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BC847PN_1 [DIODES]

COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR; 互补对小信号表面贴装晶体管
BC847PN_1
型号： BC847PN_1
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
互补对小信号表面贴装晶体管

晶体 晶体管
文件： 总2页 (文件大小：128K)
中文：  中文翻译
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BC847PN  
BC847PN  
NPN  
PNP  
NPN  
PNP  
Complementary Surface Mount General Purpose Si-Planar Transistors  
Komplementäre Si-Planar Transistoren für die Oberflächenmontage  
Version 2006-09-05  
Power dissipation  
Verlustleistung  
300 mW  
SOT-363  
0.01 g  
2±0.1  
2 x 0.65  
0.9±0.1  
Plastic case  
Kunststoffgehäuse  
5
4
6
Type  
Code  
Weight approx. – Gewicht ca.  
1
2
3
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2.4  
Dimensions - Maße [mm]  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
6 = C1  
1 = E1  
5 = B2  
2 = B1  
4 = E2  
3 = C2  
Maximum ratings (TA = 25°C)  
per transistor – pro Transistor  
Grenzwerte (TA = 25°C)  
BC847PN  
45 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCBO  
VCEO  
VEB0  
Ptot  
IC  
50 V  
6 V  
300 mW 1)  
100 mA  
200 mA  
200 mA  
Collector current – Kollektorstrom (dc)  
Peak Collector current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
ICM  
IBM  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
VCE = 5 V, IC = 2 mA  
T1 - NPN  
T2 - PNP  
hFE  
hFE  
200  
220  
–
–
450  
475  
- VCE = 5 V, - IC = 2 mA  
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5 mA  
VCEsat  
VCEsat  
–
–
–
–
250 mV  
600 mV  
T1 - NPN  
T2 - PNP  
- IC = 10 mA, - IB = 0.5 mA  
- IC = 100 mA, - IB = 5 mA  
- VCEsat  
- VCEsat  
–
–
–
–
300 mV  
650 mV  
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
BC847PN  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)  
IC = 10 mA, IB = 0.5 mA  
T1 - NPN  
VBEsat  
VBEsat  
–
–
700 mV  
900 mV  
–
–
IC = 100 mA, IB = 5 mA  
- IC = 10 mA, - IB = 0.5 mA  
T2 - PNP  
- VBEsat  
- VBEsat  
–
–
700 mV  
–
–
- IC = 100 mA, - IB = 5 mA  
950 mV  
Base-Emitter-voltage – Basis-Emitter-Spannung 2)  
IC = 2 mA, VCE = 5 V  
T1 - NPN  
VBE  
VBE  
580 mV  
–
–
–
700 mV  
720 mV  
IC = 10 mA, VCE = 5 V  
- IC = 2 mA, - VCE = 5 V  
T2 - PNP  
- VBE  
- VBE  
600 mV  
–
–
–
750 mV  
820 mV  
- IC = 10 mA, - VCE = 5 V  
Collector-Base cutoff current – Kollektor-Basis-Reststrom  
VCB = 30 V, (E open)  
T1 - NPN  
T2 - PNP  
ICB0  
–
–
–
–
15 nA  
15 nA  
- VCB = 30 V, (E open)  
- ICB0  
Emitter-Base cutoff current  
VEB = 5 V, (C open)  
T1 - NPN  
T2 - PNP  
IEB0  
–
–
–
–
100 nA  
100 nA  
- VEB = 5 V, (C open)  
- IEB0  
Gain-Bandwidth Product – Transitfrequenz  
VCE = 5 V, IC = 10 mA, f = 100 MHz  
- VCE = 5 V, - IC = 10 mA, f = 100 MHz  
Collector-Base Capacitance – Kollektor-Basis-Kapazität  
VCB = 10 V, IE =ie = 0, f = 1 MHz  
- VCB = 10 V, IE =ie = 0, f = 1 MHz  
T1 - NPN  
T2 - PNP  
fT  
fT  
100 MHz  
100 MHz  
–
–
–
–
T1 - NPN  
T2 - PNP  
CCBO  
CCBO  
–
–
–
–
6 pF  
4.5 pF  
Thermal resistance junction to ambient air  
Wärmewiderstand Sperrschicht – umgebende Luft  
RthA  
< 420 K/W 1)  
Pinning – Anschlussbelegung  
6
5
4
T1: E1 = 1, C1 = 6, B1 = 2  
T2: E2 = 4, C2 = 3, B2 = 5  
T2  
T1  
1
2
3
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  
 
 

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