2DD2652-7 [DIODES]
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR; 低VCE （ SAT） NPN表面贴装晶体管
| 型号： | 2DD2652-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DD2652
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
Mechanical Data
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (2DB1689)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
•
•
•
•
•
•
C
E
B
Top View
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
15
Unit
V
Collector-Emitter Voltage
12
V
Emitter-Base Voltage
6
V
Collector Current - Continuous
Peak Pulse Collector Current
1.5
3
A
A
ICM
Thermal Characteristics
Characteristic
Symbol
Value
300
Unit
mW
Power Dissipation (Note 3) @ TA = 25°C
PD
417
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
°C/W
mW
Rθ
JA
500
PD
250
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
15
12
6
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 10μA, IE = 0
C = 1mA, IB = 0
V
E = 10μA, IC = 0
0.1
⎯
⎯
μA
μA
VCB = 15V, IE = 0
VEB = 6V, IC = 0
Emitter Cut-Off Current
0.1
IEBO
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
80
200
680
mV
VCE(SAT)
hFE
⎯
270
IC = 500mA, IB = 25mA
VCE = 2V, IC = 200mA
⎯
⎯
SMALL SIGNAL CHARACTERISTICS
VCB = 10V, IE = 0,
f = 1MHz
Output Capacitance
11
pF
Cobo
fT
⎯
⎯
⎯
⎯
V
CE = 2V, IC = 100mA,
Current Gain-Bandwidth Product
260
MHz
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2652
Document number: DS31633 Rev. 2 - 2
2DD2652
0.6
0.5
1.8
1.6
1.4
I
= 5mA
B
0.4
0.3
0.2
1.2
1.0
0.8
0.6
0.4
I
= 4mA
B
I
I
= 3mA
B
(Note 4)
= 2mA
B
(Note 3)
I
= 1mA
B
0.1
0
0.2
0
0
0.5
1
1.5
2
2.5
3
200
0
175
25
50
150
75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
1,000
100
10
T
= 150°C
A
I
/I = 20
B
C
T
= 85°C
= 25°C
A
T
A
0.1
0.01
T
= -55°C
A
T
= 150°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
V
= 2V
CE
0.001
0.1
1
10
100
1,000 10,000
0.1
1
10
100
1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
1.0
1.2
1.0
I
/I = 20
C
B
V
= 2V
CE
0.8
0.8
T
= -55°C
A
T
T
= -55°C
= 25°C
A
0.6
0.4
0.6
0.4
T
T
= 25°C
= 85°C
A
A
A
T
= 85°C
A
T
= 150°C
A
0.2
0
0.2
0
T
= 150°C
A
1
10
100
1,000
10,000
0.1
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2652
Document number: DS31633 Rev. 2 - 2
2DD2652
1,000
100
f = 1MHz
C
ibo
10
1
C
obo
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
Ordering Information (Note 6)
Part Number
Case
Packaging
2DD2652-7
SOT-323
3000/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
RN2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
RN2
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-323
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.40
1.35
2.20
-
1.40
2.20
0.10
1.00
0.40
0.18
8°
Typ
0.30
1.30
2.10
0.65
1.30
2.15
0.05
1.00
0.30
0.11
-
0.25
1.15
2.00
-
1.20
1.80
0.0
0.90
0.25
0.10
0°
C
B
G
H
K
M
M
α
J
L
D
All Dimensions in mm
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2652
Document number: DS31633 Rev. 2 - 2
2DD2652
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
Z
C
E
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2652
Document number: DS31633 Rev. 2 - 2
相关型号：
2DDF100P
D Subminiature Connector, 100 Contact(s), Male, 0.075 inch Pitch, Crimp Terminal, Hole .087-.098, Receptacle,
ITT
2DDF100PBRP
D Type Connector, 100 Contact(s), Male, 0.075 inch Pitch, Solder Terminal, #4-40, Receptacle
ITT
2DDF100PBRPFO
D Type Connector, 100 Contact(s), Male, 0.075 inch Pitch, Solder Terminal, #4-40, Receptacle
ITT
2DDF100S
D Subminiature Connector, 100 Contact(s), Female, 0.075 inch Pitch, Crimp Terminal, Hole .087-.098, Plug
ITT
©2020 ICPDF网 联系我们和版权申明