2N7002_17 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR;
| 型号： | 2N7002_17 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
I
D max
V(BR)DSS
RDS(ON) max
7.5Ω @ VGS = 5V
TA = +25°C
60V
210mA
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Applications
Motor Control
Power Management Functions
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View
Equivalent Circuit
Top View
Ordering Information (Note 5)
Part Number
2N7002-7-F
2N7002-13-F
2N7002Q-7-F
Compliance
Standard
Standard
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
SOT23
SOT23
SOT23
Automotive
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
K72
K72
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code
N
P
R
S
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 33 - 2
2N7002
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
60
Drain-Gate Voltage RGS 1.0M
VDGR
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
VGSS
T
A = +25°C
TA = +85°C
A = +100°C
170
120
105
Steady
State
mA
Continuous Drain Current (Note 6) VGS = 10V
ID
T
T
A = +25°C
210
150
135
Steady
State
mA
Continuous Drain Current (Note 7) VGS = 10V
TA = +85°C
ID
T
A = +100°C
Pulsed
Continuous
0.5
2
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
A
IS
800
mA
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
370
540
348
241
91
Units
(Note 6)
Total Power Dissipation
(Note 7)
mW
PD
(Note 6)
(Note 7)
(Note 7)
Thermal Resistance, Junction to Ambient
RθJA
°C/W
°C
Thermal Resistance, Junction to Case
RθJC
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
60
70
V
BVDSS
IDSS
1.0
500
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
@ TC = +25°C
@ TC = +125°C
µA
nA
Gate-Body Leakage
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
2.5
V
VGS(th)
VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
Static Drain-Source On-Resistance
@ TJ = +25°C
7.5
5.0
13.5
3.2
4.4
@ TJ = +25°C RDS(ON)
@ TJ = +125°C
V
GS = 10V, ID = 0.5A
On-State Drain Current
0.5
80
1.0
0.78
A
mS
V
ID(ON)
gFS
1.5
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Forward Transconductance
Diode Forward Voltage
VSD
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
22
11
50
25
pF
pF
pF
Ciss
Coss
Crss
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
2.0
5.0
V
DS = 0V, VGS = 0V,
Ω
Gate resistance
120
Rg
f = 1.0MHz
223
82
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
Qgs
Qgd
pC
VDS = 10V, ID = 250mA
Gate-Drain Charge
178
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
2.8
3.0
7.6
5.6
tD(on)
tr
tD(off)
tf
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V,
RGEN = 25
Turn-On Rise Time
ns
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 33 - 2
2N7002
7
6
5
1.0
0.8
0.6
0.4
0.2
0
4
3
2
1
0
4
5
0
1
2
0
0.2
0.4
0.6
0.8
1.0
3
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance vs. Drain Current
6
5
3.0
2.5
4
3
2
ID = 500mA
ID = 50mA
2.0
1.5
1.0
1
0
VGS = 10V,
ID = 200mA
-55 -30
Tj, JUNCTION TEMPERATURE (
Fig. 3 On-Resistance vs. Junction Temperature
-5
20
45
70 95
120 145
0
2
4
6
8
10 12 14 16 18
°
C)
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
10
400
9
8
7
6
5
4
350
300
250
200
150
100
3
2
50
0
1
0
1
50
TA, AMBIENT TEMPERATURE (
Fig. 6 Max Power Dissipation vs. Ambient Temperature
75
125 150 175
0
0.2
0.6
ID, DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
0.8
0
25
100
200
0.4
°C)
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© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 33 - 2
2N7002
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
A
B
C
D
F
G
H
J
K
K1
L
M
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
D
-
F
L
0.45
0.085 0.18
0° 8°
0.61
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
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© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 33 - 2
2N7002
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS11303 Rev. 33 - 2
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