AZ494DMTR-E1 [DIODES]
Switching Regulator/Controller, Voltage-mode, 0.2A, 300kHz Switching Freq-Max, PDSO16;型号: | AZ494DMTR-E1 |
厂家: | DIODES INCORPORATED |
描述: | Switching Regulator/Controller, Voltage-mode, 0.2A, 300kHz Switching Freq-Max, PDSO16 CD 开关 光电二极管 |
文件: | 总12页 (文件大小:759K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
General Description
Features
The AZ494B/D is a voltage mode pulse width modula-
tion switching regulator control circuit designed pri-
marily for power supply control.
·
·
·
·
·
·
Stable 4.95V for AZ494B or 5V for AZ494D Ref-
erence Voltage Trimmed to ±1.5% Accuracy
Uncommitted Output TR for 200mA Sink or
Source Current
Single-End or Push-Pull Operation Selected by
Output Control
Internal Circuitry Prohibits Double Pulse at Either
Output
Complete PWM Control Circuit with Variable
Duty Cycle
The AZ494B/D consists of a reference voltage circuit,
two error amplifiers, an on-chip adjustable oscillator, a
dead-time control (DTC) comparator, a pulse-steering
control flip-flop, and an output control circuit. The
AZ494B/D is capable for push-pull or single-ended
output operation, which can be selected through the
output control.
On-Chip Oscillator with Master or Slave Opera-
tion
AZ494B has 4.95V and AZ494D has 5V reference
voltage respectively. The precision of voltage reference
Applications
(V ) is improved up to ± 1.5% through trimming
REF
and this provides a better output voltage regulation.
·
·
·
SMPS
Back Light Inverter
Charger
The AZ494B/D is available in standard packages of
DIP-16 and SOIC-16.
DIP-16
SOIC-16
Figure 1. Package Types of AZ494B/D
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
1
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Pin Configuration
M/P Package
(SOIC-16/DIP-16)
1IN +
1IN -
2IN +
2IN -
1
2
3
4
16
15
FEEDBACK
DTC
REF
14
13
12
11
10
9
OUTPUT CTRL
5
6
CT
RT
V
CC
C2
7
8
GND
C1
E2
E1
Figure 2. Pin Configuration of AZ494B/D (Top View)
Output Function Control Table
Signal for Output Control
Output Function
VI = GND
Single-ended or parallel output
VI = VREF
Normal push-pull operation
Functional Block Diagram
OUTPUT CTRL
13
6
8
RT
C1
5
Oscillator
Pulse-Steering
CT
Flip-Flop
Q1
Dead-Time Control
Comparator
9
E1
D
4
C2
11
+
DTC
CK
0.12V
Q2
Error Amplifier 1
+
+
10
E2
PWM
Comparator
1
2
1IN +
1IN -
12
VCC
Error Amplifier 2
+
16
15
Reference
Regulator
14
2IN +
2IN -
REF
0.7mA
7
GND
3
FEEDBACK
Figure 3. Functional Block Diagram of AZ494B/D
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
2
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Ordering Information
AZ494
-
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-16
P: DIP-16
Reference Voltage
B: 4.95V
D: 5.0V
Part Number
Marking ID
Lead Free
Temperature
Package
Packing Type
Range
Tin Lead
AZ494BM
Lead Free
AZ494BM-E1
Tin Lead
AZ494BM
Tube
AZ494BM-E1
Tape & Reel
Tube
AZ494BMTR
AZ494DM
AZ494BMTR-E1
AZ494DM-E1
AZ494BM
AZ494DM
AZ494DM
AZ494BM-E1
AZ494DM-E1
AZ494DM-E1
SOIC-16
-40 to 85oC
AZ494DMTR
AZ494DMTR-E1
Tape & Reel
Tube
AZ494BP
AZ494DP
AZ494BP-E1
AZ494DP-E1
AZ494BP
AZ494DP
AZ494BP-E1
AZ494DP-E1
DIP-16
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
3
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VCC
VI
Value
40
Unit
V
Supply Voltage (Note 2)
Amplifier Input Voltage
Collector Output Voltage
Collector Output Current
-0.3 to VCC + 0.3
V
VO
40
V
IO
250
mA
M Package
P Package
73
67
Package Thermal Impedance
(Note 3)
oC/W
RθJA
oC
oC
V
Lead Temperature 1.6mm from case for 10 seconds
Storage Temperature Range
260
-65 to 150
200
TSTG
ESD rating (Machine Model)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings"for extended periods may affect device reliability.
Note 2: All voltage values are with respect to the network ground terminal.
Note 3: Maximum power dissipation is a function of T (max), RθJA and T . The maximum allowable power dissi-
J
A
pation at any allowable ambient temperature is P = ( T (max) - T ) / RθJA. Operating at the absolute maximum T
D
J
A
J
o
of 150 C can affect reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
7
Max
36
Unit
V
VCC
Supply Voltage
VI
VCC - 2
Amplifier Input Voltage
-0.3
V
VO
36
V
Collector Output Voltage
Collector Output Current
(Each Transistor)
200
mA
Current Into Feedback Terminal
Oscillator Frequency
0.3
300
10000
500
85
mA
KHz
nF
fosc
CT
Timing Capacitor
0.47
1.8
RT
Timing Resistor
KΩ
oC
TA
Operating Free-Air Temperature
Reference Output Current
-40
IREF
10
mA
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
4
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Electrical Characteristics
o
T = 25 C, V =15V, f=10KHz unless otherwise noted.
A
CC
Parameter
Symbol Conditions (Note 4)
Min
Typ
Max
Unit
Reference Section
for AZ494B
for AZ494D
VREF
VREF
IREF=1mA
IREF=1mA
4.875 4.95
5.025
5.075
V
V
Output Reference
Voltage
4.925
5.0
RLINE VCC = 7V to 36V
Line Regulation
Load Regulation
2
1
25
15
mV
mV
mA
RLOAD IREF=1mA to 10mA
ISC
VREF = 0V
Short-Circuit Output Current(Note 5)
25
Oscillator Section, CT = 0.01µF, RT = 12KΩ (See Figure 4)
fosc
Frequency
10
100
1
KHz
All values of VCC, CT, RT and TA
constant
Standard Deviation of Frequency
(Note 6)
Hz/KHz
Hz/KHz
Hz/KHz
V
CC=7V to 36V, TA = 25oC
Frequency Change with Voltage
Frequency Change with Temperature
(Note 7)
∆TA= MIN to MAX
10
Error-Amplifier Section
Input Offset Voltage
Input Offset Current
Input Bias Current
VIO
IIO
VO (FEEDBACK) = 2.5V
VO (FEEDBACK) = 2.5V
VO (FEEDBACK) = 2.5V
2
10
250
1
mV
nA
µA
25
0.2
IBIAS
VCC
-
VCM
VCC=7V to 36V
Common-Mode Input Voltage Range
-0.3
70
V
2
∆VO = 3V, RL =2KΩ,
VO =0.5V to 3.5V
Large-Signal Open-Loop Voltage
Gain
AVO
95
dB
Unity-Gain Bandwidth
GB
800
80
KHz
dB
VCC=7V to 36V
Common-Mode Rejection Ratio
CMRR
65
VID = -15mV to -5V,
ISINK
Output Sink Current (FEEDBACK)
Output Source Current (FEEDBACK)
- 0.3 - 0.7
2
mA
mA
V(FEEDBACK) = 0.7V
VID = 15mV to 5V, V(FEED-
BACK) = 3.5V
ISOURCE
Output Section
IC, OFF
IE, OFF
VCE = 36V, VCC=36V
Collector Off-State Current
Emitter Off-State Current
Common
2
100
µA
µA
VCC = VC = 36V, VE = 0
-100
1.3
VE = 0, IC =200mA
1.1
1.5
Emitter
Collector-Emitter
V
Saturation Voltage
VO (C1 or C2) = 15V,
Emitter
2.5
Follower
IE = -200mA
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
5
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Electrical Characteristics (Continued)
Parameter
Symbol
Conditions (Note 4)
Min Typ Max
Unit
VI = VREF
Output Control Input Current
Dead-Time Control Section
Input Bias Current
3.5
mA
VI = 0 to 5.25V
-2
45
3
-10
µA
VI (DEAD-TIME CTRL) = 0, CT
Maximum Duty Cycle,
Each Output
%
=0.01µF, RT =12KΩ
Zero Duty Cycle
3.3
4.5
Input Threshold Voltage
V
Maximum Duty Cycle
0
PWM Comparator Section (See Figure 4)
Input Threshold Voltage (FEEDBACK)
Input Sink Current (FEEDBACK)
Total Device
Zero duty cycle
4
V
V(FEEDBACK) = 0.7V
-0.3
-0.7
mA
VRT=VREF
,
All VCC = 15V
6
9
10
15
ISTDBY
Standby Supply Current
mA
mA
other inputs and
outputs open
VCC = 36V
VI (DEAD-TIME-CTRL) =2V
See Figure 4.
Average Supply Current
7.5
Switching Characteristics
Rise Time
tr
tf
tr
tf
100 200
25 100
100 200
40 100
ns
ns
ns
ns
Common-emitter Configuration
See Figure 6
Fall Time
Rise Time
Emitter-follower Configuration
See Figure 7
Fall Time
Note 4: For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating
conditions.
Note 5: Duration of the short circuit should not exceed one second.
Note 6: Standard deviation is a measure of the statistical distribution about the mean as derived from the formula:
Note 7: Temperature coefficient of timing capacitor and timing resistor are not taken into account.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
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Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Parameter Measurement information
VCC = 15V
12
150Ω
4W
150Ω
4W
VCC
4
3
8
9
DTC
C1
E1
Output 1
Test
Inputs
FEEDBACK
12KΩ
6
11
10
RT
CT
C2
E2
Output 2
5
1
0.01µF
1IN+
1IN-
2
16
15
13
2IN+
2IN-
14
OUTPUT
CTRL
REF
GND
50KΩ
7
Test Circuit
VCC
0V
Voltage
at C1
VCC
0V
Voltage
at C2
Voltage
at CT
Threshold Voltage
DTC
0V
Threshold Voltage
FEEDBACK
0.7V
0%
0%
MAX
Duty Cycle
Voltage Waveforms
Figure 4. Operational Test Circuit and Waveforms
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
7
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Parametr Measurement information (Continued)
Amplifier Under Test
FEEDBACK
+
+
VI
Vref
Other Amplifier
Figure 5. Error Amplifier Characteristics
15V
68Ω
4W
tf
tr
Each Output
Circuit
Output
90%
90%
CL = 15pF
(See Note A)
10%
10%
Note A: CL includes probe and jig capacitance.
Figure 6. Common-Emitter Configuration
15V
Each Output
Circuit
90%
90%
Output
10%
10%
tf
68Ω
4W
CL = 15pF
(See Note A)
tr
Note A: CL includes probe and jig capacitance.
Figure 7. Emitter-Follower Configuration
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
8
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Typical Performance Characteristics
100k
VCC=15V
TA=25oC
0.001µF
10k
0.01µF
1k
0.1µF
CT=1µF
100
10
1k
10k
100k
1M
Timing Resistance (Ω)
Figure 8. Oscillator Frequency vs. RT and CT
100
90
80
70
60
50
40
30
20
10
0
VCC=15V
VO=3V
TA=25oC
∆
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
9
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Mechanical Dimensions
SOIC-16
Unit: mm(inch)
1.350(0.053)
1.750(0.069)
1.250(0.049)
1.650(0.065)
0.330(0.013)
0.510(0.020)
A
20:1
B
0.250(0.010)
0.400(0.016)
1.270(0.050)
0°
8°
R0.200(0.008)
R0.200(0.008)
0.200(0.008)
0.250(0.010)
0.050(0.002)
0.250(0.010)
5.800(0.228)
6.240(0.246)
C-C
50:1
3.800(0.150)
4.040(0.159)
B
20:1
8°
C
C
0.200(0.008)
φ
S 1.000(0.039)
3°
7°
Depth 0.200(0.008)
A
0.400(0.016)×45°
Note: Eject hole, oriented hole and mold mark is optional.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
10
Data Sheet
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
AZ494B/D
Mechanical Dimensions (Continued)
DIP-16
Unit: mm(inch)
Note: Eject hole, oriented hole and mold mark is optional.
BCD Semiconductor Manufacturing Limited
Sep. 2009 Rev. 1. 3
11
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
o
- Headquarters
- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
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相关型号:
AZ494DP-E1
Switching Regulator/Controller, Voltage-mode, 0.2A, 300kHz Switching Freq-Max, PDIP16
DIODES
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