2DA2018 [DIODES]
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR; 12V的低VCE （ sat）的PNP表面贴装晶体管
| 型号： | 2DA2018 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总5页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DA2018
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
•
•
•
•
•
Low Collector-Emitter Saturation Voltage, VCE(sat)
Ultra-Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
•
•
•
•
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Applications
•
•
•
DC-DC converter
Portable equipments
Power management units
C
SOT-523
C
B
E
B
E
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information (Note 3)
Product
2DA2018-7
Marking
KTF
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8mm
3,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
KTF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
KTF
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
2015
Code
W
X
Y
Z
A
B
C
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
2DA2018
Document number: DS31823 Rev. 3 - 2
2DA2018
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-15
-12
-6
Unit
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Collector Current - Continuous
Peak Pulse Collector Current
-500
-1
mA
A
ICM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
Value
150
Unit
mW
°C/W
°C
833
Rθ
JA
-55 to +150
TJ, TSTG
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
160
100
80
140
120
100
Single Pulse
(t) = r(t) * R
θJA
R
θJA
R
= 470°C/W
θJA
T
- T = P * R (t)
A θJA
J
60
Duty Cycle, D = t /t
1
2
80
60
40
20
0
40
R
= 833°C/W
JA
θ
20
0
0.0001 0.001 0.01 0.1
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
1
10
100 1,000
0
20
40
60
80 100 120 140 160
C)
TA, AMBIENT TEMPERATURE (
°
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 470°C/W
θ
JA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
2DA2018
Document number: DS31823 Rev. 3 - 2
2DA2018
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min
-15
-12
-6
Typ
⎯
⎯
Max
⎯
⎯
⎯
-100
-50
Unit
V
V
Test Condition
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -15V, IE = 0
VCB = -15V, IE = 0, TA = 150°C
VEB = -6V, IC = 0
VCE = -2V, IC = -10mA
V
⎯
nA
μA
nA
Collector Cutoff Current
ICBO
⎯
⎯
Emitter Cutoff Current
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
-100
680
-250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IEBO
hFE
VCE(sat)
Cobo
fT
ton
td
tr
toff
⎯
270
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7.4
260
40
18
22
106
87
19
⎯
mV
pF
MHz
ns
ns
ns
ns
ns
ns
IC = -200mA, IB = -10mA
VCB = -10V, f = 1.0MHz
VCE = -2V, IC = -10mA, f = 100MHz
VCC = -6V
IC = -200mA, IB1 = IB2 = -10mA
ts
tf
Fall Time
⎯
Notes:
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
800
1.2
1.0
I
= 5mA
= 4mA
700
600
500
400
B
I
B
B
T
= 125°C
= 85°C
A
0.8
0.6
0.4
I
I
= 3mA
= 2mA
T
A
B
T
= 25°C
A
300
200
I
= 1mA
B
T
= -55°C
A
0.2
0
100
0
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
100
1,000
0
2
4
6
8
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0.1
1.0
0.8
V
= 2V
CE
I
/I = 10
B
C
T
= -55°C
A
A
0.6
0.4
T
= 150°C
A
T = 85°C
A
0.01
T
= 125°C
T
= 25°C
A
T
= 25°C
A
T
= -55°C
A
T
= 85°C
A
T
= 125°C
A
0.2
0
T
= 150°C
A
0.001
0.01
0.1
1
10
100
1,000
0.01
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
3 of 5
www.diodes.com
October 2010
© Diodes Incorporated
2DA2018
Document number: DS31823 Rev. 3 - 2
2DA2018
1.0
0.8
1.2
1.0
0.8
V
= 5V
CE
I
/I = 20
B
C
T
= -55°C
A
0.6
0.4
T
= -55°C
= 25°C
A
0.6
T
= 25°C
A
T
A
T
= 85°C
0.4
0.2
0
A
T
= 85°C
A
T
= 125°C
A
T
= 125°C
A
0.2
0
T
= 150°C
A
T
= 150°C
A
0.01
0.1
1
10
100
1,000
0.01
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
100
10
1
1.2
1.0
0.8
f = 1MHz
I
/I = 10
B
C
C
ibo
C
obo
T
= -55°C
= 25°C
A
0.6
0.4
T
A
T
= 85°C
A
T
= 125°C
A
T
A
= 150°C
0.2
0
0.01
0.1
1
10
100
1,000
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Fig. 10 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 11 Typical Capacitance Characteristics
Package Outline Dimensions
A
SOT-523
Dim
Min
0.15
0.75
1.45
⎯
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
Max
0.30
0.85
1.75
⎯
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
⎯
A
B
C
D
G
H
J
K
L
M
N
α
C
B
G
H
K
M
N
J
L
D
All Dimensions in mm
4 of 5
www.diodes.com
October 2010
© Diodes Incorporated
2DA2018
Document number: DS31823 Rev. 3 - 2
2DA2018
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
1.8
0.4
0.51
1.3
Z
C
0.7
X
E
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
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October 2010
© Diodes Incorporated
2DA2018
Document number: DS31823 Rev. 3 - 2
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