2DA1797 [DIODES]
PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
| 型号： | 2DA1797 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DA1797
PNP SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
•
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DC4672)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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•
•
•
•
TOR
LLEC
CO
2,4
3 E
2 C
1 B
C 4
T
1
ASE
B
3
EMITTER
VIEW
OP
Top View
Device Schematic
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Value
-50
-50
-6
Unit
V
V
V
A
Peak Pulse Current
-6
Continuous Collector Current
-3
A
IC
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Symbol
PD
Value
0.9
Unit
W
139
°C/W
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Rθ
JA
2
PD
62.5
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-50
-50
-6
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -50μA, IE = 0
C = -1mA, IB = 0
E = -50μA, IC = 0
V
-0.1
⎯
⎯
μA
μA
VCB = -50V, IE = 0
VEB = -5V, IC = 0
Emitter Cut-Off Current
-0.1
IEBO
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
-100
-350
270
mV
VCE(SAT)
hFE
⎯
82
IC = -1A, IB = -50mA
⎯
⎯
VCE = -2V, IC = -500mA
SMALL SIGNAL CHARACTERISTICS
V
CB = -10V, IE = 0,
f = 1MHz
CE = -2V, IC = -100mA,
f = 100MHz
Output Capacitance
27
pF
Cobo
fT
⎯
⎯
⎯
⎯
V
Current Gain-Bandwidth Product
160
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
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www.diodes.com
December 2008
© Diodes Incorporated
2DA1797
Document number: DS31619 Rev. 2 - 2
2DA1797
2.0
1.6
1.2
0.8
10
1
Pw = 10ms
Pw = 100ms
DC
0.1
0.01
0.4
0
0.001
0
25
50
150
0.1
1
10
100
100
125
75
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
Fig. 1 Power Dissipation vs.
Ambient Temperature
1,000
1.0
0.8
0.6
T
= 150°C
= 85°C
A
I
I
= -5mA
B
T
A
T
= 25°C
A
= -4mA
= -3mA
B
100
T
= -55°C
A
I
B
0.4
I
= -2mA
B
B
0.2
0
V
= -4V
CE
I
= -1mA
10
0
4
8
12
16
20
1
10
100
1,000
10,000
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
vs. Collector-Emitter Voltage
10
1.2
1.0
I
/I = 10
B
V
= -4V
C
CE
1
0.1
0.8
0.6
0.4
T
= 150°C
A
T
T
= -55°C
A
T
= 85°C
A
T
= 25°C
= 25°C
= 85°C
A
A
T
A
T
= -55°C
A
0.01
0.001
T
= 150°C
A
0.2
0
1
10
100
1,000
10,000
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DA1797
Document number: DS31619 Rev. 2 - 2
2DA1797
1,000
100
10
1.2
1.0
I
/I = 10
B
C
f = 1MHz
0.8
0.6
T
T
= -55°C
A
C
ibo
= 25°C
= 85°C
A
T
A
0.4
T
= 150°C
A
0.2
0
C
obo
1
10
100
1,000
10,000
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Capacitance Characteristics
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
10
1
V
= -2V
CE
f = 100MHz
0
10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.9
R
(t) = r(t) * R
θJA
θ
JA
R
= 126°C/W
θ
JA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DA1797
Document number: DS31619 Rev. 2 - 2
2DA1797
Ordering Information (Note 6)
Part Number
2DA1797-13
Case
SOT89-3L
Packaging
2500/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1797 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
YWW
1797
Package Outline Dimensions
D1
SOT89-3L
C
Dim Min Max Typ
A
B
B1
C
D
D1
E
1.40 1.60 1.50
0.45 0.55 0.50
0.37 0.47 0.42
0.35 0.43 0.38
4.40 4.60 4.50
1.50 1.70 1.60
2.40 2.60 2.50
E
H
L
B
e
B1
e
—
—
1.50
H
L
3.95 4.25 4.10
0.90 1.20 1.05
A
All Dimensions in mm
D
Suggested Pad Layout
X1
Dimensions Value (in mm)
X1
X2
X3
Y1
Y2
Y3
C
1.7
0.9
0.4
2.7
1.3
1.9
3.0
Y1
X3
X2
Y2
Y3
C
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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www.diodes.com
December 2008
© Diodes Incorporated
2DA1797
Document number: DS31619 Rev. 2 - 2
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