BSS84-13-F [DIODES]
P-CHANNEL ENHANCEMENT MODE MOSFET;型号: | BSS84-13-F |
厂家: | DIODES INCORPORATED |
描述: | P-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总5页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID
Low On-Resistance
V(BR)DSS
RDS(on) max
10 @ VGS = -5V
TA = +25°C
-130mA
Low Gate Threshold Voltage
-50V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT23
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
e3
MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
BSS84-7-F
BSS84Q-7-F
BSS84-13-F
BSS84Q-13-F
Qualification
Case
Packaging
Commercial
Automotive
Commercial
Automotive
SOT23
SOT23
SOT23
SOT23
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K84
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
K84
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
…
2011
2012
2013
2014
2015
2016
2017
Code
J
K
L
M
N
P
R
…
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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August 2013
© Diodes Incorporated
BSS84
Document number: DS30149 Rev. 20 - 2
BSS84
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
VDGR
VGSS
ID
Value
-50
Units
V
-50
V
Drain-Gate Voltage RGS 20K
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Continuous
Continuous
V
20
-130
-1.2
mA
A
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
300
Units
mW
C/W
C
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
417
R
JA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
BVDSS
IDSS
Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = -250µA
-50
V
V
V
DS = -50V, VGS = 0V, TJ = +25°C
DS = -50V, VGS = 0V, TJ = +125°C
-1
-2
-100
µA
µA
nA
Zero Gate Voltage Drain Current
VDS = -25V, VGS = 0V, TJ = +25°C
VGS = 20V, VDS = 0V
Gate-Body Leakage
nA
IGSS
10
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.8
0.05
-2.0
10
V
S
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = -1mA
VGS = -5V, ID = -0.100A
VDS = -25V, ID = -0.1A
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
45
25
12
pF
pF
pF
Ciss
Coss
Crss
Output Capacitance
VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
10
18
ns
ns
tD(ON)
V
DD = -30V, ID = -0.27A,
Turn-Off Delay Time
RGEN = 50, VGS = -10V
tD(OFF)
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
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August 2013
© Diodes Incorporated
BSS84
Document number: DS30149 Rev. 20 - 2
BSS84
400
350
-600
-500
300
250
200
150
100
50
-400
-300
-200
-100
0
0
25
50
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
75 100
175
125 150
200
0
-1
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
-2
-3
-4
-5
0
-1.0
10
9
-0.8
-0.6
-0.4
8
7
6
5
4
3
2
-0.2
0.0
TA = 125°C
1
0
TA = 25°C
0
-2
VGS, GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
-3
-4
-5
0
-1
-2
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
-3
-4
-5
-6
-1
-7
-8
15
12
25.0
20.0
V
I
= -10V
GS
= -0.13A
D
15.0
10.0
9
6
5.0
0.0
3
0
-0.2
-0.4
ID, DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
-0.6
-1.0
0.0
-0.8
-25
0
-50
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
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August 2013
© Diodes Incorporated
BSS84
Document number: DS30149 Rev. 20 - 2
BSS84
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT23
Dim
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
A
B
C
D
F
G
H
J
K
K1
L
M
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
D
-
F
L
0.45
0.085 0.18
0° 8°
0.61
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
2.9
0.8
0.9
2.0
1.35
Z
C
X
Y
C
E
E
X
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August 2013
© Diodes Incorporated
BSS84
Document number: DS30149 Rev. 20 - 2
BSS84
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
BSS84
Document number: DS30149 Rev. 20 - 2
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