1N5822-B [DIODES]

3.0A SCHOTTKY BARRIER RECTIFIERS; 3.0A肖特基二极管


型号：	1N5822-B
厂家：	DIODES INCORPORATED
描述：	3.0A SCHOTTKY BARRIER RECTIFIERS 3.0A肖特基二极管整流二极管肖特基二极管瞄准线功效
文件：	总2页 (文件大小：57K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5820 - 1N5822

3.0A SCHOTTKY BARRIER RECTIFIERS

Features

Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Application

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

Case: DO-201AD

DO-201AD

Min

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Dim

Max

25.40

7.20

Moisture Sensitivity: Level 1 per J-STD-020C

9.50

1.30

5.30

Terminals: Finish - Bright Tin. Plated Leads Solderable per

MIL-STD-202, Method 208

1.20

Polarity: Cathode Band

4.80

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

Ordering Information: See Last Page

Weight: 1.1 grams (approximate)

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N5820

1N5821

1N5822

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

3.0

@ T_L= 95°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

I_FSM

(JEDEC Method)

@ T_L= 75°C

Forward Voltage (Note 2)

@ I_F= 3.0A

@ I_F= 9.4A

0.475

0.850

0.500

0.900

0.525

0.950

V_FM

I_RM

Peak Reverse Current

at Rated DC Blocking Voltage (Note 2)

@ T_A

= 25°C

2.0

@ T_A= 100°C

R_qJA

R_qJL

°C/W

°C

Typical Thermal Resistance (Note 3)

T_j,T_STG

Operating and Storage Temperature Range

-65 to +125

Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.

2. Short duration pulse test used to minimize self-heating effect.

3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)

copper pad.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

DS23003 Rev. 8 - 2

1 of 2

1N5820-1N5822

www.diodes.com

ã Diodes Incorporated

Single Phase Half-Wave

60 Hz Resistive or Inductive

Load 9.5mm Lead Length

1.0

0.1

100

150

0.1

0.3

0.5

0.7

0.9

1.1

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Voltage Characteristics

T_L, LEAD TEMPERATURE (ºC)

Fig. 1 Forward Current Derating Curve

100

1000

T_j= 25ºC

f = 1MHz

V_sig= 50m Vp-p

100

8.3ms Single Half Sine-Wave

JEDEC Method

T_J= T_J(max)

0.1

1.0

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Peak Forward Surge Current

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Total Capacitance

(Note 5)

Ordering Information

Device

Packaging

DO-201AD

Shipping

500 Bulk

1N5820-B

1N5820-T

1N5821-B

1N5821-T

1N5822-B

1N5822-T

1.2K/Tape & Reel, 13-inch

500 Bulk

1.2K/Tape & Reel, 13-inch

500 Bulk

1.2K/Tape & Reel, 13-inch

Notes: 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf

DS23003 Rev. 8 - 2

2 of 2

1N5820-1N5822

www.diodes.com

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