DDTB122LC [DIODES]
PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR; PNP预偏置500毫安SOT- 23表面贴装晶体管
| 型号： | DDTB122LC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: DDTB122LC DDTB142JC DDTB122TC DDTB142TC
DDTB (LO-R1) C
PNP PRE-BIASED 500 mA SOT-23
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
SOT-23
Complementary NPN Types Available (DDTD)
Built-In Biasing Resistors
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
Lead Free/RoHS Compliant (Note 1)
B
TOP VIEW
B
C
C
Mechanical Data
·
D
Case: SOT-23
D
E
E
G
H
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
K
M
J
J
L
K
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
L
M
·
Marking: Date Code and Type Code (See Table Below &
Page 2)
a
All Dimensions in mm
·
·
Ordering Information (See Page 2)
Weight: 0.008 grams (approximate)
OUT
3
C
P/N
R1 (NOM) R2 (NOM) Type Code
R1
B
DDTB122LC
DDTB142JC
DDTB122TC
DDTB142TC
0.22KW
0.47KW
0.22KW
0.47KW
10KW
10KW
OPEN
OPEN
P75
P76
P77
P78
R2
E
1
2
GND(+)
IN
Schematic and Pin Configuration
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2)
-50
V
DDTB122LC
DDTB142JC
+5 to -6
+5 to -6
VIN
V
V
Input Voltage, (2) to (1)
DDTB122TC
DDTB142TC
VEBO (MAX)
-5
IC
Pd
Output Current
All
-500
200
mA
mW
°C/W
°C
Power Dissipation (Note 2)
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage and Temperature Range
625
-55 to +150
Note: 1. No purposefully added lead.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30403 Rev. 5 - 2
1 of 3
DDTB (LO-R1) C
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DDTB122LC
DDTB142JC
-0.3
-0.3
Vl(off)
VCC = -5V, IO = -100mA
¾
¾
V
Input Voltage
VO = -0.3V, IO = -20mA
DDTB122LC
DDTB142JC
-2.0
-2.0
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
O = -0.3V, IO = -20mA
IO/Il = -50mA/-2.5mA
Output Voltage
Input Current
-0.3V
DDTB122LC
DDTB142JC
-28
-13
VI = -5V
mA
mA
¾
VCC = -50V, VI = 0V
VO = -5V, IO = -50mA
IO(off)
Gl
Output Current
DC Current Gain
-0.5
DDTB122LC
DDTB142JC
56
56
¾
VCE = -10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
-50
-40
Typ
¾
Max Unit
Test Condition
IC = -50mA
IC = -1mA
IE = -50mA
¾
¾
V
V
¾
Emitter-Base Breakdown Voltage DDTB122TC
DDTB142TC
BVEBO
ICBO
¾
-5
¾
¾
¾
¾
V
mA
mA
V
I
E = -50mA
VCB = -50V
Collector Cutoff Current
¾
-0.5
DDTB122TC
Emitter Cutoff Current
¾
¾
-0.5
-0.5
V
EB = -4V
IEBO
DDTB142TC
IC = -50mA, IB = -2.5mA
IC = -5mA, VCE = -5V
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
¾
-0.3
DDTB122TC
DC Current Transfer Ratio
100
100
250
250
600
600
¾
DDTB142TC
VCE = -10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
(Note 3)
Ordering Information
Device
Packaging
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
DDTB122LC-7-F
DDTB142JC-7-F
DDTB122TC-7-F
DDTB142TC-7-F
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code, See Table on Page 1
YM = Date Code Marking
Y = Year ex: T = 2006
XXX
M = Month ex: 9 = September
Date Code Key
Year
2006
2009
2010
2011
2007
2008
2012
Code
T
W
X
Y
U
V
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30403 Rev. 5 - 2
2 of 3
www.diodes.com
DDTB (LO-R1) C
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
LIFE SUPPORT
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
DS30403 Rev. 5 - 2
3 of 3
DDTB (LO-R1) C
www.diodes.com
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