BSS84-7-F [DIODES]

P-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	BSS84-7-F
厂家：	DIODES INCORPORATED
描述：	P-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总5页 (文件大小：101K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSS84

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_D



Low On-Resistance

V_(BR)DSS

R_{DS(on) max}

10 @ V_GS= -5V

T_A= +25°C

-130mA

Low Gate Threshold Voltage

-50V

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data

Applications



Case: SOT23



General Purpose Interfacing Switch

Power Management Functions

Analog Switch

Case Material: UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish (Lead Free Plating) Solderable per

MIL-STD-202, Method 208



Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)



Drain

SOT23

Gate

Source

Top View

Equivalent Circuit

Top View

Ordering Information (Note 4)

Part Number

BSS84-7-F

BSS84Q-7-F

BSS84-13-F

BSS84Q-13-F

Qualification

Case

Packaging

Commercial

Automotive

Commercial

Automotive

SOT23

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

K84

K84 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

K84

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Shanghai A/T Site

Chengdu A/T Site

Date Code Key

Year

1998

1999

2000

2001

2002

2003

2004

…

2011

2012

2013

2014

2015

2016

2017

Code

…

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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August 2013

BSS84

Document number: DS30149 Rev. 20 - 2

BSS84

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_DGR

V_GSS

I_D

Value

-50

Units

-50

Drain-Gate Voltage R_GS 20K

Gate-Source Voltage

Drain Current (Note 5)

Pulsed Drain Current

Continuous

20

-130

-1.2

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation (Note 5)

Symbol

Value

300

Units

C/W

C

P_D

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

417

R_

-55 to +150

T_J, T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Symbol

BV_DSS

I_DSS

Min

Typ

Max

Unit

Test Condition

V_GS= 0V, I_D= -250µA

-50



_DS= -50V, V_GS= 0V, T_J= +25°C

_DS= -50V, V_GS= 0V, T_J= +125°C







-1

-2

-100

µA

Zero Gate Voltage Drain Current

V_DS= -25V, V_GS= 0V, T_J= +25°C

V_GS= 20V, V_DS= 0V

Gate-Body Leakage

I_GSS



10

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.8



0.05

-2.0



V_GS(th)

R_{DS (ON)}

g_FS



V_DS= V_GS, I_D= -1mA

V_GS= -5V, I_D= -0.100A

V_DS= -25V, I_D= -0.1A

Static Drain-Source On-Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance



C_iss

C_oss

C_rss



Output Capacitance

V_DS= -25V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 7)

Turn-On Delay Time

t_D(ON)



_DD= -30V, I_D= -0.27A,

Turn-Off Delay Time

R_GEN= 50, V_GS= -10V

t_D(OFF)

Notes:

5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing

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BSS84

Document number: DS30149 Rev. 20 - 2

BSS84

400

350

-600

-500

300

250

200

150

100

-400

-300

-200

-100

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature

75 100

175

125 150

200

-1

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 2 Drain-Source Current vs. Drain-Source Voltage

-2

-3

-4

-5

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

T_A= 125°C

T_A= 25°C

-2

V_GS, GATE-SOURCE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

-3

-4

-5

-1

-2

V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 3 Drain-Current vs. Gate-Source Voltage

-3

-4

-5

-6

-1

-7

-8

25.0

20.0

= -10V

= -0.13A

15.0

10.0

5.0

0.0

-0.2

-0.4

I_D, DRAIN-CURRENT (A)

Fig. 6 On-Resistance vs. Drain-Current

-0.6

-1.0

0.0

-0.8

-25

-50

75 100 125 150

T_J, JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance vs. Junction Temperature

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August 2013

BSS84

Document number: DS30149 Rev. 20 - 2

BSS84

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT23

Dim

Min

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40



0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

0.45

0.085 0.18

0° 8°

0.61

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

2.9

0.8

0.9

2.0

1.35

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BSS84

Document number: DS30149 Rev. 20 - 2

BSS84

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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BSS84

Document number: DS30149 Rev. 20 - 2

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