2DA1971-13 [DIODES]

Small Signal Bipolar Transistor, 0.5A I(C), PNP;


型号：	2DA1971-13
厂家：	DIODES INCORPORATED
描述：	Small Signal Bipolar Transistor, 0.5A I(C), PNP 开关晶体管
文件：	总7页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2DA1971

400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89

Features

Mechanical Data

•

Case: SOT89

•

BV_CEO> -400V

Max Continuous Current I_C= -0.5A

High Gain Holds up h_FE≥ 140 @ I_C= -100mA

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Case material: molded plastic. “Green” molding compound.

UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

•

Weight: 0.05 grams (Approximate)

Applications

•

High Voltage Switching

SOT89

Top View

Pin Out

Device symbol

Ordering Information (Note 4)

Product

2DA1971-7

2DA1971-13

Marking

1S2

Reel size (inches)

Tape width (mm)

Quantity per reel

1,000

2,500

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

1S2 = Product Type Marking Code

YWW = Date Code Marking

Y = Last digit of year (ex: 1 = 2011)

WW = Week code (01 – 53)

YWW

1S2

Top View

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2DA1971

Document number: DS35669 Rev: 2 – 2

2DA1971

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-400

-7

Unit

Continuous Collector Current

Peak Pulse Current

-0.5

-1

I_CM

Base Current

-250

I_B

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

1.5

Unit

Power Dissipation (Note 5)

P_D

R_θJA

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Leads (Note 6)

Operating and Storage Temperature Range

°C/W

°C

10.4

R_θJL

-55 to +150

T_J,T_STG

ESD Ratings (Note 7)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

≥ 8,000

≥ 400

Unit

JEDEC Class

Notes:

5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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2DA1971

Document number: DS35669 Rev: 2 – 2

2DA1971

Thermal Characteristics and Derating information

V_CE(sat)

1.5

1.0

0.5

0.0

Limit

25mmX25mm FR4

1oz Cu

100m

10m

100ms

10ms

Single Pulse. T_amb=25°C

1ms

25mmX25mm FR4

1oz Cu

100µs

100m

100

20 40 60 80 100 120 140 160

-V_CECollector-Emitter Voltage (V)

Temperature (°C)

Safe Operating Area

Derating Curve

Single Pulse. T_amb=25°C

25mmX25mm FR4

1oz Cu

25mmX25mm FR4

1oz Cu

100

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

100µ 1m 10m 100m

100

100µ 1m 10m 100m

100

Pulse Width (s)

Transient Thermal Impedance

Pulse Power Dissipation

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2DA1971

Document number: DS35669 Rev: 2 – 2

2DA1971

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 8)

Emitter-Base Breakdown Voltage

Collector-Emitter Cut-off Current

Collector Cut-off Current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CES

Min

-400

Typ

Max

Unit

Test Condition

I_C= -100µA

-400

I_C= -1mA

-7

I_E= -100µA

V_CE= -320V

V_CB= -320V

V_EB= -6V

-100

I_CBO

Emitter Cut-off Current

I_EBO

_C= -20mA, V_CE= -5V

140

450

400

Static Forward Current Transfer Ratio (Note 8)

Collector-Emitter saturation Voltage (Note 8)

h_FE

_C= -100mA, V_CE= -5V

_C= -100mA, I_B= -10mA

_C= -200mA, I_B= -40mA

-250

-400

-0.9

-0.8

V_CE(sat)

Base-Emitter saturation Voltage (Note 8)

Base-Emitter Turn-On Current (Note 8)

-0.75

V_BE(sat)

V_BE(on)

I_C= -100mA, I_B= -10mA

I_C= -200mA, V_CE= -10V

_C= -50mA, V_CE= -5V,

Transition frequency

MHz

f_T

f = 50MHz

Collector Output Capacitance

Delay Time

C_obo

t_(d)

t_(r)

V_CB= -10V, I_E= 0, f = 1MHz

Rise Time

111

2165

185

V_CC= -200V, I_C= -100mA,

I_B1= -10mA, I_B2= 20mA

Storage Time

Fall Time

t_(s)

t_(f)

Notes:

8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

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2DA1971

Document number: DS35669 Rev: 2 – 2

2DA1971

Typical Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

100m

10m

0.5

0.4

0.3

0.2

0.1

0.0

Tamb=25°C

I_C/I_B=20

I_C/I_B=10

I_C/I_B=50

I_C/I_B=10

150°C

100°C

I_C/I_B=5

25°C

-55°C

10m

100m

10m

100m

- I_CCollector Current (A)

V_CE(SAT)v I_C

1.0

0.8

0.6

0.4

0.2

V_CE=-5V

150°C

100°C

250

200

150

100

-55°C

25°C

100°C

-55°C

I_C/I_B=10

100m

150°C

10m

100m

10m

- I_CCollector Current (A)

h_FEv I_C

V_BE(SAT)v I_C

1.0

0.8

0.6

0.4

0.2

-55°C

25°C

100°C

V_CE=-5V

150°C

10m

100m

- I_CCollector Current (A)

V_BE(ON)v I_C

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Document number: DS35669 Rev: 2 – 2

2DA1971

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT89

Min

Dim

Max

1.60

0.62

0.54

0.44

4.60

1.83

2.60

H¹

1.40

0.44

0.35

4.40

1.62

2.29

1.50 Typ

8° (4X)

3.94

2.63

0.89

4.25

2.93

1.20

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

0.900

1.733

0.416

1.300

4.600

1.475

0.950

1.125

1.500

X2 (2x)

X (3x)

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Document number: DS35669 Rev: 2 – 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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Document number: DS35669 Rev: 2 – 2

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