1N5822 [DIODES]

3.0A SCHOTTKY BARRIER RECTIFIERS; 3.0A肖特基二极管
1N5822
型号: 1N5822
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

3.0A SCHOTTKY BARRIER RECTIFIERS
3.0A肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5820 - 1N5822  
3.0A SCHOTTKY BARRIER RECTIFIERS  
Features  
·
Schottky Barrier Chip  
·
Guard Ring Die Construction for  
Transient Protection  
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Application  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
D
DO-201AD  
Min  
Dim  
A
Max  
Mechanical Data  
25.40  
7.20  
¾
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.1 grams (approx)  
Mounting Position: Any  
Marking: Type Number  
B
9.50  
1.30  
5.30  
·
C
1.20  
D
4.80  
·
·
·
·
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
1N5820  
20  
1N5821  
1N5822  
40  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
14  
21  
28  
V
A
Average Rectified Output Current  
(Note 1)  
3.0  
@ TL = 95°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
IFSM  
80  
A
(JEDEC Method)  
@ TL = 75°C  
Forward Voltage (Note 2)  
@ IF = 3.0A  
@ IF = 9.4A  
0.475  
0.850  
0.500  
0.900  
0.525  
0.950  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage (Note 2)  
@ TA = 25°C  
@ TA = 100°C  
2.0  
20  
mA  
RqJA  
RqJL  
40  
10  
°C/W  
°C  
Typical Thermal Resistance (Note 3)  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +125  
Notes:  
1. Measured at ambient temperature at a distance of 9.5mm from the case.  
2. Short duration pulse test used to minimize self-heating effect.  
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)  
copper pad.  
DS23003 Rev. 7 - 2  
1 of 2  
1N5820-1N5822  
www.diodes.com  
4
3
30  
10  
Single Phase Half-Wave  
60 Hz Resistive or Inductive  
Load 9.5mm Lead Length  
2
1
0
1.0  
0.1  
0.1  
10  
50  
100  
150  
0.3  
0.5  
0.7  
0.9  
1.1  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Voltage Characteristics  
TL, LEAD TEMPERATURE (ºC)  
Fig. 1 Forward Current Derating Curve  
100  
80  
1000  
Tj = 25ºC  
f = 1MHz  
Vsig = 50m Vp-p  
60  
40  
20  
0
100  
8.3ms Single Half Sine-Wave  
JEDEC Method  
TJ = TJ(max)  
10  
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Peak Forward Surge Current  
Fig. 4 Typical Total Capacitance  
DS23003 Rev. 7 - 2  
2 of 2  
www.diodes.com  
1N5820-1N5822  

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