BSS84-7 [DIODES]
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; P沟道增强型场效应晶体管
| 型号： | BSS84-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
Low On-Resistance
SOT-23
A
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
D
B
C
B
Low Input/Output Leakage
TOP VIEW
G
S
C
D
G
E
D
Mechanical Data
H
E
·
·
·
·
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K84
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
G
H
K
M
J
L
Drain
J
K
L
·
·
·
·
Gate
M
a
Source
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
VDGR
VGSS
ID
BSS84
-50
Units
V
Drain-Source Voltage
-50
V
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Continuous
Continuous
±20
V
mA
mW
°C/W
°C
Drain Current (Note 1)
-130
Pd
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
300
RqJA
417
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Symbol
BVDSS
IDSS
Min
Typ
Max Unit
Test Condition
VGS = 0V, ID = -250µA
-50
¾
¾
V
-15
-60
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
DS = -25V, VGS = 0V, TJ = 25°C
µA
µA
¾
¾
¾
¾
¾
¾
Zero Gate Voltage Drain Current
V
nA
-100
IGSS
Gate-Body Leakage
VGS = ±20V, VDS = 0V
¾
¾
±10
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VDS = VGS, ID = -1mA
VGS = -5V, ID = 0.100A
VDS = -25V, ID = 0.1A
VGS(th)
RDS (ON)
gFS
-0.8
¾
¾
¾
¾
-2.0
10
V
W
S
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
.05
¾
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
45
25
12
pF
pF
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
¾
¾
10
18
¾
¾
ns
ns
VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
tD(OFF)
Turn-Off Delay Time
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30149 Rev. 5 - 2
1 of 2
BSS84
www.diodes.com
(Note 3)
Ordering Information
Device
Packaging
Shipping
BSS84-7
SOT-23
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K84
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30149 Rev. 5 - 2
2 of 2
www.diodes.com
BSS84
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