2DB1182Q [DIODES]
32V PNP SURFACE MOUNT TRANSISTOR IN TO252; 32V PNP表面贴装晶体管TO252
| 型号： | 2DB1182Q |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DB1182Q
32V PNP SURFACE MOUNT TRANSISTOR IN TO252
Features
Mechanical Data
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
•
•
Case: TO252
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin, Solderable per MIL-STD-202,
Method 208
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
Weight: 0.34 grams (approximate)
TO252
C
E
B
Top View
Device Schematic
Pin Out Configuration
Top view
Ordering Information (Note 3)
Product
2DB1182Q-13
Marking
2DB1182Q
Reel size (inches)
13
Tape width (mm)
Quantity per reel
16
2,500
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2DB1182Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code (01 - 53)
YYWW
2DB1182Q
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www.diodes.com
November 2011
© Diodes Incorporated
2DB1182Q
Document number: DS35651 Rev. 1 - 2
2DB1182Q
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
-32
-5
Unit
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Continuous Collector Current
Peak Pulse Collector Current
-2
A
-3
A
ICM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Operating and Storage Temperature Range
Symbol
Value
10
Unit
W
PD
-55 to +150
°C
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
IC = -50μA, IE = 0
-40
-32
-5
V
V
BVCBO
BVCEO
BVEBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
-1
IC = -1mA, IB = 0
V
IE = -50μA, IC = 0
VCB = -20V, IE = 0
VEB = - 4V, IC = 0
⎯
⎯
μA
μA
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
-0.8
270
V
VCE(sat)
hFE
⎯
120
⎯
⎯
IC = -2A, IB = -0.2A
⎯
VCE = -3V, IC = -0.5A
SMALL SIGNAL CHARACTERISTICS
VCE = -5V, IC = -0.1A,
f = 30MHz
Current Gain-Bandwidth Product
Output Capacitance
110
26
MHz
pF
fT
⎯
⎯
⎯
⎯
Cobo
VCB = -10V, f = 1MHz
Notes:
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
1,000
400
350
V
= -3V
CE
T
A
= 150°C
800
I
I
= -5mA
= -4mA
B
B
300
T
A
= 125°C
= 85°C
250
200
150
T
600
400
200
0
A
I
I
= -3mA
= -2mA
B
B
T
= 25°C
= -55°C
0.1
A
100
T
A
I
= -1mA
B
50
0
0.001
0.01
1
10
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage
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November 2011
© Diodes Incorporated
2DB1182Q
Document number: DS35651 Rev. 1 - 2
2DB1182Q
0.4
0.3
1.2
1.0
0.8
V
= -3V
CE
I
/I = 10
B
C
T
= -55°C
A
0.2
0.6
0.4
T
= 25°C
= 85°C
A
T
= 150°C
A
T
= 125°C
T
A
A
0.1
0
T = 125°C
A
T
= 85°C
A
T
= 150°C
A
0.2
0
T
= 25°C
A
T
= -55°C
A
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
100
10
1.2
f = 1MHz
I
/I = 10
B
C
1.0
0.8
T
= -55°C
A
C
ibo
T
= 25°C
A
0.6
0.4
T
= 85°C
A
T
A
= 125°C
T
= 150°C
A
C
obo
0.2
0
0.1
1
10
100
0.001
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
-IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Capacitance Characteristics
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
140
120
V
= -5V
CE
f = 30MHz
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
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© Diodes Incorporated
2DB1182Q
Document number: DS35651 Rev. 1 - 2
2DB1182Q
Package Outline Dimensions
TO252
Dim Min Max Typ
2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
A
E
A
b3
c2
b
0.64 0.88 0.783
L3
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
E1
A2
D
H
D
6.00 6.20 6.10
D1 5.21
e
−
−
−
2.286
−
E
6.45 6.70 6.58
E1 4.32
−
−
L4
A1
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
e
3X b
2X b2
a
a
0°
10°
−
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Value (in mm)
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Y2
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
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© Diodes Incorporated
2DB1182Q
Document number: DS35651 Rev. 1 - 2
2DB1182Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
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www.diodes.com
November 2011
© Diodes Incorporated
2DB1182Q
Document number: DS35651 Rev. 1 - 2
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DIODES
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