T2322B [DIGITRON]
SILICON BIDIRECTIONAL THYRISTORS;
| 型号： | T2322B |
| 厂家： | 
Digitron Semiconductors |
| 描述： | SILICON BIDIRECTIONAL THYRISTORS 三端双向交流开关 |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D I G I T R O N S E M I C O N D U C T O R S
T2322, T2323 SERIES
SENSITIVE GATE TRIACS
SILICON BIDIRECTIONAL THYRISTORS
2.5 AMPERES RMS; 50 THROUGH 600 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Suffix
Symbol
Value
Unit
(Note 1)
Peak Repetitive Off-State Voltage
(TJ = 25 to 100°C, Gate Open)
T2322, T2323
F
A
B
C
D
E
50
100
200
300
400
500
600
VDRM
V
M
RMS On-State Current (TC = 70°C)
IT(RMS)
2.5
25
A
A
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-Repetitive Surge Current
ITSM
(One Full Cycle, 60 Hz)
Circuit Fusing (t ≤ 8.3ms)
I2t
2.6
10
A2s
W
Peak-Gate Power (1µs)
PGM
Average Gate Power
PG(AV)
0.15
W
(TC = 60°C)
Peak Gate Current (1µs)
IGM
TJ
0.5
A
°C
Operating Junction Temperature Range
Storage Temperature Range
-40 to +110
-40 to +150
8.0
Tstg
-
°C
(Note 2)
Mounting Torque (6-32 Screw)
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
RθJC
Max
3.5
60
Unit
°C/W
°C/W
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electrical characteristics apply in both directions)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
TJ = 25°C
-
-
-
10
µA
IDRM
(VD = Rated VDRM, Gate Open)
TJ = 100°C
0.2
0.75
mA
(Note 3)
Peak On-State Voltage
T2323 Series
T2322 Series
-
-
1.7
1.7
2.6
2.2
VTM
V
(ITM = 10A)
Gate Trigger Current (Continuous dc)
(VD = 12V, RL = 30Ω)
T2322 Series
-
-
10
All Modes
IGT
mA
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G (+)
T2323 Series
T2323 Series
-
-
-
-
25
40
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30Ω, TC = 25°C)
(VD = VDRM, RL = 125Ω, TC = 100°C)
VGT
-
1
-
2.2
-
V
0.15
Holding Current
IH
tgt
-
-
15
1.8
100
30
2.5
-
mA
µs
(VD = 12V, ITM = 150mA, Gate Open)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10A pk, IG = 60mA)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100°C)
dv/dt
10
V/µs
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Revised: 20130201
D I G I T R O N S E M I C O N D U C T O R S
T2322, T2323 SERIES
SENSITIVE GATE TRIACS
SILICON BIDIRECTIONAL THYRISTORS
2.5 AMPERES RMS; 50 THROUGH 600 VOLTS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C
dv/dt(c)
1.0
4.0
-
V/µs
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Note 2: Torque rating applies with use of torque washer. Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and
heat-sink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Note 3: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case
TO-126
Marking
Pin out
Alpha-numeric
See below
TO-126
Inches
Max
Millimeters
Min
Min
Max
11.050
7.750
2.670
0.660
3.180
2.460
2.410
0.640
16.640
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.091
0.050
0.015
0.595
0.435
0.305
0.105
0.026
0.125
0.097
0.095
0.025
0.655
10.80
7.490
2.410
0.510
2.920
2.310
1.270
0.380
15.110
G
H
J
K
M
Q
R
S
U
V
3° TYP
3° TYP
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
-
3.760
1.140
0.640
3.680
1.020
4.010
1.400
0.890
3.940
-
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Revised: 20130201
相关型号：
©2020 ICPDF网 联系我们和版权申明