BC807-40W-7 [DIODES]

PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
BC807-40W-7
型号: BC807-40W-7
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

PNP SURFACE MOUNT TRANSISTOR
PNP表面贴装晶体管

晶体 小信号双极晶体管 开关 光电二极管
文件: 总3页 (文件大小:356K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPICE MODELS: BC807-16W BC807-25W BC807-40W  
BC807-16W / -25W / -40W  
PNP SURFACE MOUNT TRANSISTOR  
Lead-free Green  
Features  
·
·
·
·
·
·
Ideally Suited for Automatic Insertion  
Epitaxial Planar Die Construction  
For Switching, AF Driver and Amplifier Applications  
Complementary NPN Types Available (BC817-xxW)  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT-323  
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
A
C
B
Mechanical Data  
C
B
C
·
Case: SOT-323  
D
0.65 Nominal  
B
E
·
Case Material: Molded Plastic. "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
G
H
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish – Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
K
M
J
·
·
Pin Connections: See Diagram  
Marking:  
K
J
0.90  
0.25  
0.10  
0°  
L
D
E
P/N  
Marking  
K5A  
L
BC807-16W  
BC807-25W  
BC807-40W  
M
K5B  
a
K5C  
All Dimensions in mm  
·
·
Ordering & Date Code Information: See Page 3  
Approximate Weight: 0.006 grams  
@TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCEO  
VEBO  
IC  
Value  
-45  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-5.0  
V
-500  
mA  
mA  
mA  
mW  
°C/W  
°C  
ICM  
Peak Collector Current  
Peak Emitter Current  
-1000  
-1000  
200  
IEM  
Power Dissipation at TSB = 50°C (Note 3)  
Pd  
R
qJA  
625  
Thermal Resistance, Junction to Ambient Air (Note 3)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
@TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic (Note 4)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
DC Current Gain  
Current Gain Group -16  
VCE = -1.0V, IC = -100mA  
100  
160  
250  
60  
100  
170  
250  
400  
600  
-25  
-40  
hFE  
Current Gain Group -16  
VCE = -1.0V, IC = -300mA  
-25  
-40  
IC = -500mA, IB = -50mA  
VCE = -1.0V, IC = -300mA  
VCE(SAT)  
VBE  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-0.7  
-1.2  
V
V
VCE = -45V  
-100  
-5.0  
nA  
µA  
ICES  
IEBO  
fT  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
Gain Bandwidth Product  
VCE = -25V, Tj = 150°C  
VEB = -4.0V  
-100  
nA  
MHz  
pF  
VCE = -5.0V, IC = -10mA,  
f = 50MHz  
100  
VCB = -10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
12  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Short duration pulse test used to minimize self-heating effect.  
DS30577 Rev. 5 - 2  
1 of 3  
BC807-16W / -25W / -40W  
www.diodes.com  
ã Diodes Incorporated  
400  
1000  
See Note 1  
T
A
= 25°C  
f = 20MHz  
300  
200  
100  
0
-V = 5.0V  
CE  
1.0V  
100  
10  
1
10  
100  
1000  
0
100  
200  
-I , COLLECTOR CURRENT (mA)  
C
T
SB  
, SUBSTRATE TEMPERATURE (°C)  
Fig. 1, Power Derating Curve  
Fig. 2, Gain-Bandwidth Product vs Collector Current  
0.5  
0.4  
0.3  
1000  
100  
10  
-V = 1V  
CE  
typical  
limits  
at T = 25°C  
A
150°C  
-I / -I = 10  
B
C
25°C  
-50°C  
0.2  
25°C  
150°C  
0.1  
-50°C  
0
0.1  
1
10  
1000  
0.1  
1
10  
100  
100  
1000  
-I , COLLECTOR CURRENT (mA)  
C
-I , COLLECTOR CURRENT (mA)  
C
Fig. 3, Collector Sat. Voltage vs Collector Current  
Fig. 4, DC Current Gain vs Collector Current  
500  
400  
300  
100  
3.2  
2.8  
0.35  
2.4  
0.3  
80  
2
1.8  
0.25  
1.6  
1.4  
60  
0.2  
1.2  
0.8  
0.15  
40  
200  
100  
0
0.6  
0.1  
0.4  
20  
-I = 0.05mA  
B
-I = 0.2mA  
B
0
0
10  
20  
0
1
2
-V , COLLECTOR-EMITTER VOLTAGE (V)  
CE  
-V , COLLECTOR-EMITTER VOLTAGE (V)  
CE  
Fig. 5, Typical Emitter-Collector Characteristics  
Fig. 6, Typical Emitter-Collector Characteristics  
DS30577 Rev. 5 - 2  
2 of 3  
www.diodes.com  
BC807-16W / -25W / -40W  
(Note 5)  
Ordering Information  
Device*  
Packaging  
Shipping  
BC807-xxW-7  
SOT-323  
3000/Tape & Reel  
Notes:  
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
* xx = gain group, e.g. BC807-16W-7.  
Marking Information  
XXX = Product Type Marking Code (See Page 1), e.g. K5A = BC807-16  
YM = Date Code Marking  
Y = Year ex: S = 2005  
XXX  
M = Month ex: 9 = September  
Date Code Key  
Year  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreetoholdDiodes Incorporatedand all thecompanies whose products arerepresentedon ourwebsite, harmless againstall damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the  
President of Diodes Incorporated.  
DS30577 Rev. 5 - 2  
3 of 3  
BC807-16W / -25W / -40W  
www.diodes.com  

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