BC847BT [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
| 型号： | BC847BT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Die Construction
Complementary PNP Type Available
(BC857AT,BT,CT)
·
Ultra-Small Surface Mount Package
SOT-523
Dim Min Max Typ
C
A
B
C
D
G
H
J
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
TOP VIEW
B
C
Mechanical Data
¾
¾
0.50
B
E
·
·
Case: SOT-523, Molded Plastic
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
A
Terminals: Solderable per MIL-STD-202,
Method 208
G
H
·
·
Terminal Connections: See Diagram
Weight: 0.002 grams (approx.)
K
L
K
J
M
N
M
N
D
L
All Dimensions in mm
Type
Marking
1E
BC847A
BC847B
BC847C
1F
1M
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
50
Unit
V
Collector-Base Voltage
V
Collector-Emitter Voltage
45
V
Emitter-Base Voltage
6.0
Collector Current
100
mA
mW
°C/W
°C
Pd
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
150
RqJA
833
Tj, TSTG
-55 to +150
(Note 2)
Ordering Information
Device
Packaging
SOT-523
SOT-523
SOT-523
Shipping
BC847AT-7
BC847BT-7
BC847CT-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30274 Rev. A-2
1 of 3
BC847AT, BT, CT
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain
(Note 3)
Current Gain A
B
C
Current Gain A
—
—
—
110
200
420
—
—
—
—
220
450
800
150
270
—
290
520
hFE
—
B
C
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
250
600
VCE(SAT)
VBE(SAT)
VBE
—
—
—
mV
mV
mV
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
(Note 3)
(Note 3)
(Note 3)
(Note 3)
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
700
900
—
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
580
—
660
—
700
770
VCB = 30V
VCB = 30V, TA = 150°C
ICBO
ICBO
15
5.0
nA
µA
Collector-Emitter Cutoff Current
—
—
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
Gain Bandwidth Product
Output Capacitance
100
—
—
—
—
—
MHz
pF
VCB = 10V, f = 1.0MHz
COBO
4.5
BC847BT
BC847CT
VCE = 5V, RS = 2.0kW,
f = 1.0kHz, BW = 200Hz
10
4.0
NF
—
dB
Noise Figure
Notes:
3. Short duration test pulse used to minimize self-heating effect.
DS30274 Rev. A-2
2 of 3
BC847AT, BT, CT
250
200
1000
VCE = 5V
100 C
(see Note 1)
TA = 25 C
100
150
-50 C
100
50
0
10
1
0.01
0.1
1.0
10
100
0
100
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
0.5
0.4
1000
100
10
TA = 25 C
IC / IB = 20
VCE = 10V
5V
2V
0.3
0.2
0.1
0
TA = 100 C
25 C
-50 C
0.1
1.0
10
100
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
Fig. 4, Gain Bandwidth Product vs Collector Current
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
DS30274 Rev. A-2
3 of 3
BC847AT, BT, CT
相关型号：
BC847BT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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