, T2323 SERIES
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
Holding Current
(VD = 12V, ITM = 150mA, Gate Open)
IH
-
-
15
30
mA
µs
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10A pk, IG = 60mA)
tgt
1.8
2.5
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100°C)
dv/dt
10
100
4.0
-
-
V/µs
V/µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C
dv/dt(c)
1.0
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of torque washer. Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink
contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Note 3: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case
TO-126
Marking
Pin out
Alpha-numeric
See below
Rev. 20160606
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