BSS123WF2 [YANGJIE]

Small Signal Field-Effect Transistor,;
BSS123WF2
型号: BSS123WF2
厂家: YANGZHOU YANGJIE ELECTRONIC CO., LTD    YANGZHOU YANGJIE ELECTRONIC CO., LTD
描述:

Small Signal Field-Effect Transistor,

开关 光电二极管 晶体管
文件: 总6页 (文件大小:599K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RoHS  
COMPLIANT  
BSS123W  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
100V  
ID  
200mA  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
5.0ohm  
5.5ohm  
General Description  
Trench Power MV MOSFET technology  
Voltage controlled small signal switch  
High density cell design for low RDS(ON)  
Fast Switching Speed  
Applications  
Small servo motor control  
Power MOSFET gate drivers  
Switching application  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
100  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Drain Current  
VDS  
VGS  
±20  
V
TA=25@ Steady State  
TA=70@ Steady State  
200  
160  
ID  
mA  
mA  
mW  
/ W  
Pulsed Drain Current A  
Total Power Dissipation @ TA=25℃  
IDM  
800  
350  
PD  
Thermal Resistance Junction-to-Ambient @ Steady State B  
Junction and Storage Temperature Range  
RθJA  
357  
TJ ,TSTG  
-55+150  
Ordering Information (Example)  
PACKING  
PREFERED P/N  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
Marking  
DELIVERY MODE  
CODE  
BSS123  
F2  
B123.  
3000  
30000  
120000  
7“ reel  
1 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  
BSS123W  
Electrical Characteristics (T =25unless otherwise noted)  
J
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Units  
Static Parameter  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
BVDSS  
VGS= 0V, ID=250μA  
VDS=100V,VGS=0V  
VGS= ±20V, VDS=0V  
VGS= ±10V, VDS=0V  
VDS= VGS, ID=250μA  
VGS= 10V, ID=200mA  
VGS= 4.5V, ID=200mA  
IS=200mA,VGS=0V  
100  
V
IDSS  
1
μA  
nA  
nA  
V
IGSS1  
IGSS2  
VGS(th)  
±100  
±50  
2.5  
Gate-Body Leakage Current  
Gate Threshold Voltage  
1.0  
1.8  
3.0  
3.5  
5.0  
Static Drain-Source On-Resistance  
RDS(ON)  
Ω
5.5  
Diode Forward Voltage  
Maximum Body-Diode Continuous Current  
Dynamic Parameters  
Input Capacitance  
VSD  
1.2  
V
IS  
200  
mA  
Ciss  
Coss  
Crss  
14  
10  
5
Output Capacitance  
VDS=50V,VGS=0V,f=1MHZ  
pF  
Reverse Transfer Capacitance  
Switching Parameters  
Total Gate Charge  
Qg  
tD(on)  
tr  
VGS=10V,VDS=50V,ID=0.2A  
1.8  
1.7  
9
2.5  
nC  
ns  
Turn-on Delay Time  
Turn-on Rise Time  
VGS=10V,VDD=50V, ID=0.2A,  
RGEN=6Ω  
Turn-off Delay Time  
tD(off)  
17  
7
Turn-off fall Time  
tf  
A. Pulse Test: Pulse Width300us,Duty cycle 2%.  
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  
2 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  
BSS123W  
Typical Performance Characteristics  
Figure1. Output Characteristics  
Figure2. Transfer Characteristics  
Figure3. Capacitance Characteristics  
Figure4. Gate Charge  
Figure5. Drain-Source on Resistance  
Figure6. Drain-Source on Resistance  
3 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  
BSS123W  
Figure7. Safe Operation Area  
Figure8. Switching wave  
4 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  
BSS123W  
SOT-323 Package information  
■SOT-323 Suggested Pad Layout  
5 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  
BSS123W  
Disclaimer  
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  
or otherwise.  
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  
of sale.  
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.  
6 / 6  
S-S1965  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev.2.0,25-Dec-18  

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