DDTD122LU [DIODES]

NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR; NPN预偏置500毫安SOT -323表面贴装晶体管
DDTD122LU
型号: DDTD122LU
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
NPN预偏置500毫安SOT -323表面贴装晶体管

晶体 晶体管
文件: 总3页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPICE MODELS: DDTD122LU DDTD142JU DDTD122TU DDTD142TU  
DDTD (LO-R1) U  
NPN PRE-BIASED 500 mA SOT-323  
SURFACE MOUNT TRANSISTOR  
Lead-free Green  
Features  
·
·
·
·
·
Epitaxial Planar Die Construction  
SOT-323  
A
Complementary PNP Types Available (DDTB)  
Built-In Biasing Resistors  
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device, Note 3 and 4  
C
B
B
C
D
0.65 Nominal  
G
H
Mechanical Data  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
·
Case: SOT-323  
G
H
K
J
·
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 4. UL Flammability Classification Rating  
94V-0  
M
J
L
D
E
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
K
0.90  
0.25  
0.10  
0°  
L
M
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
a
OUT  
All Dimensions in mm  
·
Marking: Date Code and Marking Code (See Diagrams &  
Page 2)  
3
C
·
·
Ordering Information (See Page 2)  
Weight: 0.006 grams (approximate)  
R1  
B
R2  
P/N  
R1 (NOM) R2 (NOM) MARKING  
E
DDTD122LU  
DDTD142JU  
DDTD122TU  
DDTD142TU  
0.22KW  
0.47KW  
0.22KW  
0.47KW  
10KW  
10KW  
OPEN  
OPEN  
N75  
N76  
N77  
N78  
1
2
GND(0)  
IN  
Schematic and Pin Configuration  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VCC  
Supply Voltage, (3) to (2)  
Input Voltage, (1) to (2)  
50  
V
DDTD122LU  
DDTD142JU  
-5 to +6  
-5 to +6  
VIN  
V
V
Input Voltage, (2) to (1)  
DDTD122TU  
DDTD142TU  
VEBO (MAX)  
5
IC  
Pd  
Output Current  
All  
500  
200  
mA  
mW  
°C/W  
°C  
Power Dissipation (Note 1)  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
625  
-55 to +150  
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30398 Rev. 5 - 2  
1 of 3  
DDTD (LO-R1) U  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
DDTD122LU  
DDTD142JU  
0.3  
0.3  
Vl(off)  
VCC = 5V, IO = 100mA  
¾
¾
V
Input Voltage  
VO = 0.3V, IO = 20mA  
2.0  
2.0  
DDTD122LU  
DDTD142JU  
Vl(on)  
VO(on)  
Il  
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
V
O = 0.3V, IO = 20mA  
IO/Il = 50mA/2.5mA  
Output Voltage  
Input Current  
0.3V  
DDTD122LU  
DDTD142JU  
28  
13  
VI = 5V  
mA  
mA  
¾
VCC = 50V, VI = 0V  
VO = 5V, IO = 50mA  
IO(off)  
Gl  
Output Current  
DC Current Gain  
0.5  
DDTD122LU  
DDTD142JU  
56  
56  
¾
VCE = 10V, IE = 5mA,  
f = 100MHz  
fT  
Gain-Bandwidth Product*  
¾
200  
¾
MHz  
* Transistor - For Reference Only  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
R1-Only, R2-Only Types  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Symbol  
BVCBO  
BVCEO  
Min  
50  
Typ  
¾
Max Unit  
Test Condition  
I
C = 50mA  
¾
¾
V
V
IC = 1mA  
40  
¾
Emitter-Base Breakdown Voltage DDTD122TU  
DDTD142TU  
IE = 50mA  
IE = 50mA  
BVEBO  
ICBO  
¾
5
¾
¾
¾
¾
V
mA  
mA  
V
VCB = 50V  
Collector Cutoff Current  
¾
0.5  
DDTD122TU  
Emitter Cutoff Current  
¾
¾
0.5  
0.5  
VEB = 4V  
IEBO  
DDTD142TU  
IC = 50mA, IB = 2.5mA  
IC = 5mA, VCE = 5V  
VCE(sat)  
hFE  
Collector-Emitter Saturation Voltage  
¾
0.3  
DDTD122TU  
DC Current Transfer Ratio  
100  
100  
250  
250  
600  
600  
¾
DDTD142TU  
VCE = 10V, IE = -5mA,  
f = 100MHz  
fT  
Gain-Bandwidth Product*  
¾
200  
¾
MHz  
* Transistor - For Reference Only  
(Note 4 & 5)  
Ordering Information  
Device  
Packaging  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
Shipping  
DDTD122LU-7-F  
DDTD142JU-7-F  
DDTD122TU-7-F  
DDTD142TU-7-F  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Notes: 4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
NXX = Product Type Marking Code  
See Sheet 1 Diagrams  
YM = Date Code Marking  
Y = Year ex: T = 2006  
NXX  
M = Month ex: 9 = September  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30398 Rev. 5 - 2  
2 of 3  
DDTD (LO-R1) U  
www.diodes.com  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Power Derating Curve  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.  
LIFE SUPPORT  
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe  
PresidentofDiodesIncorporated.  
DS30398 Rev. 5 - 2  
3 of 3  
DDTD (LO-R1) U  
www.diodes.com  

相关型号:

DDTD122LU-7

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122LU-7-F

NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTD122LU_1

NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTD122LU_2

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TC

NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TC-7

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122TC-7-F

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TU

NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TU-13

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122TU-7

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122TU-7-F

NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTD123EC

NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DIODES