1N5822-E3/51 [VISHAY]

DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode;


型号：	1N5822-E3/51
厂家：	VISHAY
描述：	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode 功效二极管
文件：	总4页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5820 thru 1N5822

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

• Guardring for overvoltage protection

• Very small conduction losses

• Extremely fast switching

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-201AD

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, dc-to-dc converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

3.0 A

V_RRM

I_FSM

20 V, 30 V, 40 V

80 A

MECHANICAL DATA

Case: DO-201AD

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

V_F

0.475 V, 0.500 V, 0.525 V

125 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

1N5820

1N5821

1N5822

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Non-repetitive peak reverse voltage

V_RSM

Maximum average forward rectified current

at 0.375" (9.5 mm) lead length at T_L= 95 °C

I_F(AV)

3.0

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 125

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

1N5820

1N5821

0.500

0.900

2.0

1N5822

0.525

UNIT

(1)

Maximum instantaneous forward voltage

3.0

V_F

0.475

(1)

9.4

0.850

0.950

T_A= 25 °C

T_A= 100 °C

Maximum average reverse current

at rated DC blocking voltage

I_R

Note

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Document Number: 88526

Revision: 20-Oct-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

1N5820 thru 1N5822

Vishay General Semiconductor

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

1N5820

1N5821

1N5822

UNIT

(1)

R_θJA

Typical thermal resistance

°C/W

(1)

R_θJL

Note

(1)

Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with 2.5" x 2.5" (63.5 mm x 63.5 mm) copper

pad

ORDERING INFORMATION (Example)

PREFERRED P/N

1N5820-E3/54

1N5820-E3/73

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

13" diameter paper tape and reel

Ammo pack packaging

1.08

1400

1000

RATINGS AND CHARACTERISTICS CURVES

(T_A= 25 °C unless otherwise noted)

4.0

100

T_J= 125 °C

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

3.0

2.0

1.0

Pulse Width = 300 μs

1 % Duty Cycle

T_J= 25 °C

0.1

0.01

100

120

140

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Lead Temperature (°C)

Instantaneous Forward Voltage (V)

Fig. 1 - Forward Current Derating Curve

Fig. 3 - Typical Instantaneous Forward Characteristics

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

T_J= 125 °C

T_J= 75 °C

0.1

T_J= 25 °C

0.01

0.001

100

Number of Cycles at 60 Hz

Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 4 - Typical Reverse Characteristics

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 88526

Revision: 20-Oct-09

1N5820 thru 1N5822

Vishay General Semiconductor

1000

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

0.1

100

0.1

100

Reverse Voltage (V)

t - Pulse Duration (s)

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-201AD

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.052 (1.32)

0.048 (1.22)

DIA.

Document Number: 88526

Revision: 20-Oct-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000

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