首页 |元器件品牌 | PCB在线计价/下单
首页 > BSS123W-7-F

BSS123W-7-F

更新时间：2024-09-18 05:26:56
品牌：DIODES
描述：N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF下载

中文翻译

PCB计价

BSS123W-7-F 概述

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N沟道增强型网络场效晶体管 MOS管 小信号场效应晶体管

BSS123W-7-F 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOT-323, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：13 weeks
风险等级：1.19其他特性：HIGH RELIABILITY, LOW THRESHOLD
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：0.17 A最大漏极电流 (ID)：0.17 A
最大漏源导通电阻：10 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：6 pFJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：FET General Purpose Powers
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

BSS123W-7-F 数据手册

通过下载BSS123W-7-F数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
SPICE MODELS: BSS123W  
BSS123W  
Lead-free Green  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
·
·
Low Gate Threshold Voltage  
A
SOT-323  
Low Input Capacitance  
D
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
Fast Switching Speed  
Low Input/Output Leakage  
B
C
B
High Drain-Source Voltage Rating  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device, Note 3 and 4  
C
G
S
G
H
D
0.65 Nominal  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
K
J
G
H
M
Mechanical Data  
J
·
·
Case: SOT-323  
L
D
E
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
K
0.90  
0.25  
0.10  
0°  
Drain  
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
M
a
Terminals: Solderable per MIL-STD-202, Method 208  
Gate  
All Dimensions in mm  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Source  
·
·
·
Marking: Date Code and Type Code, See Page 3  
Type Code: K23  
Weight: 0.006 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
Value  
100  
Units  
V
V
V
Drain-Source Voltage  
VDGR  
100  
Drain-Gate Voltage RGS £ 20KW  
Gate-Source Voltage  
VGSS  
Continuous  
±20  
ID  
IDM  
Drain Current (Note 1)  
Continuous  
Pulsed  
170  
680  
mA  
Pd  
Total Power Dissipation (Note 1)  
200  
625  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product  
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30368 Rev. 6 - 2  
1 of 4  
BSS123W  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BVDSS  
IDSS  
V
GS = 0V, ID = 250mA  
100  
¾
¾
¾
¾
¾
V
VDS = 100V, VGS = 0V  
DS = 20V, VGS = 0V  
µA  
nA  
1.0  
10  
Zero Gate Voltage Drain Current  
V
VGS = 20V, VDS = 0V  
IGSSF  
Gate-Body Leakage, Forward  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
¾
50  
nA  
VDS = VGS, ID = 1mA  
VGS = 10V, ID = 0.17A  
GS = 4.5V, ID = 0.17A  
VGS(th)  
0.8  
1.4  
2.0  
V
¾
¾
¾
¾
6.0  
10  
RDS (ON)  
Static Drain-Source On-Resistance  
W
V
VDS = 10V, ID = 0.17A, f = 1.0KHz  
VGS = 0V, IS = 0.34A  
gFS  
Forward Transconductance  
Drain-Source Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
80  
370  
¾
mS  
V
VSD  
¾
0.84  
1.3  
Ciss  
Coss  
Crss  
¾
¾
¾
29  
10  
2
60  
15  
6
pF  
pF  
pF  
V
DS = 25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Rise Time  
tr  
¾
¾
¾
¾
¾
¾
¾
¾
8
16  
8
ns  
ns  
ns  
ns  
tf  
Turn-Off Fall Time  
V
R
DD = 30V, ID = 0.28A,  
GEN = 50W, VGS = 10V  
tD(ON)  
tD(OFF)  
Turn-On Delay Time  
Turn-Off Delay Time  
13  
Notes:  
5. Short duration test pulse used to minimize self-heating effect.  
2.4  
2.0  
0.7  
0.6  
VGS = 10, 7, 6, 5V  
0.5  
VGS = 4V  
VGS = 4V  
VGS = 3V  
0.4  
0.3  
0.2  
1.6  
1.2  
VGS = 3V  
VGS = 5, 6, 7, 10V  
0.1  
0
0.8  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
1
2
4
0
3
5
ID, DRAIN-SOURCE CURRENT (A)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 On-Region Characteristics  
Fig. 2 On-Resistance Variation with Gate Voltage  
and Drain-Source Current  
DS30368 Rev. 6 - 2  
2 of 4  
www.diodes.com  
BSS123W  
2.2  
2
1.2  
1.1  
1
1.8  
VGS = 10V  
ID = 170m  
1.6  
1.4  
1.2  
1
0.9  
0.8  
0.7  
0.8  
0.6  
0.4  
-50 -25  
0
25  
50 75 100 125  
150  
-50 -25  
0
25  
50 75 100 125  
150  
TJ, JUNCTION TEMPERATURE (ºC)  
Fig. 4 On-Resistance Variation with Temperature  
TJ, JUNCTION TEMPERATURE (ºC)  
Fig. 3 Gate Threshold Variation with Temperature  
f = 1.0MHz  
250  
50  
200  
150  
100  
50  
40  
30  
Ciss  
20  
10  
0
Coss  
Crss  
0
200  
0
100  
5
10  
20  
0
15  
25  
TA, AMBIENT TEMPERATURE (°C)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 5 Typical Capacitance  
Fig. 6 Power Derating Curve, Total Package  
(Note 4 & 6)  
Ordering Information  
Device  
Packaging  
SOT-323  
Shipping  
BSS123W-7-F  
3000/Tape & Reel  
Notes: 4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product  
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K23 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
K23  
M = Month ex: 9 = September  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
N
P
R
S
T
U
V
W
Month  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
Code  
1
2
3
4
5
6
7
8
9
O
N
D
DS30368 Rev. 6 - 2  
3 of 4  
www.diodes.com  
BSS123W  
IMPORTANT NOTICE  
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-  
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;  
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such  
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.  
LIFE SUPPORT  
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the  
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.  
DS30368 Rev. 6 - 2  
4 of 4  
BSS123W  
www.diodes.com  

BSS123W-7-F 替代型号

型号 制造商 描述 替代类型 文档
BSS123W-7 DIODES Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met 类似代替

BSS123W-7-F 相关器件

型号 制造商 描述 价格 文档
BSS123WF2 YANGJIE Small Signal Field-Effect Transistor, 获取价格
BSS123WQ DIODES N-CHANNEL ENHANCEMENT MODE MOSFET 获取价格
BSS123W_0711 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 获取价格
BSS123W_1 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 获取价格
BSS123X YANGJIE SOT-563 获取价格
BSS123Z UTC N-CH 获取价格
BSS123_08 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 获取价格
BSS123_1 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 获取价格
BSS123_10 INFINEON SIPMOS Small-Signal-Transistor 获取价格
BSS123_FAIRCHILD FAIRCHILD 获取价格

BSS123W-7-F 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6

    • 热门型号

  • LM358
  • UPC8158
  • XC6105A618
  • 2N5087/D28Z
  • TMM-136-06-S-S-SM-23-P
  • NC7WZ16P6X
  • SDR10KSM
  • STC53K33N07
  • ERG3SG242
  • M2XRP2-J1Z1-R
  • TMM-139-01-G-S-SM
  • 54F20
  • TMP513
  • SZ6A11
  • PEL12S
  • 概述
  • 规格参数
  • 数据手册
  • 替代型号
    • 2024 ICPDF网 联系我们和版权申明:QQ 272164286